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http://dx.doi.org/10.4313/JKEM.2020.33.2.114

The Study of Electrical and Structural Performance of Aluminum Thin Film Deposited by Sputtering Method  

Kim, Doyoung (School of Electrical and Electronics Engineering, Ulsan College)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.33, no.2, 2020 , pp. 114-117 More about this Journal
Abstract
In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.
Keywords
Aluminum; Thin film; Sputtering; Grain growth; Anodic aluminum oxide;
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Times Cited By KSCI : 2  (Citation Analysis)
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