• 제목/요약/키워드: oxide electrode

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와이어전극의 도금재료가 W-EDM 가공성에 미치는 영향 (The Coating Materials of Electrode Materials on Machinability of W-EDM)

  • 김창호;허관도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 춘계학술대회 논문집
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    • pp.735-738
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    • 2000
  • The characteristics of wire electrical discharge machining (WEDM) are governed by many factors such as the power supply type, operating condition and electrode material. This work deals with the effect of wire electrode materials on the machining characteristics such as, metal removal rate, surface characteristics and surface roughness during WEDM A wire's thermal physical properties are melting point, electrical conductivity and vapor pressure. One of the desired qualities of wire is a low melting point and high vapor pressure to help expel the contaminants from the gap. They are determined by the mix of alloying elements (in the case of plain brass and coated wire) or the base core material(i.e. molybdenum). Experiments have been conducted regarding the choice of suitable wire electrode materials and influence of the properties of these materials on the machinability and surface characteristics in WEDM, the experimental results are presented and discussed from their metallurgical aspect. And the coating effect of various alloying elements(Au, Ag, Cu, Zn, Cr, Mn, etc.) to the Cu or 65-35 brass core on them was reviewed also. The removal rate of some coated wires are higher than that of 65-35 brass electrode wire because the wire is difficult to break due to the wire cooling effect of Zn evaporation latent heat and the Zn oxide on the surface is effective in preventing short circuit. The removal rate increases with increasing Zn content from 35, 40 and Zn coated wire

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An Overview of Self-Grown Nanostructured Electrode Materials in Electrochemical Supercapacitors

  • Shinde, Nanasaheb M.;Yun, Je Moon;Mane, Rajaram S.;Mathur, Sanjay;Kim, Kwang Ho
    • 한국세라믹학회지
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    • 제55권5호
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    • pp.407-418
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    • 2018
  • Increasing demand for portable and wireless electronic devices with high power and energy densities has inspired global research to investigate, in lieu of scarce rare-earth and expensive ruthenium oxide-like materials, abundant, cheap, easily producible, and chemically stable electrode materials. Several potential electrode materials, including carbon-based materials, metal oxides, metal chalcogenides, layered metal double hydroxides, metal nitrides, metal phosphides, and metal chlorides with above requirements, have been effectively and efficiently applied in electrochemical supercapacitor energy storage devices. The synthesis of self-grown, or in-situ, nanostructured electrode materials using chemical processes is well-known, wherein the base material itself produces the required phase of the product with a unique morphology, high surface area, and moderate electrical conductivity. This comprehensive review provides in-depth information on the use of self-grown electrode materials of different morphologies in electrochemical supercapacitor applications. The present limitations and future prospects, from an industrial application perspectives, of self-grown electrode materials in enhancing energy storage capacity are briefly elaborated.

Integrated Microdisk Gold Electrode Modified with Metal-porphyrin and Metal-phthalocyanines for Nitric Oxide Determination in Biological Media

  • Kim, Il-Kwang;Bae, Hyun-Ok;Oh, Gi-Soo;Chung, Hun-Taeg;Kim, Young-Jin;Chun, Hyun-Ja
    • Bulletin of the Korean Chemical Society
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    • 제24권11호
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    • pp.1579-1584
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    • 2003
  • An integrated gold microdisk electrode was constructed and modified with metal-porphyrin or metal-phthalocyanines for NO determination in biological media. Microanalysis of NO using square wave anodic stripping voltammetry in $1\;{\times}\;10^{-2}$ M $HClO_4$ was optimal when the accumulation potential was 0.1 V, frequency 100 Hz, and the scan rate was 200 mV/s. When the electrode was modified with metal-porphyrin or metal-phthalocyanines, the anodic peak currents of NO increased due to the catalytic oxidation of NO. In case of Fe(II)-phthalocyanine modified electrode, the peak currents remarkably increased and the sensitivity was high. The calibration curve had good linearity in the range from $3.6\;{\times}\;10^{-5}$ M to $7.2\;{\times}\;10^{-7}$ M, and the detection limit was $5.7\;{\times}\;10^{-7}$ M. For the structural stability and increased sensitivity, Fe(II)-phthalocyanine modified gold microdisk electrode coated with Nafion was applied to determination of NO released from cultured macrophase.

Effect of Transparency of CNT counter electrodes on the Efficiency of DSSCs

  • Lee, Won-Jae;Ramasamy, Easwaramoorthi;Lee, Dong-Yun;Song, Jae-Sung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.615-616
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    • 2005
  • Carbon Nanotubes (CNT) on flexible indium tin oxide (ITO) PET films were prepared for dye-sensitized solar cell (DSSC). These CNTs were prepared by spray coating method for various amount of light transparency. Also, Pt counter electrode was prepared by electro deposition method. All $TiO_2$ electrodes were deposited on ITO-PET films by spray coating method. Micro structural images show that CNT counter electrodes prepared by spray-coating have more dense structure with increasing spraying time (0 to 60 seconds). DSSC consisting of $TiO_2$ electrode and CNT counter electrode was fabricated with various amount of light absorption. DSSC have higher light energy conversion efficiency with increasing the thickness of CNT counter electrode. CNT counter electrode is at least compatible to that of CNT counter electrode.

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Cu2ZnSn(S,Se)4 (CZTSSe) 박막 태양전지 적용을 위한 마그네트론 스퍼터링으로 증착된 AZO/Ag/AZO 투명전극의 특성 (Characteristics of an AZO/Ag/AZO Transparent Conducting Electrode Fabricated by Magnetron Sputtering for Application in Cu2ZnSn(S,Se)4 (CZTSSe) Solar Cells)

  • 이동민;장준성;김지훈;이인재;이병훈;조은애;김진혁
    • 한국재료학회지
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    • 제30권6호
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    • pp.285-291
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    • 2020
  • Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu2ZnSn(S,Se)4 (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.5810-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

전해질 첨가제가 리튬 바나듐 옥사이드 전극의 성능에 미치는 영향 (Effect of Electrolyte Additive on the Electrochemical Characteristics of Lithium Vanadium Oxide Anode)

  • 이제남
    • 전기화학회지
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    • 제21권3호
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    • pp.55-60
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    • 2018
  • 최근 휴대용 기기의 급속한 발전이 이뤄지고, 다양한 전자제품에서 높은 성능의 이차 전지가 요구됨에 따라 고에너지밀도 특성을 가능케 하는 전극 재료의 연구가 주목받고 있다. 음극의 경우, 기존에 사용하고 있는 흑연재료를 대체하기 위하여 실리콘, 주석 등의 소재와 전이금속 산화물을 새로운 음극재료로 사용하려고 한다. 리튬 바나듐 옥사이드는 리튬 전이금속 산화물 기반의 음극 소재로서 흑연 대비 1.5배의 부피당 용량을 나타낼 수 있다는 장점을 가지고 있으나, 낮은 전기전도도와 입자 파쇄현상으로 인하여 전해질의 분해가 가속화되어 성능이 열화되는 문제점을 가지고 있다. 본 연구에서는 이러한 문제를 개선시키기 위하여 전해질 첨가제를 도입하여 전극/전해질 계면의 개질에 따른 리튬 바나듐 옥사이드의 전기화학적 거동 특성을 보고자 하였다.

Molecular Beam Epitaxial Growth of Oxide Single Crystal Films

  • Yoon, Dae-Ho;Yoshizawa, Masahito
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.508-508
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    • 1996
  • ;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

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단일벽 탄소나노튜브 상에 석출된 산화루테늄과 루테늄-코발트 혼합산화물의 수퍼커패시터 특성 (Supercapacitive Properties of RuO2 and Ru-Co Mixed Oxide Deposited on Single-Walled Carbon Nanotube)

  • 고장면;김광만
    • Korean Chemical Engineering Research
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    • 제47권1호
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    • pp.11-16
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    • 2009
  • 단일벽 탄소나노튜브의 표면 위에 동력학적 전위법으로 산화루테늄($RuO_2$)의 석출 및 루테늄-코발트 혼합산화물(Ru-Co mixed oxide)의 공석출에 의해 산화환원 수퍼커페시터용 복합전극을 제조하였다. 루테늄 성분이 13.13 wt%, 코발트 성분이 2.89 wt%가 석출된 Ru-Co 혼합산화물 전극은 낮은 전위 스캔속도($10\;mV\;s^{-1}$)에서는 $RuO_2$ 전극과 유사한 비용량(${\sim}620\;F\;g^{-1}$)을 나타내지만, 높은 스캔속도($500\;mV\;s^{-1}$)에서는 $RuO_2$ 전극보다 큰 비용량을 보인다. 높은 스캔 속도에서 Ru-Co 혼합산화물 전극이 비용량의 증가를 나타내는 것은 Ru 성분을 통한 전기전도성을 Co 성분이 구조적으로 지지해주기 때문이다.

산화물과 질산염으로 제조한 투명전극 타깃용 다성분계 IGZO 세라믹스 (Multicomponent IGZO Ceramics for Transparent Electrode Target Fabricated from Oxides and Nitrates)

  • 이현권;윤지혜;조경식
    • 한국분말재료학회지
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    • 제26권5호
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    • pp.375-382
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    • 2019
  • Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were $In_2O_3:Ga_2O_3:ZnO$ = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at $1200^{\circ}C$ results in the formation of $InGaZnO_4$, $InGaZn_3O_6$, and $InGaZn_5O_8$ phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at $1450^{\circ}C$ for 12 h. The $InGaZn_3O_6$ ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

루테늄 산화물-수계 전해액 수퍼캐패시터의 전위 특성 (Potential Characteristics of Supercapacitor Based on Ruthenium Oxide-Aqueous Electrolyte)

  • 도칠훈;최상진;문성인;윤문수;육경창;김상길;이주원
    • 전기화학회지
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    • 제6권2호
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    • pp.93-97
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    • 2003
  • [ $RuCI_3{\cdot}xH_2O$ ]로부터 제조한 비정질의 $RuO_2{\cdot}nH_2O$을 사용하여 탄탈륨 집전체상의 수퍼캐패시터 전극을 제조하였다. $RuO_2{\cdot}nH_2O$ 전극과 4.8 M 황산 전해액을 사용하여 $RuO_2$ 수퍼캐패시터를 제조하였다. 탄탈륨 박막은 0.0-1.1 V(vs.SCE)에서 안정적임을 AC impedance로 확인하고 수퍼캐패시터에 적용하였다. 루테늄 산화물 수퍼캐패시터는 약 1.0 V(vs. SCE)이상에서 비가역 가수분해 반응이 진행되었다 수퍼캐패시터를 0.5V(vs. SCE)의 protonation leve을 조정하고, 전압범위를 1V로 하여 충방전 시험할 경우 우수한 특성을 나타내었다. 이때 전극전위는 $-0.004\~0.995V(vs.SCE)$의 범위이고 positive 전극 및 negative 전극의 전위범위는 각각 $-0.004\~0.515V(vs.SCE)$$-0.515\~0.995V(vs.SCE)$이었다.