• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Bulletin of the Korean Chemical Society
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• 제28권11호
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• pp.2056-2060
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• 2007

A successful combination of “oxygen-assisted chemical vapor deposition (CVD) process” and Co catalyst nanoparticles to grow highly pure single walled carbon nanotubes (SWNTs) was demonstrated. Recently, it was reported that addition of small amounts of oxygen during CVD process dramatically increased the purity and yield of carbon nanotubes. However, this strategy could not be applied for discrete Fe nanoparticle catalysts from which appropriate yields of SWNTs could be grown directly on solid substrates, and fabricated into field effect transistors (FETs) quite efficiently. The main reason for this failure is due to the carbothermal reduction which results in SiO2 nanotrench formation. We found that the oxygen-assisted CVD process could be successfully applied for the growth of highly pure SWNTs by switching the catalyst from Fe to Co nanoparticles. The topological morphologies and p-type transistor electrical transport properties of the grown SWNTs were examined by using atomic force microscope (AFM), Raman, and from FET devices fabricated by photolithography.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.383-387
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• 2002

N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.420-420
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• 2007

ZnO 나노막대는 산화물 반도체로서 넓은 밴드캡 (3.37eV)을 가진 반도체이며, 테라급의 전계 효과 트랜지스터(FET), 대기오염물질 모니터링 센서, 태앙전지용 전극, UV 발광소자, 전계방출 디스플레이의 팀 등 나노기술 전반에 활용해 최근 각광을 받고 있는 물질이다. 최근 디바이스 응용의 효율을 높이기 위한 방편으로 나노막대에서 박막으로의 연구가 활발하다. 본 실험은 MOCVD률 이용하여 p-si 기판위에 나노막대를 성장시킨 후 압력 및 온도 등의 공정변수를 조절하여 나노막대에서 박막으로 성장형태를 변화시켰다. SEM으로 1 차원 나노막대에서 2차원의 나노박막으로 성장이 된 ZnO 하이브리드 구조를 확인할 수 있었다. 또, PL장비를 이용해 ZnO의 UV영역의 파장을 확인할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1339-1340
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• 2007

본 연구에서는 이종 차원 나노선과 나노입자의 결합에 따른 단일 나노선 소자의 전기적 특성 및 메모리 효과를 연구하였다. 열증착법으로 성장 된 p 형 Si 나노선에 Atomic Layer Deposition (ALD) 방법으로 10nm의 $Al_{2}O_{3}$를 증착한 후 Low Precensure - Chemical Vapor Deposition (LP-CVD)를 이용하여 Polycrystalline Sicon(Poly-Si)을 Si 나노선 위에 5nm 증착하고 습식 에칭법을 이용하여 poly Si 내의 $SiO_x$를 제거하여 Si 나노입자를 Si 나노선 위에 형성시켰다. 그 후 포토리소그래피 공정을 이용하여 Top gate 형태의 나노선-나노입자 이종결합 Field-Effect Transistor (FET) 소자를 제작하여 게이트 전압에 따른 드레인 전류-전압($I_{DS}-V_{DS}$)의 변화를 측정하여 나노선의 전기 소자로서의 특성을 확인하고, 게이트 전압을 양방향으로 swing 하면서 인가하여 $I_{DS}$ 전류 특성이 변화하는 것을 통해 메모리 효과를 조사하였다. 또한 나노입자의 결합이 게이트 전압의 인가 시간에 따라 드레인 전류에 영향을 미치는 것을 확인하여 메모리 소자로서의 가능성을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• KSBB Journal
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• 제22권6호
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• pp.409-413
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• 2007

양친성의 성질을 가진 폴리디아세틸렌 단량체를 이용한 센서는 주로 수용액 상태에서 리포좀이나 또는 다른 구조를 이용하였다. 폴리디아세틸렌은 수용액 상에서 쉽게 구조를 형성하는 장점과 여러 광학적인 특성을 가지고 있어서 다양한 목적물질의 검출을 가능하게 하였다. 디아세틸렌 단량체는 수 nm의 크기의 분자로서 LB 필름 제조 방법을 이용하면 아주 얇은 단분자층 또는 다분자층으로 필름을 형성할 수 있게 된다. 이렇게 형성된 필름은 수용액상에서 만들어진 구조체와 같은 성질을 가진다. 즉 무색으로 형성된 구조체들은 254 nm에 조사를 시키면 파란색으로 변하게 되며 650 nm 부근에서 최대 흡수 파장을 가지게 된다. 파란색으로 형성된 구조체는 다양한 외부환경 (온도, pH, 용매 등)이나 목적물질 (바이러스, 단백질, 항체, DNA, 펩타이드 등)의 결합으로 약하게는 보라색에서 강하게는 붉은색으로 변하게 된다. 색전이가 이루어진 수용액이나 필름에서는 파란색에서는 존재하지 않던 형광이 630 nm 부근에서 최대 방출 파장이 나타나기도 한다. 따라서 가시적인 방법이나 형광 검출 방법을 이용하면 색이 변한 정도에 따라 특이성의 정도를 결정할 수 있는 좋은 센서 기술이 될 것으로 사료된다. 목적 물질 검출에 대한 연구 이외에 대부분의 폴리디아세틸렌은 색전이가 이루어진 후 가역적인 현상을 보이지 않는다. 그러나 적절하게 치환된 관능기는 가역적인 성질을 부여하게 된다. 이런 성질들을 내포하면서 막대 모양과 같은 견고한 실리카 구조체의 형성에 적용할 수 있다는 연구 결과가 보고되고 있다. 그러나 구조체를 형성하는 단량체는 비특이적인 결합을 할 수 있는 관능기 (-COOH, $-NH_2$ 등)을 포함하고 있기 때문에 선택적인 센서의 개발을 위해서는 개선해야 할 부분이다. 결론적으로 보완된 다양한 구조체와 센서 적용 기술은 현재의 표지방식을 기반으로 하는 감지 기술을 대체할 수 있는 새로운 비표지 센서로의 적용이 가능할 것으로 여겨진다.

• Journal of Microbiology and Biotechnology
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• 제18권8호
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• pp.1368-1376
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• 2008

In our previous study, the expression of active H-ferritins in Saccharomyces cerevisiae was found to reduce cell growth and reactive oxygen species (ROS) generation upon exposure to oxidative stress; such expression enhanced that of high-affinity iron transport genes (FET3 and FTR1). The results suggested that the recombinant cells expressing H-ferritins induced cytosolic iron depletion. The present study analyzes metabolic changes under these circumstances via proteomic methods. The YGH2 yeast strain expressing A-ferritin, the YGH2-KG (E62K and H65G) mutant strain, and the YGT control strain were used. Comparative proteomic analysis showed that the synthesis of 34 proteins was at least stimulated in YGH2, whereas the other 37 proteins were repressed. Among these, the 31 major protein spots were analyzed via nano-LC/MS/MS. The increased proteins included major heat-shock proteins and proteins related to endoplasmic reticulum-associated degradation (ERAD). On the other hand, the proteins involved with folate metabolism, purine and methionine biosynthesis, and translation were reduced. In addition, we analyzed the insoluble protein fractions and identified the fragments of Idh1p and Pgk1p, as well as several ribosomal assembly-related proteins. This suggests that intracellular iron depletion induces imperfect translation of proteins. Although the proteins identified above result from changes in iron metabolism (i.e., iron deficiency), definitive evidence for iron-related proteins remains insufficient. Nevertheless, this study is the first to present a molecular model for iron deficiency, and the results may provide valuable information on the regulatory network of iron metabolism.