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http://dx.doi.org/10.4313/TEEM.2010.11.6.253

Effect of Channel Scaling on Zinc Oxide Thin-Film Transistor Prepared by Atomic Layer Deposition  

Choi, Woon-Seop (School of Display Engineering, Hoseo University)
Publication Information
Transactions on Electrical and Electronic Materials / v.11, no.6, 2010 , pp. 253-256 More about this Journal
Abstract
Different active layer thicknesses for zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric using injector type atomic layer deposition. The properties of the ZnO TFTs were influenced by the active thickness and width-to-length (W/L) ratio of the device. The threshold voltage of ZnO TFTs shifted positively as the active layer thickness decreased, while the subthreshold slope decreased. The W/L ratio of ZnO TFTs also affected the mobility and subthreshold slope. An optimized TFT structure exhibited an on-tooff current ratio of above 106 with solid saturation.
Keywords
Zinc oxide; Atomic layer deposition; Thin-film transistor;
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