• 비파괴검사학회지
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• 제19권3호
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• pp.189-199
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• 1999

산화막이 피복된 원전 연료봉의 원통형 쉘에 대한 공명산란 해석을 수행하고 원주파 전파 특성을 연구하였다. 피복 쉘에 대한 산란 음압의 정규 모우드 해를 구하였고 최근에 새롭게 제안된 고유 배경음압 계수를 이용하여 피복 쉘의 순수 공명 신호를 분리하였다. 12%의 상대 두께를 갖는 원통형 피복 쉘에 대하여 산화막 두께 증가에 따른 공명 원주파의 전파 특성을 해석하였다. 산화막의 존재와 그 두께가 증가할 때 정규 모우드의 차수에 따라 원주파의 전파 특성이 크게 변화한다. 제 1차 반대칭 ($A_1$) 원주파에서 특정 부분파의 위상속도는 산화막이 존재하고 그 두께가 증가함에도 불구하고 위상속도가 일정 한 특성을 보인다. 공명신호를 분리하고 공명 모우드를 확인하는 실험을 수행하여 $A_1$ 원주파의 전파 특성을 확인하였다. $A_1$ 원주파의 위상속도 일정 특성을 이용함으로써 산화막의 두께를 상대적으로 측정 할 수 있는 새로운 비파괴 평가방법을 제안하였다.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2002년도 추계학술발표회요약집
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• pp.337-337
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• 2002

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• 제어로봇시스템학회논문지
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• 제14권4호
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• pp.336-341
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• 2008

Recently, research on a flat panel display(FPD) has focused on organic light-emitting display(OLED) which has wide angle of view, high contrast ratio and low power consumption. ITO(Indium-Tin-Oxide) films are the most widely used material as a transparent electrode of OLED and also in many other display devices like LCD or PDP. The performance and efficiency of OLED is related to the surface condition of ITO coated glass substrate. The typical surface defect of glass substrate is measured for electric characteristics and physical condition for transmittance and roughness. Since ITO coated glass substrate can be destroyed for inspection about surface roughness, sheet resistance, film thickness and transmittance, precise fabrication condition should be made based on the estimated relationship. In this paper, ITO films were prepared on the commercial glass substrate by the Ion-Plating method changing the partial pressure of gas(Ar, 02) and the chamber temperature between $200^{\circ}C$ and $300^{\circ}C$. The characteristics of films were examined by the 4-point probe, supersonic thickness measurement, transmittance measurement and AFM. We estimated the relationship between processing parameters(Ar gas, O2 gas, Temperature) and properties of ITO films (Sheet Resistance, Film Thickness, Transmittance, Surface Roughness).

• 수산해양기술연구
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• 제32권2호
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• pp.157-163
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• 1996

To ceramic film, $SiO_2$ and $Al_2O_3$, coated on pure Fe and stainless steel(SUS41O) by RF magnetron sputtering, the adherence between mm and substarte was studied. The adherence index (${\chi}$) was determined by the measure of micro hardness test. Also, the corrosion resistance on oxide coatings was studied using electrochemical measurement. The main results obtained are as the following: 1) In the micro-hardness test, with $1{\mu}m$ thickness mm, it has only one the value of ${\chi}$. Above $2{\mu}$thickness fIlm, however, get another value of ${\chi}$as the cracks in fIlm. 2) The oxide fIlm adhere well on the mild materials such as pure steel than high intensity materials like stainless. 3) Alumina($Al_2O_3$) coated materials have better corrosion resistance than silica($SiO_2$)coated materials

• 한국재료학회지
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• 제12권5호
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• 한국표면공학회지
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• 제51권6호
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• pp.372-380
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• 2018

Anodization techniques are widely used in the area of surface treatment of aluminum alloys because of its simplicity, low-cost and good corrosion resistance. In this study, we investigated the relationship between the properties (porosity and thickness) of anodic aluminum oxide (AAO) and its corrosion behavior. Aluminum 5052 alloy was anodized in 0.3 M oxalic acid at $0^{\circ}C$. The anodizing of aluminum 5052 was performed at 20 V, 40 V and 60 V for various durations. The corrosion behavior was studied in 3.5 wt % NaCl using potentiodynamic polarization method. Results showed that the pore diameter and thickness increased as voltage and anodization time increased. The relatively thick oxide film revealed a lower corrosion current density and a higher corrosion potential value.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.213-213
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• 2000

A sensor system which can measure the transmittance of ITO(Indium Tin Oxide) layed glass is proposed. The sensor system includes a single wavelength laser beam source, photo diodes and electronic circuit processing sensor signal. The wavelength of laser is 543.5 m, this is most sensitive wavelength to photopic and scotopic vision. We applied the sensor to measure transmittance of ITO layer on general manufacturing environment and verified the effectiveness of sensor through experimental measurement.

• Journal of Magnetics
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• 제22권1호
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• pp.100-103
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• 2017

We studied the microstructure and magnetic properties of Fe nanosized powder synthesized by the pulsed wire evaporation method. The x-ray diffraction spectrum confirmed that this powder had a pure ${\alpha}$-Fe phase. Scanning electron microscope and transmission electron microscope measurements indicated that the prepared powder had uniform spherical shape with core-shell structure. The mean powder size was about 35 nm and the thickness of the surface passivation layer was about 5 nm. Energy dispersive X-ray spectroscopy measurement indicated that the surface passivation layer was iron oxide. Magnetic field dependent magnetization measurement at room temperature showed that the maximum magnetization of the prepared powder was 177.1 emu/g at 1 T.

• Current Photovoltaic Research
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• 제10권1호
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.