• 한국결정성장학회지
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• 제11권4호
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• pp.176-179
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• 2001

Iron oxide powders were prepared under high temperature (up to $175^{\circ}C$) and pressure conditions( up to 129 pasi) by precipitation from metal nitrates with aqueous potassium hydroxide. Various types of iron oxide powders were obtained at different conditions. The size and the shape of the particles can be controlled as afunction of starting solution pH. The average particles size of the synthesized iron oxide powders increased, the particle shapes of the powders became fibrous, and the crystalline phase of the powder changes from iron oxide to iron hydroxide with increasing solution pH. The effects of synthesis parameters are discussed.

• 약학회지
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• 제35권4호
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• pp.277-282
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• 1991

Rheological, colloidal and micromeritical properties were followed to investigate aging mechanisms of hydrous aluminum oxide suspension using Zeta-meter systems, BET adsorption apparatus, Master sizer and electronmicroscope. The results indicate that hydrous aluminum oxide suspension revealed plastic flow with thixotropy. The viscosity, thixotropy and yield value were increased with increasing concentration. During aging process, the viscosity and thixotropic index were increased by an addition of glycerin, however, sorbitol stabilized aging process of the suspension being accompanied with growth of particle size and reduction in specific surface area, pore area and pore volume, and consistency. Diminution of adsorptive power of the particles was also protected by addition of sorbitol to hydrous aluminum oxide suspension. From these results, one of aging mechanism of hydrous aluminum oxide suspension assumed growth and/or crystallization of colloidal particles in aqueous suspension.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.179-181
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• 1997

When grown the oxide single crystal including Li-ion, optimum oxygen condition is needed. Color and crack are caused in single crystal according too the change in the condition of the oxygen. LiTaO₃ crystals grown from off-composition of congruent melt composition under oxygen deficieny condition didn't generate any crack. LiNbO₃. LiTaO₃ crystals grown from congruent melt composition under optimum oxygen condition caused pale yellow color or colorless with no crack. Color gradually became colorless and generated cracks according to Oxygen excess.

• Plant Biotechnology Reports
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• 제2권2호
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• pp.113-122
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• 2008

Nitric oxide (NO) affects the growth and development of plants and also affects plant responses to various stresses. Because NO induces root differentiation, we examined whether or not it is involved in increased ROS generation. Treatments with sodium nitroprusside (SNP), an NO donor, 2-phenyl-4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide (PTIO), a specific NO scavenger, and $N{\omega}-nitro-{\text\tiny{L}}-arginine$ methyl ester hydrochloride (${\text\tiny{L}}-NAME$), an NO synthase (NOS) inhibitor, revealed that NO is involved in the adventitious root growth of mountain ginseng. Supply of an NO donor, SNP, activates NADPH oxidase activity, resulting in increased generation of $O_2{^{{\cdot}-}}$, which subsequently induces growth of adventitious roots. Moreover, treatment with diphenyliodonium chloride (DPI), an NADPH oxidase inhibitor, individually or with SNP, inhibited root growth, NADPH oxidase activity, and $O_2{^{{\cdot}-}}$ anion generation. Supply of the NO donor, SNP, did not induce any notable isoforms of enzymes; it did, however, increase the activity of pre-existing bands of NADPH oxidase, superoxide dismutase, catalase, peroxidase, ascorbate peroxidase, and glutathione reductase. Enhanced activity of antioxidant enzymes induced by SNP supply seems to be responsible for a low level of $H_2O_2$ in the adventitious roots of mountain ginseng. It was therefore concluded that NO-induced generation of $O_2{^{{\cdot}-}}$ by NADPH oxidase seems to have a role in adventitious root growth of mountain ginseng. The possible mechanism of NO involvement in $O_2{^{{\cdot}-}}$ generation through NADPH oxidase and subsequent root growth is discussed.

• 한국결정성장학회지
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• 제8권3호
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• pp.424-430
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• 1998

MONOS(metal-oxide-nitride-oxide-semicondutor) EEPROM에 응용하기 위한 얇은 ONO 유전층의 막 특성을 AES, SIMS, TEM 및 AFM을 이용하여 조사하였다. 터널링 산화막, 질화막, 블로킹 산화막의 두께를 각각 달리하여 ONO 박막을 제작하였다. 터널링 산화막 위에 LPCVD방법으로 질화막을 증착하는 동안 얇은 터널링 산화막이 질화되었으며, 질화막 위에 블로킹 산화막을 형성할 때, 산소가 질화막 표면을 산화시킬 뿐만 아니라 질화막을 지나 확산되었다. ONO 박막은 $SiO_2$(블로킹 산화막)/O-rich SiOxNy(계면)/N-rich iOxNy(질화막)/O-rich SiOxNy(터널링 산화막)으로 이루어졌다. SiON상은 주로 터널링 산화막과 질화막, 질화막과 블로킹 산화막 계면에 분포하였으며, $Si_2NO$상은 각 계면의 질화막 쪽과 터널링 산화막 내에 분포하였다.

• 한국재료학회지
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• 제29권10호
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• pp.609-616
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• 2019

Oxide coatings are formed on die-cast AZ91D Mg alloy through an environmentally friendly plasma electrolytic oxidation(PEO) process using an electrolytic solution of $NaAlO_2$, KOH, and KF. The effects of PEO condition with different duty cycles (10 %, 20 %, and 40 %) and frequencies(500 Hz, 1,000 Hz, and 2,000 Hz) on the crystal phase, composition, microstructure, and micro-hardness properties of the oxide coatings are investigated. The oxide coatings on die-cast AZ91D Mg alloy mainly consist of MgO and $MgAl_2O_4$ phases. The proportion of each crystalline phase depends on various electrical parameters, such as duty cycle and frequency. The surfaces of oxide coatings exhibit as craters of pancake-shaped oxide melting and solidification particles. The pore size and surface roughness of the oxide coating increase considerably with increase in the number of duty cycles, while the densification and thickness of oxide coatings increase progressively. Differences in the growth mechanism may be attributed to differences in oxide growth during PEO treatment that occur because the applied operating voltage is insufficient to reach breakdown voltage at higher frequencies. PEO treatment also results in the oxide coating having strong adhesion properties on the Mg alloy. The micro-hardness at the cross-section of oxide coatings is much higher not only compared to that on the surface but also compared to that of the conventional anodizing oxide coatings. The oxide coatings are found to improve the micro-hardness with the increase in the number of duty cycles, which suggests that various electrical parameters, such as duty cycle and frequency, are among the key factors controlling the structural and physical properties of the oxide coating.

• 한국결정성장학회지
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• 제27권5호
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• pp.243-248
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• 2017

본 연구에서는 산화주석(IV) 첨가량을 달리하여 동화유약 시편을 제조하고 발색기구를 분석하기 위하여 분광 분석, 결정상 분석, 미세구조 분석을 실시하여 색상과의 상관성을 분석하였다. 산화주석(VI) 첨가량이 증가함에 따라 동화유약의 붉은색은 사라지고 CIEab 값이 감소하여 무채색으로 발색하였다. 산화주석은 유약층에 고르게 분포하여 Cu nuclei가 성장하여 붉은색으로 발색하는 것을 방해하고 기포 주변의 metal Cu와 반응하여 합금을 형성하였다. 이로 인해 산화주석 첨가량이 증가함에 따라 금속 Cu 피크는 사라지고 미세한 $Cu_2O$ 피크만 남게 된다. 산화주석을 3.79 % 첨가하였을 때는 유약에 붉은색을 내는 $Cu_2O$보다 검정색을 나타내는 CuO와 Cassiterite $SnO_2$가 색상에 더 영향을 미치는 것으로 보여진다.

• 한국세라믹학회지
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• 제43권7호
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• pp.415-420
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• 2006

The residual stresses in the interface region of the Thermal Barrier Coating (TBC)/Thermally Grown Oxide (TGO)/Bond Coat (BC) were calculated on the TBC-coated superalloy samples using a Finite Element Method (FEM). It was found that the stress distribution of the interface boundary was dependent upon mainly the geometrical shape or its aspect ratio and the thickness of TGO layer, which was formed by growth and swelling behavior of oxide layer. Maximum compressive residual stress in the TBC/TGO interface is higher than that of the TGO/bond coat interface, and the tensile stress had nothing to do with change of an aspect ratio. The compressive residual stresses in the TBC/TGO and TGO/bond coat interface region increased gradually with the TGO growth.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.114-117
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• 2020

In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.