• Tribology and Lubricants
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• v.18 no.4
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• pp.260-266
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• 2002

In this study, the effects of oxide layer farmed on the wear tracks of TiN coated silicon wafer on friction and wear characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with 1 ${\mu}{\textrm}{m}$ in coating thickness. AISI 52100 steel ball was used fur the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction and wear characteristics using X-ray diffraction(XRD), Auger electron spectroscopy(AES), scanning electron microscopy (SEM) and multi-mode atomic force microscope(AFM).

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.167-168
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• 2002

In this study, the effects of oxide layer formed on the wear tracks of TiN coated silicon wafer on friction characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with $1\;{\mu}m$ in coating thickness. AISI 52100 steel balls were used for the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction characteristics using X-ray diffraction (XRD). scanning electron microscopy (SEM) and friction force microscope (FFM).

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.4
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• pp.1033-1040
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• 1995

To simulate strength reliability and durability of ceramic parts under gas turbine application environments, particle impact damage behaviors in silicon carbide oxidized at 1673 K and 1523 K for 200 hours in atmosphere were investigated. The long-term oxidation produced a slight increase in the static fracture strength. Particle impact caused a spalling of oxide layer. The patterns of spalling and damage induced were dependent upon the property and impact velocity of the particle. Especially, the difference in spalling behaviors induced could be explained by introducing the formation mechanism of lateral crack and elastic-plastic deformation behavior at impact sit. At the low impact velocity regions, the oxidized SiC showed a little increase in the residual strength due to the cushion effect of oxide layer, as compared with the as-received SiC without oxide layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.940-943
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• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.

• Corrosion Science and Technology
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• v.18 no.6
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• pp.285-291
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• 2019

In this study, the corrosion characteristics of T22 and T92 steel were investigated in 6O₂ + 16CO₂ + 2SO₂ gas environment at 650 ℃. Corrosion characteristics were characterized by weight gain, oxide layer thickness, scanning electron microscope, optical microscope, energy dispersive X-ray spectroscopy, and X-ray diffraction. T22 and T92 steel tended to stagnate oxide layer growth over time. Oxidation kinetics were analyzed using the data of oxide layer thickness, and a regression model was presented. The regression model was significantly acceptable. The corrosion rate between the two steels through the regression model showed significant difference. The T92 steel was approximately twice as large as the time exponent and showed very good corrosion resistance compared to the T22 steel. In both steels, the oxide layer mainly formed a Fe-rich oxide layer composed of hematite (Fe₂O₃), magnetite (Fe₃O₄), and spinel (FeCr₂O₄). Sulfide segregation occurred in the oxide layer due to SO₂ gas. However, the locations of segregation for the T22 and T92 steel were different.

• Transactions of Materials Processing
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• v.32 no.3
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• pp.160-165
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• 2023

As the supply of eco-friendly vehicles increases, the application rate of hot stamping components is rising to reduce vehicle weight and improve safety. Although Al-Si coated steel sheets are commonly used in hot stamping processes, their manufacturing costs are elevated due to process patents and royalties. Various hot stamping studies have been conducted to reduce these production costs. In this study, we derived a process control method for suppressing the oxide layer of hot stamping parts using uncoated boron steel sheets. Firstly, hat-shaped parts were hot stamped under atmospheric conditions to analyze the tendency of oxide layer formation by location. Then, the Gleeble system was used to observe oxide layer formation based on oxygen content under various atmospheric conditions. Finally, the oxide layer thickness was quantitatively measured using SEM images.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2577-2583
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• 2009

Presented are the formation of iron oxide layers on evaporator tubes in an actual fossil power plant operated under all volatile treatment (AVT) condition and an experimental simulation of iron oxide formation in the presence of ferrous and ferric ions. After actual operations for 12781 and 36326 hr in the power plant, two iron oxide layers of magnetite on the evaporator tubes were found: a continuous inner layer and a porous outer layer. The experimental simulation (i.e., artificial corrosion in the presence of ferrous and ferric ions at 100 ppm level for 100 hr) reveals that ferrous ions turn the continuous inner oxide layer on tube metal to cracks and pores, while ferric ions facilitate the production of porous outer oxide layer consisting of large crystallites. Based on a comparison of the oxide layers produced in the experimental simulation with those observed on the actually used tubes, we propose possible routes for oxid layer formation schematically. In addition, the limits of the proposed corrosion routes are discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.735-738
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• 2000

This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500$^{\circ}C$∼600$^{\circ}C$) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19${\AA}$/min at 500$^{\circ}C$, 0.43${\AA}$/min at 550$^{\circ}C$, 1.2${\AA}$/min at 600$^{\circ}C$ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600$^{\circ}C$, we can expect oxide growth rate is 5.2${\AA}$/min at 1000$^{\circ}C$. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature, 1 atm conditions. For higher-temperature, high-pressure oxidation, the oxidation time is reduced significantly

• Korean Journal of Metals and Materials
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• v.49 no.12
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• pp.950-955
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• 2011

In the present study, the formation of hollow Cu oxide nanoparticles through the oxidation process at temperatures from 200 to $300^{\circ}C$ has been studied by transmission electron microscopy with Cu nanoparticles produced by the plasma arc discharge method. The Cu nanoparticles had a thin oxide layer on the surface at room temperature and the thickness of this oxide layer increased during oxidation in atmosphere at $200-300^{\circ}C$ However, the oxide layer consisted of $Cu_2O$ and CuO after oxidation at $200^{\circ}C$ whereas this layer was comprised of only CuO after oxidation at $300^{\circ}C$ On the other hand, hollow Cu oxide nanoparticles are obtained as a result of vacancy aggregation in the oxidation processes, resulting from the rapid outward diffusion of metal ions through the oxide layer during the oxidation process.

• Applied Microscopy
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• v.43 no.4
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• pp.173-176
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• 2013

The oxidation behavior of the crystallized $Al_{87}Ni_3Y_{10}$ alloy has been investigated with an aim to compare with that of the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The oxidation at 873 K occurs as follows: (1) growth of an amorphous aluminum-yttrium oxide layer (~10 nm) after heating up to 873 K; and (2) formation of $YAlO_3$ crystalline oxide (~220 nm) after annealing for 30 hours at 873 K. Such an overall oxidation step indicates that the oxidation behavior in the crystallized $Al_{87}Ni_3Y_{10}$ alloy occurs in the same way as in the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The simultaneous presence of aluminum and yttrium in the oxide layer significantly enhances the thermal stability of the amorphous structure in the oxide phase. Since the structure of aluminum-yttrium oxide is dense due to the large difference in ionic radius between aluminum and yttrium ions, the diffusion of oxygen ion through the amorphous oxide layer is limited thus stabilizing the amorphous structure of the oxide phase.