• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.808-812
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• 2015

Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.126-130
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• 2008

In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

• Korean Journal of Medicinal Crop Science
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• v.1 no.2
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• pp.171-177
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• 1993

This experiment was conducted to select and rear the adaptable cultivar which isused for various purpose and to build a year-round cultivation using with characters of aerial part and analysis of chemical components in 28 local cultivar of Artemisia princeps Var. The growth of aerial part, which are stem length, stem diameter, no. of branch, node, leaf size and leaf pubescence, in north local cultivars was more vigorous than those of south local caltivars. Fresh weight of "Myeongcheonssuk " was highest in local caltivars, and in view of local area, local cultivars which was collected from Iri Si and Euiseong Gun was shown the highest fresh weight. Local cultivars as mentioned above had a characters with plenty of leaves, nodes and pubescence of leaf is long. In chemical components of leaves in morth cultivar, content of N, MgO, Zn, Cu, Mn was high, while $P_2O_5,\;K_2O$ in middle local cultivars, Fe in south local cultivars. The more content of carbohydrate in leaves was high, the content of $K_{2}O$ had a increasing tendency. In local cultivars which was collected form Iri Si and Euiseong Gun with the highest fresh weight, content of $N,\;P_{2}O_5,\;K_{2}O$ was high, on the other hand content of MgO, Zn, Ca, Mn, Fe, was low in leaves of Artemisia Princeps Var.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.789-793
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• 2018

All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.

• Macromolecular Research
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• v.11 no.6
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• pp.506-510
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• 2003

A Zn ion-coated nanosilica filler has been developed and tested, in chlorosulfonated polyethylene (CSPE) and polychloroprene (CR), as a vulcanizing activator, cum was reinforcing filler. In this study, ZnO was replaced by the Zn ion-coated nanosilica filler with an aim of studying the dual role of this nanofiller in CSPE and CR. In the case of CSPE vulcanizates, the presence of MgO deteriorated the state and rate of cure when the Zn ion-coated nanosilica filler was used, but in the case of CR it improved the state of cure and enhanced the modulus and tensile strength. The Zn ion-coated filler proved to be a better reinforcing-cum-curing agent than was externally added ZnO and NA-22 also proved to be a better curative in the presence of the Zn ion-coated nanosilica filler for both CSPE and CR.

• Asian-Australasian Journal of Animal Sciences
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• v.22 no.9
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• pp.1279-1287
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• 2009

Concentrated livestock production has led to soil nutrient accumulation concerns. To reduce the environmental impact, it is necessary to understand current recommended livestock feeding practices. Two experiments were conducted to compare the effects of trace mineral supplementation on performance, carcass composition, and fecal mineral excretion of phase-fed, grow-finish pigs. Crossbred pigs (Experiment 1 (Exp. 1), (n = 528); Experiment 2 (Exp. 2), (n = 560)) were housed in totally-slatted, confinement barns, blocked by weight, penned by sex, and randomly assigned to pens at approximately 18 kg BW. Treatments were allocated in a randomized complete block design (12 replicate pens per treatment) with 9 to 12 pigs per pen throughout the grow-finish period. In Exp. 1, the control diet (Io100) contained Cu as $CuSO_{4}$, Fe as $FeSO_{4}$, and Zn (of which 25% was ZnO and 75% was $ZnO_{4}$) at concentrations of 63 and 378 mg/kg, respectively. Treatment 2 (O100) contained supplemental Cu, Fe, and Zn from organic sources (Bioplex, Alltech Inc., Nicholasville, KY) at concentrations of 19, 131, and 91 mg/kg, respectively, which are the commercially recommended dietary inclusion levels for these organic trace minerals. Organic Cu, Fe, and Zn concentrations from O100 were reduced by 25% and 50% to form treatments 3 (O75) and 4 (O50-1), respectively. In Exp. 2, treatment 5 (Io25) contained 25% of the Cu, Fe, and Zn (inorganic sources) concentrations found in Io100. Treatment 6 (O50-2) was identical to the O50-1 diet from Exp. 1. Treatment 7 (O25) contained the experimental microminerals reduced by 75% from concentrations found in O100. Treatment 8 (O0) contained no trace mineral supplementation and served as a negative control for Exp. 2. In Exp. 1, tenth-rib backfat, loin muscle area and ADG did not differ (p>0.05) between treatments. Pigs fed the control diet (Io100) consumed less feed (p<0.01) compared to pigs fed diets containing organic trace minerals, thus, G:F was greater (p = 0.03). In Exp. 2, there were no differences among treatment means for loin muscle area, but pigs fed the reduced organic trace mineral diets consumed less (p<0.05) feed and tended (p = 0.10) to have less tenth-rib backfat compared to pigs fed the reduced inorganic trace mineral diet. Considering that performance and feed intake of pigs was not affected by lower dietary trace mineral inclusion, mineral excretion could be reduced during the grow-finish phase by reducing dietary trace mineral concentration.