• Journal of the Korean Society for Nondestructive Testing
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• v.19 no.3
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• pp.189-199
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• 1999

The resonance scattering of acoustic waves from the cylindrical shells of nuclear fuel rods coated with oxide layers has been theoretically modeled and numerically analyzed for the propagation characteristics of the circumferential waves. The normal mode solutions of the scattering pressure of the coated shells have been obtained. The pure resonance components have been isolated using the newly proposed inherent background coefficients. The propagation characteristics of resonant circumferential waves for the shells coated with oxide layers are affected by the presence and the thickness of an oxide layer. The characteristics have been experimentally confirmed through the method of isolation and identification of resonances. The change of the phase velocity of the $A_1$ circumferential wave mode for the coated shell is negligible at the specified partial waves in spite of the presence of the oxide layer and the increase in coating thickness. Utilizing the invariability characteristics of the phase velocity of the $A_1$ mode, the oxide layer thickness of the coated shells can be estimated. A new nondestructive technique for the relative measurement of the coating thickness of coated shells has been proposed.

• Proceedings of the Korean Nuclear Society Conference
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• 2002.10a
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• pp.337-337
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• 2002

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.336-341
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• 2008

Recently, research on a flat panel display(FPD) has focused on organic light-emitting display(OLED) which has wide angle of view, high contrast ratio and low power consumption. ITO(Indium-Tin-Oxide) films are the most widely used material as a transparent electrode of OLED and also in many other display devices like LCD or PDP. The performance and efficiency of OLED is related to the surface condition of ITO coated glass substrate. The typical surface defect of glass substrate is measured for electric characteristics and physical condition for transmittance and roughness. Since ITO coated glass substrate can be destroyed for inspection about surface roughness, sheet resistance, film thickness and transmittance, precise fabrication condition should be made based on the estimated relationship. In this paper, ITO films were prepared on the commercial glass substrate by the Ion-Plating method changing the partial pressure of gas(Ar, 02) and the chamber temperature between $200^{\circ}C$ and $300^{\circ}C$. The characteristics of films were examined by the 4-point probe, supersonic thickness measurement, transmittance measurement and AFM. We estimated the relationship between processing parameters(Ar gas, O2 gas, Temperature) and properties of ITO films (Sheet Resistance, Film Thickness, Transmittance, Surface Roughness).

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.32 no.2
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• pp.157-163
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• 1996

To ceramic film, $SiO_2$ and $Al_2O_3$, coated on pure Fe and stainless steel(SUS41O) by RF magnetron sputtering, the adherence between mm and substarte was studied. The adherence index (${\chi}$) was determined by the measure of micro hardness test. Also, the corrosion resistance on oxide coatings was studied using electrochemical measurement. The main results obtained are as the following: 1) In the micro-hardness test, with $1{\mu}m$ thickness mm, it has only one the value of ${\chi}$. Above $2{\mu}$thickness fIlm, however, get another value of ${\chi}$as the cracks in fIlm. 2) The oxide fIlm adhere well on the mild materials such as pure steel than high intensity materials like stainless. 3) Alumina($Al_2O_3$) coated materials have better corrosion resistance than silica($SiO_2$)coated materials

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.372-380
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• 2018

Anodization techniques are widely used in the area of surface treatment of aluminum alloys because of its simplicity, low-cost and good corrosion resistance. In this study, we investigated the relationship between the properties (porosity and thickness) of anodic aluminum oxide (AAO) and its corrosion behavior. Aluminum 5052 alloy was anodized in 0.3 M oxalic acid at $0^{\circ}C$. The anodizing of aluminum 5052 was performed at 20 V, 40 V and 60 V for various durations. The corrosion behavior was studied in 3.5 wt % NaCl using potentiodynamic polarization method. Results showed that the pore diameter and thickness increased as voltage and anodization time increased. The relatively thick oxide film revealed a lower corrosion current density and a higher corrosion potential value.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.213-213
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• 2000

A sensor system which can measure the transmittance of ITO(Indium Tin Oxide) layed glass is proposed. The sensor system includes a single wavelength laser beam source, photo diodes and electronic circuit processing sensor signal. The wavelength of laser is 543.5 m, this is most sensitive wavelength to photopic and scotopic vision. We applied the sensor to measure transmittance of ITO layer on general manufacturing environment and verified the effectiveness of sensor through experimental measurement.

• Journal of Magnetics
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• v.22 no.1
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• pp.100-103
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• 2017

We studied the microstructure and magnetic properties of Fe nanosized powder synthesized by the pulsed wire evaporation method. The x-ray diffraction spectrum confirmed that this powder had a pure ${\alpha}$-Fe phase. Scanning electron microscope and transmission electron microscope measurements indicated that the prepared powder had uniform spherical shape with core-shell structure. The mean powder size was about 35 nm and the thickness of the surface passivation layer was about 5 nm. Energy dispersive X-ray spectroscopy measurement indicated that the surface passivation layer was iron oxide. Magnetic field dependent magnetization measurement at room temperature showed that the maximum magnetization of the prepared powder was 177.1 emu/g at 1 T.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.