1 |
D. V. Sidelev, A. V. Yuryeva, V. P. Krivobokov, A. S. Shabunin, M. S. Syrtanov, and Z. Koishybayeva, J. Phys. Conf. Ser., 741, 012193 (2016). [DOI: https://doi.org/10.1088/1742-6596/741/1/012193]
DOI
|
2 |
M. M. Singh, G. Vijaya, M. S. Krupashankara, B. K. Sridhara, and T. N. Shridhar, Mater. Today: Proc., 5, 2696 (2018). [DOI: https://doi.org/10.1016/j.matpr.2018.01.050]
DOI
|
3 |
J. H. Lee, J. Korea Inst. Inf. Commun. Eng., 14, 923 (2010). [DOI: https://doi.org/10.6109/jkiice.2010.14.4.923]
DOI
|
4 |
Y. Homma and S. Tsunekawa, J. Electrochem. Soc., 132, 1466 (1985). [DOI: https://doi.org/10.1149/1.2114145]
DOI
|
5 |
S. I. Kwon, K. J. Yang, W. C. Song, J. H. Lee, and D. G. Lim, J. Korean Inst. Electr. Electron. Mater. Eng., 21, 415 (2008). [DOI: https://doi.org/10.4313/JKEM.2008.21.5.415]
DOI
|
6 |
Y. Wang, W. Tang, and L. Zhang, J. Mater. Sci. Technol., 31, 175 (2015). [DOI: https://doi.org/10.1016/j.jmst.2014.11.009]
DOI
|
7 |
C. Molteni, N. Marzari, M. C. Payne, and V. Heine, Phys. Rev. Lett., 79, 869 (1997). [DOI: https://doi.org/10.1103/PhysRevLett.79.869]
DOI
|
8 |
K. H. Jang, S. J. Hwang, and Y. C. Joo, Met. Mater. Int., 14, 147 (2008). [DOI: https://doi.org/10.3365/met.mat.2008.04.147]
DOI
|
9 |
F. M. Mwema, O. P. Oladijo, S. A. Akinlabi, and E. T. Akinlabi, J. Alloys Compd., 747, 306 (2018). [DOI: https://doi.org/10.1016/j.jallcom.2018.03.006]
DOI
|
10 |
H. Takatsuji, T. Arai, S. Tsuji, K. Kuroda, and H. Saka, Thin Solid Films, 337, 235 (1999). [DOI: https://doi.org/10.1016/S0040-6090(98)01384-4]
DOI
|