• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.151-161
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• 1991

The isothermal oxidation behaviour of commercial superalloys produced in Korea was investigated by using Cahn-2000 microbalance in air at $1000^{\circ}C$ and $1100^{\circ}C$. The effect of alloying elements on the isothermal oxidation was studied by examination of the oxide structures, their morphologies, and EDS linescanning and mapping of cross-section of oxidized specimens. Generally, external Cr2O3 films were formed on all alloy surface, but were not pure, The effect on the oxidation behaviour of refractory elements such as Nb, Mo in Inconel 718 was considered to be deleterious, and the formation of internal Al oxide in Inconel 601 was beneficial.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.357-361
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• 2001

The possibility of producing Cr$_2$O$_3$powder from waste magnesia-chromium refractory was investigated by sulfuric acid reaction, alkali fusion, water leaching & purification and heat treatment. The effects of temperature, the amount of NaOH added and the flow rate of air on chromium extraction efficiency in an alkali fusion step were investigated. The fusion product was leached with methanol to solve free-NaOH, and then leached with water to produce a Na$_2$CrO$_4$solution. The purity of chrome(Ⅵ) oxides, prepared both from monochromate with an impurity content and monochromate purified with $CO_2$were also examined. The purified monochromate solution was reduced from Cr(Ⅵ) to Cr(III) with NaHSO$_3$solution. The reduced solution was neutralized with NaOH to produce Cr(OH)$_3$. Water washing was treated to eliminate Na$_2$SO$_4$from neutralized Cr(OH)$_3$slurry. The washed Cr(OH)$_3$was dried and thermally treated to produce Cr$_2$O$_3$powder. The properties like lightness and hue of Cr$_2$O$_3$fabricated in this study were L=47.47, a=-14.40 and b=17.21.

• Resources Recycling
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• v.5 no.4
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• pp.17-24
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• 1996

The computer simulation model was established to verify the applicability of smelting reduction concept to treatment of industrial wastes which becomes issue on the enviromental and recycling view point. Computer simulation model provides as following results. The increase of post combustion ratio(PCR) and heat transfer efficiency of PC energy(HTE) is effective ways to save energy. But, in order to increase PCR, recovery efficiency of post combustion energy(HTE) have to be higher than 85% HTE considering refractory life and saving energy together. Coke is most useful fuel source because it shows lowest dependence of PCR and low hydrogen content. The quality of hot metal of current process would be expected to the similar level with that of blast furnace. The utilization of scrap and Al dross can be also possible to maximize the advantages of current process which is high temperature and chemical dilution with hot metal and slag. In case of scrap, energy consumption was slightly increases because of heating up energy of scrap. Consquently, current process concept provides the possibility of intergrating recycles of industrial wastes materials such as EAF slag, coke oven dust, life terminated acidic refractory, aluminium dross and scrap by smelting reduction process.

• Journal of Life Science
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• v.24 no.2
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• pp.181-185
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• 2014

We identified SNPs (single nucleotide polymorphisms) for endothelial nitric oxide synthase (eNOS) genes in the Korean genome. eNOS is present in the vascular endothelium, platelets, and several other cell types that continuously produce modest amounts of NO. Endothelium-derived NO plays a key role in the regulation of vascular tone, and the impaired effects of NO on the cardiovascular system appear to be responsible for coronary atherosclerosis and thrombosis. In recent studies, a missense variant within exon 7 of the eNOS gene in patients with coronary spastic angina-GAG to GAT substitution, which results in the replacement of glutamic acid by aspartic acid (Glu298Asp [G894T])-has been identified and is known to be significantly associated with coronary spasm. We prepared PCR primers based on sequences in Genbank. Primers were prepared for normal and SNPs separately, as reported for other Asian countries, such as G894T. Their sequences were different only at the 3' ends so that primer extension could only by possible when base pairs between templates and primers matched. We also employed ARMS (Amplification Refractory Mutation System) technology to improve the specificity of the PCR reaction. In conclusion, we were able to demonstrate the eNOS G894A polymorphism in Korean gemone. This study should facilitate research on the cause of myocardial infarction and development on further therapy at the genetic level.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.115-118
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• 2009

The use of dolomite refractories has increased during the past several years in the manufacturing of clean steel during the stainless steelmaking process. However, at the same time, the use of dolomite refractories has led to what is known as the skull formation. In the present work, to understand the skull formation, the wetting characteristics of dolomite substrates by liquid Fe-19wt%Cr-10wt%Ni alloys in various oxygen partial pressures were initially investigated at 1753K using the sessile drop technique. For comparison, the wetting characteristics of alumina substrates were investigated with the same technique. It was found that the wetting index, (1+$cos{\theta}$), of dolomite is approximately 40% higher compared to those of alumina. In addition, the oxygen partial pressure to generate the surface oxide, which may capture the liquid metal on the refractory surface, for dolomite is much lower than that for alumina. From this study, it was concluded that the use of dolomite is much more closely associated with the skull formation compared to the use of alumina due to the stronger wettability and the surface oxide formation at a lower oxygen partial pressure of dolomite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.211-214
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• 2001

The undesirable phase transformation of zirconium dioxide at high temperatures can be eliminated by stabilization of the cubic phase with an addition of a selected alkaline earth or rare-earth oxide. In this paper the ionic conductivity of cubic solid solutions in the stabilized ZrO$_2$ by CaO-Y$_2$O$_3$ system was examined. The higher ionic conductivity appears to be related to lower activation energy rather than to the number of oxygen vacancies dictated by composition. Those compositions of highest conductivity lie close to the cubic-monoclinic solid-solution phase boundary. Conductivity temperature data are presented that indicate a reversible order-disorder transition for Zr$_2$2-Y$_2$O$_3$cubic solid solutions containing 20 and 25 mole % $Y_2$O$_3$.

• Journal of the Korean Recycled Construction Resources Institute
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• v.12 no.1
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• pp.40-46
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• 2024

A novel approach is presented to address issues associated with the use of strong acidic solutions for the leaching of magnesium oxide (MgO) from spent magnesia-carbon refractories. An ultrasonic flotation and separation process is employed, with a mildly acidic solvent, acetic acid, used to selectively chelate MgO from the spent refractories. When using 2 M acetic acid as a solvent, the recovery of the graphite exhibited 99.7 % with high purity of 72.7 %, showing a significant improvement compared to using water as the solvent. Furthermore, the technology presented in this study offers a method for producing magnesium acetate through the reaction of MgO in spent refractory with acetic acid, providing a means for the purification and separation of graphite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.34-41
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• 1984

MOEN/MO double layer which is to be used It)r the RMOS (refractory metal oxide semiconductor) gate material has been fabricated by means of low temperature reactive sputtering in N2 and Ar mixture. Good Mo2N film was obtained in the volumetric mixture of Ar:N2=95:5. The sheet resistance of the fabricated Mo7N film was about 1.20 - 1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film, and this would enable to improve the operational speed of devices fabricated with this material. When PSG (phosphorus silicate glass) was used as impurity diffusion source for the source and drain of the RMOSFET in the N2 atmosphere at about 110$0^{\circ}C$, the Mo2N was reduced to Mo resulting in much smaller sheet resistance of about 0.38 ohm/square. The threshold voltage of the RMOSFET fabricated in our experiment was - 1.5 V, and both depletion and enhancement mode RMOSFETs could be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.