• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.80-80
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• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.220-226
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• 2000

The piezoelectric material for piezoelectric transformer needs the high electromechanical coupling factor( $k_{p}$) the piezoelectric constant( $d_{33}$) and the mechanical quality factor( $Q_{m}$)in order to obtain high voltage step-up ratio and low temperature rising. In this study the piezoelectric transformers were fabricated using Pb［$Zr_{0.45}$/ $Ti_{0}$48//L $u_{0.02}$(M $n_{1}$3//S $b_{2}$3/)$_{0.05}$］ $O_3$(PMS-PZT) and Pb［Z $r_{0.25}$/ $Ti_{0.375}$(M $g_{1}$3//N $b_{2}$3/)$_{0.375}$］ $O_3$+0.5wt%Mn $O_2$(PMN-PZT) ceramics. The piezoelectric properties of PMS-PZT and PMN-PZT were measured. The voltage set-up ratios of the piezoelectric transformers using PMS-PZT and PMN-PZT were the value of 15, 20 respectively under 100$_{KΩ}$ in Rosen type transformer.r.ormer.r.r.r.r.r.r.

• 마이크로전자및패키징학회지
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• 제7권4호
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• pp.1-5
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• 2000

열전반도체 ($Pb_{1-x}Sn_{x}$)Te를 AC통전 가압법으로 제조하여 그물성에 대해서 연구하였다. 균질성 향상과 구성 성분의 휘발방지에 유효한 진동분쇄공정으로 기계적 합금화를 시켰다. Sn 함량이 증가함에 따라 합금화에 요구되는 기계적 합금화 시간이 증가되었다. AC 통전 hot press법으로 873-923 K에서 1~4분간 150 kgf/$\textrm{cm}^2$의 압력으로 소결하였다. 단시간의 소결은 Te의 증발을 억제할 수 있었다. ($Pb_{1-x}-Sn_{x}$)Te 밀도는 소결 시간보다 소결온도에 더 영향을 받았다. Sn첨가량이 10 mol% 이하일때 온도 상승에 따라 p-n전이 현상이 일어났으나 그 이상의 함량에서는 p-type반도성이 그대로 유지됨이 관찰되었다. 열기전력은 500 K, x=0.2일때 250 $\mu$V/K의 최대치론 나타내었다. Sn함량의 증가에 따라 최대치는 낮아졌으며, 그 온도는 고온측으로 이동하였으며, 전기전도도의 최대치는 온도가 상승함에 따라 저하되었다.

• 한국전자통신학회논문지
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• 제9권5호
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• pp.555-560
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• 2014

본 논문에서 850nm~1000nm 파장대역에서 레이저를 검출하기 위한 고감도 실리콘 포토다이오드를 제조하고 전기적 및 광학적 특성을 분석하였다. 소자의 크기는 $5000{\mu}m{\times}2000{\mu}m$이며 두께는 $280{\mu}m$로 제조하여 TO-5 형태로 패키징 하였다. 전기적 특성으로 암전류는 5V 역 전압 일 때 0.1nA의 값을 나타내었으며 정전용량은 0V일 때 1kHz 주파수 대역에서 32.5pF와 200kHz 주파수 대역에서 32.4pF로 적은 정전용량의 값을 나타내었다. 또한 출력신호의 상승시간은 10V의 전압일 때 20.92ns로 고속 응답특성을 확인하였다. 광학적 특성으로는 890nm에서 최대 0.57A/W의 분광감응도를 나타내었고 1000nm에서는 0.37A/W로 감소한 분광감응도를 나타내고 있지만 870nm~920nm 파장대역에서는 비교적 우수한 분광감응도를 나타내었다.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.121-125
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• 2011

Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${\mu}m$ and a resistivity of 3 $\Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${\mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.504-507
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• 1987

Interpenerating Polymer Networks (IPNs) are unique type of polymer blend, synthesized by swelling a crossed polymer (Epoxy) with second polymer (Silicon) and also we adopted Urethane as the second polymer. The relationship between dielectric and mechanical properties of high temperature curing IPNs(E/S, E/U) are investigated. The ratios of weight that we formed we re two kind of thing, one (E/S) about 1[wt%]. 3[wt%], 5[wt%], 7[wt%], 10[wt%], and the other (E/U) about 5[wt%], 15[wt%], 25[wt%]. It was heat-cured for 24hours at $100^{\circ}C$ 48 hours at $10^{\circ}C$, 5 hours at $130^{\circ}C$, 15hours at $130^{\circ}C$ in E/S and also for 5 hours at $130^{\circ}C$ in E/U. From the viewpoint of dielectric and mechanical properties, the optimum condition is obtained from the sample cured for 5hours at $130^{\circ}C$ for 1[wt%] in the E/S, and also obtained from the sample cure d for 5 hours at $130^{\circ}C$ in E/U.

• 한국세라믹학회지
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• 제55권1호
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• pp.1-20
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• 2018

Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.41-46
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• 2013

Efficient and inexpensive solar cells are necessary for photo-voltaic to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimized using a surface passivation technique suitable for manufacturing. Recently it has been shown that aluminum oxide thin films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells to attract positive-charged holes. Especially aluminum oxide thin film is a quite suitable passivation on the rear side of p-type silicon solar cells. This paper, it demonstrate the interfacial microstructure and electrical properties of mono-crystalline silicon surface passivated by $Al_2O_3$ films during firing process as applied for screen-printed solar cells. The first task is a comparison of the interfacial microstructure and chemical bonds of PECVD $Al_2O_3$ and of PEALD $Al_2O_3$ films for the surface passivation of silicon. The second is to study electrical properties of double-stacked layers of PEALD $Al_2O_3$/PECVD SiN films after firing process in the temperature range of $650{\sim}950^{\circ}C$.