• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.176-179
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• 2001

Iron oxide powders were prepared under high temperature (up to $175^{\circ}C$) and pressure conditions( up to 129 pasi) by precipitation from metal nitrates with aqueous potassium hydroxide. Various types of iron oxide powders were obtained at different conditions. The size and the shape of the particles can be controlled as afunction of starting solution pH. The average particles size of the synthesized iron oxide powders increased, the particle shapes of the powders became fibrous, and the crystalline phase of the powder changes from iron oxide to iron hydroxide with increasing solution pH. The effects of synthesis parameters are discussed.

• YAKHAK HOEJI
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• v.35 no.4
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• pp.277-282
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• 1991

Rheological, colloidal and micromeritical properties were followed to investigate aging mechanisms of hydrous aluminum oxide suspension using Zeta-meter systems, BET adsorption apparatus, Master sizer and electronmicroscope. The results indicate that hydrous aluminum oxide suspension revealed plastic flow with thixotropy. The viscosity, thixotropy and yield value were increased with increasing concentration. During aging process, the viscosity and thixotropic index were increased by an addition of glycerin, however, sorbitol stabilized aging process of the suspension being accompanied with growth of particle size and reduction in specific surface area, pore area and pore volume, and consistency. Diminution of adsorptive power of the particles was also protected by addition of sorbitol to hydrous aluminum oxide suspension. From these results, one of aging mechanism of hydrous aluminum oxide suspension assumed growth and/or crystallization of colloidal particles in aqueous suspension.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.179-181
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• 1997

When grown the oxide single crystal including Li-ion, optimum oxygen condition is needed. Color and crack are caused in single crystal according too the change in the condition of the oxygen. LiTaO₃ crystals grown from off-composition of congruent melt composition under oxygen deficieny condition didn't generate any crack. LiNbO₃. LiTaO₃ crystals grown from congruent melt composition under optimum oxygen condition caused pale yellow color or colorless with no crack. Color gradually became colorless and generated cracks according to Oxygen excess.

• Plant Biotechnology Reports
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• v.2 no.2
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• pp.113-122
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• 2008

Nitric oxide (NO) affects the growth and development of plants and also affects plant responses to various stresses. Because NO induces root differentiation, we examined whether or not it is involved in increased ROS generation. Treatments with sodium nitroprusside (SNP), an NO donor, 2-phenyl-4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide (PTIO), a specific NO scavenger, and $N{\omega}-nitro-{\text\tiny{L}}-arginine$ methyl ester hydrochloride (${\text\tiny{L}}-NAME$), an NO synthase (NOS) inhibitor, revealed that NO is involved in the adventitious root growth of mountain ginseng. Supply of an NO donor, SNP, activates NADPH oxidase activity, resulting in increased generation of $O_2{^{{\cdot}-}}$, which subsequently induces growth of adventitious roots. Moreover, treatment with diphenyliodonium chloride (DPI), an NADPH oxidase inhibitor, individually or with SNP, inhibited root growth, NADPH oxidase activity, and $O_2{^{{\cdot}-}}$ anion generation. Supply of the NO donor, SNP, did not induce any notable isoforms of enzymes; it did, however, increase the activity of pre-existing bands of NADPH oxidase, superoxide dismutase, catalase, peroxidase, ascorbate peroxidase, and glutathione reductase. Enhanced activity of antioxidant enzymes induced by SNP supply seems to be responsible for a low level of $H_2O_2$ in the adventitious roots of mountain ginseng. It was therefore concluded that NO-induced generation of $O_2{^{{\cdot}-}}$ by NADPH oxidase seems to have a role in adventitious root growth of mountain ginseng. The possible mechanism of NO involvement in $O_2{^{{\cdot}-}}$ generation through NADPH oxidase and subsequent root growth is discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.424-430
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS (metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by AES, SIMS, TEM and AFM. The ONO films with different dimension of tunneling oxide, nitride, and blocking oxide were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$(blocking oxide)/O-rich SiOxNy (interface)/ N-rich SiOxNy(nitride)/O-rich SiOxNy(tunneling oxide). In addition, the SiON phase is distributed mainly near the tunneling oxide/nitride and nitride/blocking oxide interfaces, and the $Si_2NO$ phase is distributed mainly at nitride side of each interfaces and in tunneling oxide.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.609-616
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• 2019

Oxide coatings are formed on die-cast AZ91D Mg alloy through an environmentally friendly plasma electrolytic oxidation(PEO) process using an electrolytic solution of $NaAlO_2$, KOH, and KF. The effects of PEO condition with different duty cycles (10 %, 20 %, and 40 %) and frequencies(500 Hz, 1,000 Hz, and 2,000 Hz) on the crystal phase, composition, microstructure, and micro-hardness properties of the oxide coatings are investigated. The oxide coatings on die-cast AZ91D Mg alloy mainly consist of MgO and $MgAl_2O_4$ phases. The proportion of each crystalline phase depends on various electrical parameters, such as duty cycle and frequency. The surfaces of oxide coatings exhibit as craters of pancake-shaped oxide melting and solidification particles. The pore size and surface roughness of the oxide coating increase considerably with increase in the number of duty cycles, while the densification and thickness of oxide coatings increase progressively. Differences in the growth mechanism may be attributed to differences in oxide growth during PEO treatment that occur because the applied operating voltage is insufficient to reach breakdown voltage at higher frequencies. PEO treatment also results in the oxide coating having strong adhesion properties on the Mg alloy. The micro-hardness at the cross-section of oxide coatings is much higher not only compared to that on the surface but also compared to that of the conventional anodizing oxide coatings. The oxide coatings are found to improve the micro-hardness with the increase in the number of duty cycles, which suggests that various electrical parameters, such as duty cycle and frequency, are among the key factors controlling the structural and physical properties of the oxide coating.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.5
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• pp.243-248
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• 2017

In this study copper glaze samples were prepared with varying amount of tin oxide, and the chromatic characteristics of glazes were explained on the results of spectrophotometric, crystalline phase, and microstructural analyses. The red color of copper glaze was dissipated with the addition of tin oxide and turned into achromatic color due to the decrease of CIEab values. Tin oxide homogeneously distributed in the glaze layer interfered with the red color generation coming from the growth of Cu nuclei, and formed an alloy with metal copper around bubbles. This resulted in the decrease of metal copper peak intensity with minor $Cu_2O$ peak. With the 3.79 % tin oxide addition the glaze was appeared as gray due to the black color CuO and Cassiterite $SnO_2$ phases.

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.415-420
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• 2006

The residual stresses in the interface region of the Thermal Barrier Coating (TBC)/Thermally Grown Oxide (TGO)/Bond Coat (BC) were calculated on the TBC-coated superalloy samples using a Finite Element Method (FEM). It was found that the stress distribution of the interface boundary was dependent upon mainly the geometrical shape or its aspect ratio and the thickness of TGO layer, which was formed by growth and swelling behavior of oxide layer. Maximum compressive residual stress in the TBC/TGO interface is higher than that of the TGO/bond coat interface, and the tensile stress had nothing to do with change of an aspect ratio. The compressive residual stresses in the TBC/TGO and TGO/bond coat interface region increased gradually with the TGO growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.114-117
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• 2020

In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.