• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.195-195
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• 2012

Recently, graphene based solution-gated field-effect transistors (SGFETs) have been received a great attention in biochemical sensing applications. Graphene and reduced graphene oxide (RGO) possess various advantages such as high sensitivity, low detection limit, label-free electrical detection, and ease of fabrication due to their 2D nature and large sensing area compared to 1D nanomaterials- based nanobiosensors. Therefore, graphene or RGO -based SGFET is a good potential candidate for sensitive detection of protons (H+ ions) which can be applied as the transducer in various enzymatic or cell-based biosensing applications. However, reports on detection of H+ ions using graphene or RGO based SGFETs have been still limited. According to recent reports, clean graphene grown by CVD or exfoliation is electrochemically insensitive to changes of H+ concentration in solution because its surface does not have terminal functional groups that can sense the chemical potential change induced by varying surface charges of H+ on CVD graphene surface. In this work, we used RGO -SGFETs having oxygen-containing functional groups such as hydroxyl (OH) groups that effectively interact with H+ ions for expectation of increasing pH sensitivity. Additionally, we also investigate RGO based SGFETs for bio-sensing applications. Hydroloytic enzymes were introduced for sensing of biomolecular interaction on the surface of RGO -SGFET in which enzyme and substrate are acetylcholinesterase (AchE) and acetylcholine (Ach), respectively. The increase in H+ generated through enzymatic reaction of hydrolysis of Ach by AchE immobilized on RGO channel in SGFET could be monitored by the change in the drain-source current (Ids).

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.427-431
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• 2009

ZnO wire-like thin films were synthesized through thermal oxidation of sputtered Zn metal films in dry air. Their nanostructure was confirmed by SEM, revealing a wire-like structure with a width of less than 100 nm and a length of several microns. The gas sensors using ZnO wire-like films were found to exhibit excellent $H_2$ gas sensing properties. In particular, the observed high sensitivity and fast response to $H_2$ gas at a comparatively low temperature of $200^{\circ}C$ would lead to a reduction in the optimal operating temperature of ZnO-based $H_2$ gas sensors. These features, together with the simple synthesis process, demonstrate that ZnO wire-like films are promising for fabrication of low-cost and high-performance $H_2$ gas sensors operable at low temperatures. The relationship between the sensor sensitivity and $H_2$ gas concentration suggests that the adsorbed oxygen species at the surface is $O^-$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.293-297
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• 2009

This paper describes a real-time reliable measurement and analysis system for ubiquitous healthcare based on IEEE802.15.4 standard. In order to obtain and monitor physiological body signals continuously, wearable pulse oximeter is designed in wrist that could used to measure oxygen saturation of a patient unobtrusively. The measured data was transferred to a central PC or server by using wireless sensor nodes via a wireless sensor network for storage and analysis purposes. LabVIEW server program was designed to monitor and process the measured photoplethysmogram(PPG) to accelerated plethysmogram(APG) by appling second order derivatives in server PC. These experimental results demonstrate that APG can precisely describe the features of an individual's PPG and be used as estimation of vascular elasticity for blood circulation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.5
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• pp.743-754
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• 2022

This paper contains the results of the development and performance evaluation of the environmental data monitoring system for the fish farm. For the hardware development, the analogue sensor is used to collect dissolved oxygen, pH, salinity, and temperature of the fish farm water, and the digital sensor is used for collecting ambient temperature, humidity, and location information via a GPS module to be sent to cloud-based Firebase DB. A set of LoRa transmitters and receivers is used as a communication module to upload the collected data. The data stored in Firebase is retrieved as a graph on a web and mobile application to monitor the environmental data changes in real-time. A notification will be delivered if the collected data is outside the determined optimal value. To evaluate the performance of the developed system, a response time from hardware modules to web and mobile applications is ranging from 6.2 to 6.85 seconds, which indicates satisfactory results.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.101-108
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• 1996

The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at $800{\sim}1010^{\circ}C$ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at $1010^{\circ}C$ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon $p^{+}-n$ junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at $1010^{\circ}C$ for one hour) was secondly annealed in an oxygen ambient at $800^{\circ}C$ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.231-234
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• 2001

OBD-II regulations are already effective in many countries. The California Air Resources Board(CARB) first issued regulations in 1985 for the 1988 model year, known as OBD-I, and required the vehicle's engine management computer to warn the driver by means of a dash-mounted light if a malfunction occurred in either the oxygen sensor, the exhaust gas recirculation(EGR) valve or the evaporative emission system purge solenoid, and to store information on troubles that have no recurrent characteristics. This paper presents two methods of wireless monitoring OBD signal, which is one of the ECU output for self diagnostic measurement. RF module is used to monitor ECU's Self diagnostic signal remotely. Two kinds of measurement systems which are based on micro-controller(80C196KC) for portable detection and PC for sever are considered for receiving the RF signal. Therefore, possibility of real-time monitoring of ECU's self diagnostic signal remotely is verified on this paper.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.11
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• pp.2119-2125
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• 1992

An air-fuel ratio control method is studied to keep the air-fuel ratio of the exhaust gas in the neighborhood of the stoichiometric air-fuel ratio to maximize the conversion efficiency of the three-way catalytic converter. Estimators, which estimate the air-fuel ratio of the exhaust gas, are proposed using neural networks to overcome the limit of the presently used bang-bang type exhaust gas oxygen sensor. Using these estimators, PI controller for air-fuel ratio control is designed and is experimented for an automobile engine. The proposed controller reduces the variation of air-fuel ratio of the exhaust gas from the stoichiometric air-fuel ratio by 50%-75% when compared to the existing controller.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.182-182
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• 2014

Multiferroic materials have attracted much attention due to their own fascinating fundamental physical properties and potential technological applications to magnetic/ferroelectric data storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3$, in particular, has received considerable attention because the enhanced ferromagnetism was found by the Fe-site ion substitution with magnetic ions. The structural, the magnetic and the ferroelectric properties of polycrystalline $BiFe_{1-x}Ni_xO_3$ (x=0, 0.01, 0.02, 0.03 and 0.05), which were prepared by the solid-state reaction and the rapid-sintering method, have been investigated. The x-ray diffraction patterns reveal that all the samples are in single phase and show rhombohedral structure with R3c space group. The magnetic properties are enhanced according to the doping content. The Ni-doped $BiFeO_3$ samples exhibit lossy P-E loop due to the oxygen vacancy. The leakage current density of Ni-doped samples (x=0.01 and 0.02) is increased by four orders of magnitude. On the other hand, the x=0.03 and 0.05 samples show the relative reduction of the leakage current.