• Title/Summary/Keyword: oxide layer

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Effect of Thermally Grown TiO2 Interlayer on Chlorine Evolution Efficiency and Durability of Ti/RuO2-PdO-TiO2 Electrodes (열산화법으로 생성된 TiO2 중간보호층이 Ti/RuO2-PdO-TiO2전극의 염소발생 효율 및 내구성에 미치는 영향)

  • Park, Da Jung;Choi, Sung Mook;Lee, Kyu Hwan
    • Journal of the Korean institute of surface engineering
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    • v.51 no.4
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    • pp.207-213
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    • 2018
  • Not only efficiency of chlorine evolution reaction (CER) but also durability namely service life is very important property in dimensional stable anode for Ballast Water Management System (BWMS) for marine ships. Many researchers have been focused on improving efficiency of CER by controlling composition, phase and surface area for a long time, but the efforts to increase durability was relatively small. In this study, we have investigated the effect of $TiO_2$ protective interlayers on efficiency and durability of DSA electrodes. $TiO_2$ protective interlayers were prepared by thermal oxidation at 500, 600 and $700^{\circ}C$ on Ti substrate. And then the DSA electrodes consisting of $Ti/RuO_2-PdO-TiO_2$ were prepared by thermal decomposition method on $TiO_2$ interlayers. The efficiencies of CER of DSA electrodes without $TiO_2$ interlayer and with $TiO_2$ interlayer grown at 500, 600 and $700^{\circ}C$ were 94.19, 94.45, 84.60 and 76.75% respectively. On the otherhand, durabilities were 30, 55, 90 and 65 hours respectively. In terms of industrial aspect, the performance of DSA is considered high efficiency and durability which can correspond to total production of chlorine. If we considered the performance index of DSA as the product of efficiency and durability, performance indices could be recalculated as 28.26, 50.85, 76.14 and 49.89 respectively. As the thermal oxidation temperature increasing, life time were increased remarkerbly, while efficiency of CER was decreased slightly. As a result, DSA electrode with $TiO_2$ interlayer grown at $600^{\circ}C$ has shown about 2.7 times performace of original DSA electrode without $TiO_2$ interlayer.

Correlation between Characteristics of SOD in Coastal Sewage and Predictive Factor (연안 저질 SOD의 특성과 유발 영향인자에 대한 상관관계)

  • Kim, Beom-Geun;Khirul, Md Akhte;Kwon, Sung-Hyun;Cho, Dae-Chul
    • Korean Journal of Environment and Ecology
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    • v.33 no.5
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    • pp.596-604
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    • 2019
  • This study conducted a sediment culture experiment to investigate the effects of sediment oxygen demand (SOD) and environmental factors on sediment and water quality. We installed a leaching tank in the laboratory, cultured it for 20 days, and analyzed the relationship between P and Fe in the sediment. As a result, the dissolved oxygen of the water layer decreased with time, while the oxidation-reduction potential of the sediment progressed in the negative direction to form an anaerobic reducing environment. The SOD was measured to be 0.05 mg/g at the initial stage of cultivation and increased to 0.09 mg/g on the 20th day, indicating the tendency of increasing consumption of oxygen by the sediment. The change is likely to have caused by oxygen consumption from biological-SOD, which is the decomposition of organic matter accumulated on the sediment surface due to the increase of chl-a, and chemical-SOD consumed when the metal-reducing product produced by the reduction reaction is reoxidized. The correlation between SOD and causality for sediment-extracted sediments was positive for Ex-P and Org-P and negative for Fe-P. The analysis of the microbial community in the sediment on the 20th day showed that anaerobic iron-reducing bacteria (FeRB) were the dominant species. Therefore, when the phosphate bonded to the iron oxide is separated by the reduction reaction, the phosphate is eluted into the water to increase the primary productivity. The reduced substance is reoxidized and contributes to the oxygen consumption of the sediment. The results of this study would be useful as the reference information to improve oxygen resin.

Development of Pearl Pigment which Has the Similar Properties of Snow in Make-up Products (눈의 물리적인 특성과 유사한 펄 원료 개발 및 이를 이용한 화장료 조성물 제조방법)

  • Lee, Yun-Ha;Kim, Kyung-Nam;Sunwoo, Gun;Rick, Norbert;Reichnek, Antje;Choi, Yeong-Jin;Ko, Seung-Yong;Han, Sang-Hun;Kang, Hak-Hee;Lee, Ok-Sub
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.34 no.3
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    • pp.167-173
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    • 2008
  • Pearlescent pigments have been widely used in cosmetic applications. Up to date; the most widely used pearl effect pigment is the mica-based pigment, which uses natural mica as the substrate that is in turn coated with metal of oxide interference layer. However, when natural mica is employed as a base material the final product often has a yellowish color, mainly due to the fact that natural mica contains low levels of iron as an impurity[1,2]. This study was focused on developing a pearl pigment which might have a similar sparkling effect as snow. This effect was found to be due to its structure and purity, and this concept was also applied to development of our pearl pigments. More specifically, this invented pearl effect pigments are the mixture of glass-flake and glass-flake coated metal oxides and present the optical properties of snow matrix such as refractive index and particle size, unlike only the glass-flake or glass-flake coated metal oxides to be applied in. Using base material having similar physical properties (refractive index and particle size) as snow matrix as platelet for pearl effect pigments, these invented pigments present a three-dimensional glittering effect of the snow matrix. With this invented figments an applied; we achieved the beauty of snow crystal from makeup products containing these pigments.

Analysis on the post-irradiation examination of the HANARO miniplate-1 irradiation test for kijang research reactor

  • Park, Jong Man;Tahk, Young Wook;Jeong, Yong Jin;Lee, Kyu Hong;Kim, Heemoon;Jung, Yang Hong;Yoo, Boung-Ok;Jin, Young Gwan;Seo, Chul Gyo;Yang, Seong Woo;Kim, Hyun Jung;Yim, Jeong Sik;Kim, Yeon Soo;Ye, Bei;Hofman, Gerard L.
    • Nuclear Engineering and Technology
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    • v.49 no.5
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    • pp.1044-1062
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    • 2017
  • The construction project of the Kijang research reactor (KJRR), which is the second research reactor in Korea, has been launched. The KJRR was designed to use, for the first time, U-Mo fuel. Plate-type U-7 wt.% Mo/Al-5 wt.% Si, referred to as U-7Mo/Ale5Si, dispersion fuel with a uranium loading of $8.0gU/cm^3$, was selected to achieve higher fuel efficiency and performance than are possible when using $U_3Si_2/Al$ dispersion fuel. To qualify the U-Mo fuel in terms of plate geometry, the first miniplates [HANARO Miniplate (HAMP-1)], containing U-7Mo/Al-5Si dispersion fuel ($8gU/cm^3$), were fabricated at the Korea Atomic Energy Research Institute and recently irradiated at HANARO. The PIE (Post-irradiation Examination) results of the HAMP-1 irradiation test were analyzed in depth in order to verify the safe in-pile performance of the U-7Mo/Al-5Si dispersion fuel under the KJRR irradiation conditions. Nondestructive analyses included visual inspection, gamma spectrometric mapping, and two-dimensional measurements of the plate thickness and oxide thickness. Destructive PIE work was also carried out, focusing on characterization of the microstructural behavior using optical microscopy and scanning electron microscopy. Electron probe microanalysis was also used to measure the elemental concentrations in the interaction layer formed between the U-Mo kernels and the matrix. A blistering threshold test and a bending test were performed on the irradiated HAMP-1 miniplates that were saved from the destructive tests. Swelling evaluation of the U-Mo fuel was also conducted using two methods: plate thickness measurement and meat thickness measurement.

Study on Scientific Analysis about Red Pigment And Binder - The Korean Ancient Red Pottery - (한국 고대 붉은 간토기의 적색 안료 및 교착제에 대한 과학적 분석)

  • Lee, Ui Cheon;Park, Jung Hae;Lee, Je Hyun;Kim, Soo Chul
    • Journal of Conservation Science
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    • v.37 no.5
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    • pp.606-616
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    • 2021
  • From the collection of the National Kimhae Museum, qualitative analyses using microscopic observation, SEM-EDS, Raman spectroscopy, FT-IR-ATR spectroscopy, and GC-MS were conducted on three burnished red potteries-Jeoksaekmaoyeonwa burnished red pottery (Neolithic age red pottery), Dandomaoyeonwan burnished red pottery(Bronze age red pottery) and Jeoksaekmaoyeongajimun burnished red pottery(Bronze age red pottery)-to investigate the components of the red pigments and the binder. After the layers of the primer were separated from the red surface, crystals of red pigment particles and minerals were found on the red surface. Through SEM-EDS, Raman estimates that the red pigment is Among soil pigments with iron oxide(Fe2O3) as the main color development source, Red Ocher(Fe2O3). A band characteristic of the Urushiol polymer was detected in the FTIR-ATRspectra(4000~600cm-1), GC-MS analysis confirmed the presence of the benzenemethanol-2-prophenyl, 4-heptylphenol, 1-tetracecanol, heptafluorobutyric texidecane, all of which are the ingredients of the directional structure of the lacquer present in the red layer. Therefore, it seemed that the three burnished red pottery: Jeoksaekmaoyeonwan pottery(Neolithic age burnished red pottery), Dandomaoyeonwan pottery(bronze age burnished red pottery) and the Jeoksaekmaoyeongajimun pottery(bronze age burnished red pottery) made by mixing minerals and Red Ocher(Fe2O3), with lacquer.

Effect of Gate Dielectrics on Electrical Characteristics of a-ITGZO Thin-Film Transistors (게이트 절연막 조성에 따른 a-ITGZO 박막트랜지스터의 전기적 특성 연구)

  • Kong, Heesung;Cho, Kyoungah;Kim, Sangsig
    • Journal of IKEEE
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    • v.25 no.3
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    • pp.501-505
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    • 2021
  • In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with gate dielectrics of HfO2 and the mixed layers of HfO2 and Al2O3, and investigated the effect of gate dielectric on electrical characteristics of a-ITGZO TFTs. When only HfO2 was used as the gate dielectric, the mobility and subthreshold swing (SS) were 32.3 cm2/Vs and 206 mV/dec. For the a-ITGZO TFTs with gate dielectric made of HfO2 and Al2O (2:1, 1:1), the mobilities and SS were 26.4 cm2/Vs (2:1), 16.8 cm2/Vs(1:1), 160 mV/dec (2:1) and 173 mV/dec (1:1). On the other hand, the hysteresis window shown in transfer curves of the a-ITGZO TFTs was lessened from 0.60 to 0.09 V by the increase of Al2O3 ratio in gate dielectric, indicating that the interface trap density between the gate dielectric and channel layer decreases due to Al2O3.

Life Cycle Assessment on Process of Wet Tissue Production (물티슈 제조공정의 전과정 평가)

  • Ahn, Joong Woo
    • Clean Technology
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    • v.24 no.4
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    • pp.269-274
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    • 2018
  • In this study, Life Cycle Assessment (LCA) of wet tissue manufacturing process was performed. The wet tissue manufacturing process consists of preparation of wetting agent (chemical liquid), impregnation of nonwoven fabric into wetting agent and primary and secondary packaging. Data and information were collected on the input and output of the actual process from a certain company and the database of the Korea Ministry of Environment and some foreign countries (when Korean unavailable) were employed to connect the upper and the lower process flow. Based on the above and the potential environmental impacts of the wet tissue manufacturing process were calculated. As a result of the characterization, Ozone Layer Depletion (OD) is 3.46.E-06 kg $CFC_{11}$, Acidification (AD) is 5.11.E-01 kg $SO_2$, Abiotic Resource Depletion (ARD) is $3.52.E+00\;1yr^{-1}$, Global Warming (GW) is 1.04.E+02 kg $CO_2$, Eutrophication (EUT) is 2.31.E-02 kg ${PO_4}^{3-}$, Photochemical Oxide Creation (POC) was 2.22.E-02 kg $C_2H_4$, Human Toxicity (HT) was 1.55.E+00 kg 1,4 DCB and Terrestrial Ecotoxicity (ET) was 5.82.E-04 kg 1,4 DCB. In order to reduce the environmental impact of the manufacturing process, it is necessary to improve the overall process as other general cases and change the raw materials including packaging materials with less environmental impact. Conclusively, the energy consumed in the manufacturing process has emerged as a major issue, and this needs to be reconsidered other options such as alternative energy. Therefore, it is recommended that a process system should be redesigned to improve energy efficiency and to change to an energy source with lower environmental impact. Due to the nature of LCA, the final results of this study can be varied to some extent depending on the type of LCI DB employed and may not represent of all wet tissue manufacturing processes in the current industry.

Effect of composition on the structural and thermal properties of TiZrN thin film (TiZrN 박막의 조성이 구조적 특성 및 열적 특성에 미치는 영향)

  • Choi, Byoung Su;Um, Ji Hun;Seok, Min Jun;Lee, Byeong Woo;Kim, Jin Kon;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.1
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    • pp.37-42
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    • 2021
  • The effect of chemical composition on the structural and thermal properties of TiZrN thin films was studied. As the Zr fraction in the deposited TixZr1-xN (x = 0.87, 0.82, 0.7, 0.6, and 0.28) increased, microstructural changes consisted of reduction in the grain size and a gradual transition from columnar structure to granular structure were observed. In addition, it was also confirmed that a gradual crystal phase transition from TiN to TiZrN has occurred as the Zr fraction increased up to 0.4. After heat treatment at 900℃, Ti0.82Zr0.18N and Ti0.7Zr0.3N layers were converted to a form in which rutile phase TiO2 and TiZrO4 oxides coexist, while Ti0.6Zr0.4N layer was converted to TiZrO4 oxide. Among the five compositions of TiZrN films, the Ti0.6Zr0.4N showed the best high temperature stability and produced a significant enhancement in the thermal oxidation resistance of Inconel 617 through suppressing the surface diffusion of Cr caused by thermal oxidation of the Inconel 617 substrate.

Effects of Ar/N2 Two-step Plasma Treatment on the Quantitative Interfacial Adhesion Energy of Low-Temperature Cu-Cu Bonding Interface (Ar/N2 2단계 플라즈마 처리에 따른 저온 Cu-Cu 직접 접합부의 정량적 계면접착에너지 평가 및 분석)

  • Choi, Seonghun;Kim, Gahui;Seo, Hankyeol;Kim, Sarah Eunkyung;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.2
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    • pp.29-37
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    • 2021
  • The effect of Ar/N2 two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N2 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N2 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m2 and 2.33±0.67 J/m2, respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.

Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes (GaN계 수직형 발광 다이오드를 위한 N-face n-GaN의 인듐계 저저항 오믹접촉 연구)

  • Kang, Ki Man;Park, Min Joo;Kwak, Joon Seop;Kim, Hyun Soo;Kwon, Kwang Woo;Kim, Young Ho
    • Korean Journal of Metals and Materials
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    • v.48 no.5
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    • pp.456-461
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    • 2010
  • We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.