• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.57-63
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• 2016

We developed a flexible and micro-thick electromagnetic interference (EMI) shielding nanofabric layer that also functions as a water resisting and heat sinking material. Electrospinning followed by a simple heat treatment process was carried on to produce the EMI-shielding Ni/C hybrid nanofibers. The ambient oxygen partial pressure ($pO_2$ = 0.1, 0.7, 1.3 Torr) applied during the heat treatment was varied in order to optimize the effectiveness of EMI-shielding by modifying the size and crystallinity of the magnetic Ni nanoparticles distributed throughout the C nanofibers. Permittivity and permeability of the nanofibers under the electromagnetic (EM) wave frequency range of 300 MHz~1 GHz were measured, which implied the EMI-shielding effectiveness (SE) optimization at $pO_2$ = 0.7 Torr during the heat treatment. The materials' heat diffusivity for both in-plane direction and vertical direction was measured to confirm the anisotropic thermal diffusivity that can effectively deliver and sink the local heat produced during device operations. Also, the nanofibers were aged at room temperature in oxygen ambient for water resisting function.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.885-888
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• 2000

The effects of deposition temperature and post annealing process of ferroelectric PbZr$\sub$0.52/Ti$\sub$0.48/O$_3$(PZT) thin films by pulsed laser deposition (PLD) were investigated. The PZT thin films were deposited at 400, 450, 500, and 550$^{\circ}C$, with/without post annealing at 650$^{\circ}C$ for 30 min. The PZT thin films deposited above 500$^{\circ}C$ without post annealing were crystallized into peroveskite phase, but the PZT thin films deposited below 450$^{\circ}C$ had pyrochlore phase. The PZT thin films deposited below 450$^{\circ}C$ with post annealing also crystallized into pure perovskite. Compared to the PZT thin films which were deposited at 450$^{\circ}C$ and post annealed, the films deposited at 550$^{\circ}C$ have a columnar microstructure and high remnant polarization 28 (${\mu}$C/cm$^2$). With in-situ annealing at oxygen ambient, the PZT thin films reduced oxygen vacancies and increased retained polarization.

• Bulletin of the Korean Chemical Society
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• v.18 no.1
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• pp.56-61
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• 1997

Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.301-304
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• 2014

The effect of oxygen pressure on the synthesis of ZnO nanowires by means of melt-oxidation of an Al-Zn mixture was investigated. The samples were prepared in oxygen ambient for 1 h at $1,000^{\circ}C$ under oxygen pressure ranging from 0.5 to 100 Torr. ZnO nanowires were formed at oxygen pressures lower than 10 Torr. As the oxygen pressure increased from 0.5 to 10 Torr, the width of the nanowires increased, but their length decreased. The ZnO nanowires had a needle shape, which became gradually thinner toward the tip. X-ray diffraction patterns showed that the nanowires had a hexagonal wurtzite structure. However, ZnO nanowires were not observed when the oxygen pressure increased from 10 Torr to 100 Torr. In roomtemperature cathodeluminescence spectra of the ZnO nanowires, the intensity of ultra-violet emission at 380 nm increased with decreasing oxygen pressure, which indicated that the lower the oxygen pressure, the better the crystallinity of the ZnO nanowires.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.441-448
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• 2002

The electrical properties of the GaN-based green light emitting diodes(LEDs) with the Mg-doped p-GaN layer activated in $N_2$ or $O_2$ ambient have been compared. For the $N_2$ -ambient activation the current-voltage behavior of LEDs has been found to be improved when the Mg dopants activation was performed in the higher temperature. However, for the $O_2$-ambient activation the current-voltage characteristic has been observed to be enhanced when the Mg dopants activation was carried out in the lower temperature. The minimum forward voltage at 20mA was obtained to be 4.8 V for LEDs with the p-GaN layer activated at $900^{\circ}C$ in the $N_2$ ambient and 4.5V for LEDs with the p-GaN layer treated at $700^{\circ}C$ in the $O_2$ambient, repectively. The forward voltage reduction of the LEDs treated in the $O_2$-ambient may be related to the oxygen co-doping of the p-GaN layer during the activation process. The $O_2$ -ambient activation process is useful for the enhancement of the LED performance as well as the fabrication process since this process can activate the Mg dopants in the low temperature.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.101-108
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• 1996

The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at $800{\sim}1010^{\circ}C$ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at $1010^{\circ}C$ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon $p^{+}-n$ junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at $1010^{\circ}C$ for one hour) was secondly annealed in an oxygen ambient at $800^{\circ}C$ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.137-141
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• 1996

Ambient air aged anodically etched porous silicon (PS) and spark-processed silicon (sp-Si) show interesting similarities and dissimilarities in some of their luminescence-related properties. Among these similarties are: (1) the photoluminescence (PL) peak maximum in the blue/violet (410 nm);(2) the blue/violet PL peak positions are essentially unchanged with temperature ; (3) PL decay times in the nanosecond region which are independent of the detection wavelength, which is much faster in decay times compared to that of observed decay time in $SiO_2$.Among the dissimilarities are: (1) the PL intensity of blue/violet luminescence, namely, the PL intensity of sp-Si is at least 2 orders of magnitude larger than that of an ambient air aged PS; (2) the blue/violet PL intensity of sp-Si is more stable than that of ambient air aged PS under UV illuminations; (3) FTIR spectra of sp-Si favor those modes, which involve silicon -oxygen bonds in $SiO_2$ stoichiometry, whereas ambient air aged PS can be considered as a nonstoichiometric oxide judging from the observed vibrational spectra.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.648-652
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• 2014

We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1459-1466
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• 1994

A novel technique for determining the oxygen tracer diffusion coefficients in oxides was developed. After the 16O-18O solid-gas exchange reactions between 16O in the oxides and 18O in the ambient gas, Raman spectra of the cross sections of oxide samples were measured in a spatial resolution of 5 ${\mu}{\textrm}{m}$. From thus obtained Raman spectra, depth profiles of 18O concentration in the oxide samples were calculated. The oxygen tracer diffusion coefficients and the surface exchange coefficients were determined under the assumptions that samples are semi-infinite slab and that the surface exchange reactionsare not negligible. The oxygen tracer diffusion coefficient of 2.8 mol% Y2O3-containing tetragonal ZrO2 polycrystals, 8 mol% Y2O3-containing ZrO2 polycrystals, and 10 mol% Y2O3-containing cubic ZrO2 single crystals (along the a axis) are as follows.