• Transactions on Electrical and Electronic Materials
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• 제10권6호
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• pp.200-202
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• 2009

Tin oxide thin films were prepared by atomic layer deposition using a tetrakis(ethylmethylamino) tin precursor without any seed layer. The average growth rate of tin oxide film is about 1.2 A/cycle from $50{^{\circ}C}$ to $150{^{\circ}C}$. The rate decreases rapidly at a substrate temperature of $200{^{\circ}C}$. ALD-grown tin oxide thin film was characterized with the use of XRD, AFM and XPS. Due to a thermal annealing effect, the surface roughness and the tin amount in the film composition are slightly increased.

• 한국진공학회지
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• 제12권S1호
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• pp.49-51
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• 2003

Amorphous hydrous ruthenium oxide thin films have attracted much interest owing to the possibility of using this material in electrochemical supercapacitors. Recently, it was found that this material is also electrochromic: during the charging/discharging cycle, the optical transmittance of the thin film is modulated. The physical and chemical origin of this phenomenon is not fully understood yet. In this work, we performed in-situ Raman spectroscopy measurements on amorphous hydrous ruthenium oxide thin films during the charging/discharging cycles. Unambiguous changes in the Raman spectrum were observed as protons were injected or extracted from the thin film. When the samples were annealed to reduce the water content, there is a consistent trend in the Raman spectrum. The origins of the Raman features and their relation to the electrochromic and/or supercapacitor characteristics is discussed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.50-50
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• 2001

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.253-256
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• 2010

Different active layer thicknesses for zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric using injector type atomic layer deposition. The properties of the ZnO TFTs were influenced by the active thickness and width-to-length (W/L) ratio of the device. The threshold voltage of ZnO TFTs shifted positively as the active layer thickness decreased, while the subthreshold slope decreased. The W/L ratio of ZnO TFTs also affected the mobility and subthreshold slope. An optimized TFT structure exhibited an on-tooff current ratio of above 106 with solid saturation.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.347-350
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• 2013

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.693-698
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• 1995

We fabricated Zinc Oxide transparent conductive thin films with 2wt% of A1203 doping using rf magnetron sputtering. And we investigated electrical and optical characteristics of them which were made with conditions ; rf power 60-300W, thickness of film 3000 11000.angs.. Resistivity, carrier concentration and Hall mobility were investigated for electrical characteristics. Transmittance and optical band gap were investigated with Spectrophotometer in the wavelength range between 200-900 nm. As a result, ZnO thin film fabricated with rf power of 180W and thickness of 5000.angs. showed the best properties. At the best condition, the sample has resistivity of 1*10$\^$-4/.ohm.cm and transmittance of 95% in the visible range.

• 한국안광학회지
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• 제7권2호
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• pp.155-161
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• 2002

전도성 혹은 비전도성 지지체에서 전기변색이 가능한 수 nm에서 수액 nm 두께의 금속 니켈 박막 형성에 대한 연구를 수행하였다. 광학렌즈나 혹은 LCD에 사용되는 ITO, 실리콘 웨이퍼에 박막 형성에 대한 연구는 다양한 두께의 니켈 박막은 자체로서의 응용 가능성 뿐 아니라, 광전기화학 소자, 특히 선글라스로 대변되는 변색 소자에의 응용 가능성이 아주 크다. 이러한 소자들은 나노 기술 응용과 양자점의 응용 등으로 경박단소형의 렌즈나 전지, 유리 그리고 태양 선지 등에 응용이 가능하다. 전기화학적으로 니켈 금속을 ITO 유리위에 코팅한 후, AFM, XRD을 이용하여 미세구조를 확인하고, 순환전압전류법, 시간대전류법, 임피던스를 이용하여 이들의 전기화학적 박막 특성을 조사하였다.

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.9-15
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• 2003

This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.83-88
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• 1996

Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.110-113
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.