• Journal of the Architectural Institute of Korea Structure & Construction
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• v.34 no.3
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• pp.37-42
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• 2018

The use of fly ash in construction materials is increasing worldwide due the various advantages of using it, such as to produce durable concrete, or to use less cement and thus lower carbon dioxide emissions. The quality of fly ash is often determined by loss on ignition value (LOI), where an upper limit of LOI is set in each country for quality control purpose. However, due to many reasons, production of high LOI fly ash is increasing that cannot be utilized in concrete, ending up in landfill. In this study, the effect of fly ash use in cementitious materials on nitrogen oxides adsorption is examined. In particular, the effect of using high LOI, and thus high carbon content fly ash on nitrogen oxides adsorption is investigated. The results suggest that the higher carbon content fly ash is related to higher nitrogen dioxide adsorption, although normal fly ash was also more effective in nitrogen dioxide adsorption than ordinary portland cement. Also, higher replacement rate of up to 40% of fly ash is beneficial for nitrogen dioxide adsorption. These results demonstrate that high carbon fly ash can be used as construction materials in an environmentally friendly way where strength requirement is low and where nitrogen oxides emissions are high.

• Korean Journal of Metals and Materials
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• v.49 no.6
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• pp.425-439
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• 2011

A review of the development history of interatomic potential models for ionic materials was carried out paying attention to the way of future development of an interatomic potential model that can cover ionic, covalent and metallic bonding materials simultaneously. Earlier pair potential models based on fixed point charges with and without considering the electronic polarization effect were found to satisfactorily describe the fundamental physical properties of crystalline oxides (Ti oxides, $SiO_2$, for example) and their polymorphs, However, pair potential models are limited in dealing with pure elements such as Ti or Si. Another limitation of the fixed point charge model is that it cannot describe the charge variation on individual atoms depending on the local atomic environment. Those limitations lead to the development of many-body potential models(EAM or Tersoff), a charge equilibration (Qeq) model, and a combination of a many-body potential model and the Qeq model. EAM+Qeq can be applied to metal oxides, while Tersoff+Qeq can be applied to Si oxides. As a means to describe reactions between Si oxides and metallic elements, the combination of 2NN MEAM that can describe both covalent and metallic elements and the Qeq model is proposed.

• Journal of Sensor Science and Technology
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• v.22 no.1
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• pp.1-17
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• 2013

Metal oxides designed for application in conductometric gas sensors and approaches used for synthesis of metal oxides with improved gas sensing characteristics are discussed in present article.

• Bulletin of the Korean Chemical Society
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• v.20 no.1
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• pp.49-52
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• 1999

Various metal oxides such as Fe2O3, FeO, TiO2, MnO2, MoO3, WO3 and ZnO have been used as a catalyst for Gif-KRICT type cyclohexane oxidation. In this reaction, the conversion of cyclohexane to cyclohexanone and cyclohexanol and the selectivity ratio of cyclohexanone to cyclohexanol were greatly affected by the acidity of metal oxides. When metal oxide has more acidic property, the reactivity on oxidation is increased and the formation of cyclohexanone is more favored. From this result, we proposed a new mechanism for the biomimetic Gif-KRICT oxidation system.

• Journal of the Korean Ceramic Society
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• v.15 no.2
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• pp.72-78
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• 1978

The vapor pressure of the high melting point oxides, MgO, $Cr_2O_3$, and $MgCr_2O_4$ were measured over the temperature range 1300 to 175$0^{\circ}C$ under vacuum <$10^{-5}$ torr by the Langmuir and the Knudsen method. The Langmuir vapor pressure was increased with elevating temperature and with increasing porosity of the specimen. The difference between the vapor preseures measured by the Langmuir and the Knudsen method was decreased with elevating temperature and the Langmuir vapor pressure finally reached the Knudsen vapor pressure at the melting point when extrapolated. The vapor pressure of other important oxides with high melting points, i.e., $Al_2O_3$, $ThO_2$, $Yb_2O_3$ and $Y_2O_3$ were cited from the references. The Langmuir and the Knudsen vapor pressure of these oxides also showed the same results, i.e., they showed the same value at their melting points.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.113-117
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• 2003

To reduce the doming of the shadow mask due to thermal expansion and to prevent the color discrepancy, the electron reflecting layer with lead tungsten oxides on the electron gun side of shadow mask was formed by screen printing method and doming property was evaluated in CRT. First, the lead tungsten oxides were prepared by calcining the mixture of lead oxide and tungsten oxide above 600$^{\circ}C$. Second, the paste which has the anti-doming composition including the lead tungsten oxides was coated by screen-printing method. As a result, the doming of the shadow mask was reduced about from 30 to 45%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.595-600
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• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.1
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• pp.35-41
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• 2011

Temperature programmed reduction experiments for Fe- and Co-oxides were performed and weight losses were carefully measured to calculate the extent of reduction. Addition of nickel and palladium affected the reduction by lowering the DTG peak temperature. Reduction experiments for the oxides on alumina were also studied and the effect of nickel and palladium addition was confirmed. And that was explained by means of increased adsorption of hydrogen and increased diffusion ability of the surface hydrogen.

• Proceedings of the Safety Management and Science Conference
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• 2013.11a
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• pp.547-560
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• 2013

In this study, the air pollutant removal such as sulfur oxides was studied. A combination of the plasma discharge in the reactor by the reaction surface discharge reactor Calcium hydroxides catalytic reactor and air pollutants, hazardous gas SOx, changes in gas concentration, change in frequency, the thickness of the electrode, kinds of electrodes and the addition of simulated composite catalyst composed of a variety of gases, including decomposition experiments were performed by varying the process parameters. The experimental results showed the removal efficiency of 98% in the decomposition of sulfur oxides removal experiment when Calcium hydroxides catalysts and the tungsten(W) electrodes were used. It was increased 3% more than if you do not have the catalytic. If added to methane gas was added the removal efficiency increased decomposition.