• Title/Summary/Keyword: oxide

Search Result 18,631, Processing Time 0.046 seconds

The Influences of Additives and Curing Temperature on the Expansion Pressure of Calcium Oxide Hydration (생석회의 팽창압 발현에 미치는 첨가제 및 양생온도의 영향)

  • Kim, Won-Ki;Soh, Jeong-Soeb;Kim, Hoon-Sang;Kim, Hong-Joo;Lee, Won-Jun;Shin, Jin-Ho
    • Journal of the Korean Ceramic Society
    • /
    • v.44 no.9
    • /
    • pp.529-535
    • /
    • 2007
  • Calcium oxide has been used as a demolition agent in fracturing rocks and old concrete structures, etc. With the agent, demolition work can be done in safety without a noise, vibration and any other pollution, since high expansive pressure is obtained gradually by only mixing the agents with water and pouring the slurry into boreholes. But application of the non-explosive demolition agent is a time-consuming job, especially in winter. Essentially, this problem is related to the reaction rate of calcium oxide with water. This study examines the influence of additives such as cement and anhydrite on expansion pressure of calcium oxide at different curing temperatures. The expansion pressure of calcium oxide began to increase steadily with the rise of the curing temperature. When mixing calcium oxide alone with water, blown-out shot occurred. But as additives were added to calcium oxide, the reaction of calcium oxide delayed and the expansion pressure showed gradual increment. Especially, anhydrite showed a superior delaying effect than cement on the reaction of calcium oxide.

투명 산화물 트랜지스터

  • Park, Sang-Hui;Hwang, Chi-Seon;Jo, Du-Hui;Yu, Min-Gi;Yun, Seong-Min;Jeong, U-Seok;Byeon, Chun-Won;Yang, Sin-Hyeok;Jo, Gyeong-Ik;Gwon, O-Sang;Park, Eun-Suk
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2009.05a
    • /
    • pp.13.1-13.1
    • /
    • 2009
  • Transparent electronics has attracted many interests, for it can open new applications for consumer electronics, transportation, business, and military. Among them, display backplane, thin film transistor (TFT) array would be the most attractive application. Many researchers have been investigating oxide semiconductors for transparent channel material of TFT since the report for transparent amorphous oxide semiconductor (TAOS) TFT by Hosono group and ZnO TFT by Wager group. Especially, oxide TFTs have been intensively investigated during a couple of years since the first demonstration of ZnO-TFT driving AM-OLED. Many papers regarding the fabrication and performance of oxide TFTs, and active matrix display driven by oxide TFTs have been reported. Now lots of people have confidence in the competitiveness of oxide TFTs for the backplane of AM-Display. Especially, high mobility, uniformity, fairly good stability, and low cost process make oxide TFTs applied even to a large size AM-OLED. Last year, Samsung mobile display, former SID, reported 12" AM-OLED driven by IZGO-TFT and it seems that the remained issue for the mass production is the bias temperature stability. Here, we will introduce the application of oxide TFT and important issue for oxide TFT to be used for the direct printing.

  • PDF

A Study on th Quality Stabilization of Iron Oxide (산화철의 품질 안정화)

  • 변태봉;한기현;김형석;배우현
    • Resources Recycling
    • /
    • v.7 no.4
    • /
    • pp.55-63
    • /
    • 1998
  • The main purpose of the present study is to reduce quality variation of iron oxide for soft ferrite produced at hydrochloric acid facility )HAF) in a cold rolled mill factory. We investigated the factor of iron oxide quality variation, the operating condition of hydrochloric acid facility and the iron oxide quality with the production lot. Based on this information, we liad developed proper working plan for the diminution of iron oxide quality variation. To reduce iron oxide quality variation, the first priority is to control the picking steels, which seriously affect iron oxide quality variation, and then to separate generated waste acid. theretore, it was possible to reduce iron oxide quality variation with the proper operation of various kinds of waste acid tanks. We could produce iron oxide below 20 ppm SiO$_{2}$ content variation by operation after separation waste acid generated at TCM line.

  • PDF

Adhesive Property of Novel Polyimides Containing Fluorine and Phosphine Oxide (Phosphine oxide와 불소를 함유하는 폴리이미드의 접착성 연구)

  • Jeong, K.U.;Myung, B.Y.;Cho, Y.J.;Choi, I.J.;Yoon, T.H.
    • Journal of Adhesion and Interface
    • /
    • v.1 no.1
    • /
    • pp.38-46
    • /
    • 2000
  • A novel diamine monomer, containing fluorine and phosphine oxide, bis(3-aminophenyl) 3,5-bis(trifluoromethyl) phenyl phosphine oxide (mDA6FPPO), was prepared via Grignard reaction, and utilized to prepare polyimides with dianhydrides such as PMDA, 6FDA, BTDA or ODPA, by the conventional two-step route; preparation of poly(amic acid), followed by solution imidization. The polyimides were characterized by FT-lR, NMR, DSC and DMA, with intrinsic viscosity, and adhesive properties were also evaluated. A phosphine oxide containing monomer, bis(3-aminophenyl) phenyl phosphine oxide (mDAPPO) a nd a commercial 3,3'-diamino diphenyl sulfone (mDDS) were also used for comparison. The polyimides with mDA6FPPO exhibited high $T_g$, excellent solubility, and good adhesive properties.

  • PDF

Chlorination of TRU/RE/SrOx in Oxide Spent Nuclear Fuel Using Ammonium Chloride as a Chlorinating Agent

  • Yoon, Dalsung;Paek, Seungwoo;Lee, Sang-Kwon;Lee, Ju Ho;Lee, Chang Hwa
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
    • /
    • v.20 no.2
    • /
    • pp.193-207
    • /
    • 2022
  • Thermodynamically, TRUOx, REOx, and SrOx can be chlorinated using ammonium chloride (NH4Cl) as a chlorinating agent, whereas uranium oxides (U3O8 and UO2) remain in the oxide form. In the preliminary experiments of this study, U3O8 and CeO2 are reacted separately with NH4Cl at 623 K in a sealed reactor. CeO2 is highly reactive with NH4Cl and becomes chlorinated into CeCl3. The chlorination yield ranges from 96% to 100%. By contrast, U3O8 remains as UO2 even after chlorination. We produced U/REOx- and U/SrOx-simulated fuels to understand the chlorination characteristics of the oxide compounds. Each simulated fuel is chlorinated with NH4Cl, and the products are dissolved in LiCl-KCl salt to separate the oxide compounds from the chloride salt. The oxide compounds precipitate at the bottom. The precipitate and salt phases are sampled and analyzed via X-ray diffraction, scanning electron microscope-energy dispersive spectroscopy, and inductively coupled plasma-optical emission spectroscopy. The analysis results indicate that REOx and SrOx can be easily chlorinated from the simulated fuels; however, only a few of U oxide phases is chlorinated, particularly from the U/SrOx-simulated fuels.

Study of the Reliability Characteristics of the ONON(oxide-nitride-oxide-nitride) Inter-Poly Dielectrics in the Flash EEPROM cells (플래시 EEPROM 셀에서 ONON(oxide-nitride-oxide-nitride) Inter-Poly 유전체막의 신뢰성 연구)

  • Shin, Bong-Jo;Park, Keun-Hyung
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.36D no.10
    • /
    • pp.17-22
    • /
    • 1999
  • In this paper, the results of the studies about a new proposal where the ONON(oxide-nitride-oxide-nitride) layer instead of the conventional ONO(oxide-nitride-oxide) layer is used as the IPD(inter-poly-dielectrics) layer to improve the data retention problem in the Flash EEPROM cell, have been discussed. For these studies, the stacked-gate Flash EEPROM cell with an about 10nm thick gate oxide and on ONO or ONON IPD layer have been fabricated. The measurement results have shown that the data retention characteristics of the devices with the ONO IPD layer are significantly degraded with an activation energy of 0.78 eV. which is much lower than the minimum value (1.0 eV) required for the Flash EEPROM cell. This is believed to be due to the partial or whole etching of the top oxide of the IPD layer during the cleaning process performed just prior to the dry oxidation process to grow the gate oxide of the peripheral MOSFET devices. Whereas the data retention characteristics of the devices with the ONON IPD layer have been found to be much (more than 50%) improved with an activation energy of 1.10 eV. This must be because the thin nitride layer on the top oxide layer in the ONON IPD layer protected the top oxide layer from being etched during the cleaning process.

  • PDF

Effect of graphene oxide on mechanical characteristics of polyurethane foam (산화그래핀이 폴리우레탄 폼 기계적 강도에 미치는 영향)

  • Kim, Jong-Min;Kim, Jeong-Hyeon;Choe, Young-Rak;Park, Sung Kyun;Park, Kang Hyun;Lee, Jae-Myung
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.40 no.6
    • /
    • pp.493-498
    • /
    • 2016
  • In the present study, graphene oxide based polyurethane foams were manufactured as a part of the development process of mechanically strengthened polyurethane foam insulation material. This material is used in a liquefied natural gas carrier cargo containment system. The temperature of the containment system is $-163^{\circ}C$. First, graphene oxide was synthesized using the Hummers' method, and it was supplemented into polyol-isocyanate reagent by considering a different amount of graphene oxide weight percent. Then, a bulk form of graphene-oxide-polyurethane foam was manufactured. In order to investigate the cell stability of the graphene-oxide-polyurethane foam, its microstructural morphology was observed, and the effect of graphene oxide on microstructure of the polyurethane foam was investigated. In addition, the compressive strength of graphene-oxide-polyurethane foam was measured at ambient and cryogenic temperatures. The cryogenic tests were conducted in a cryogenic chamber equipped with universal testing machine to investigate mechanical and failure characteristics of the graphene-oxide-polyurethane foam. The results revealed that the additions of graphene oxide enhanced the mechanical characteristics of polyurethane foam. However, cell stability and mechanical strength of graphene-oxide-polyurethane foam decreased as the weight percent of graphene oxide was increased.

Depolymerization of Kraft Lignin over a Ru-Mg-Al-oxide Catalyst (Ru-Mg-Al-oxide 촉매 상에서 크라프트 리그닌의 저분자화 연구)

  • Kim, Han Ung;Limarta, Susan Olivia;Jae, Jungho
    • Clean Technology
    • /
    • v.27 no.2
    • /
    • pp.190-197
    • /
    • 2021
  • Kraft lignin is a by-product of the pulp and paper industry, obtained as a black liquor after the extraction of cellulose from wood through the Kraft pulping process. Right now, kraft lignin is utilized as a low-grade boiler fuel to provide heat and power but can be converted into high-calorific biofuels or high-value chemicals once the efficient catalytic depolymerization process is developed. In this work, the multi-functional catalyst of Ru-Mg-Al-oxide, which contains hydrogenation metals, acid, and base sites for the effective depolymerization of kraft lignin are prepared, and its lignin depolymerization efficiency is evaluated. In order to understand the role of different active sites in the lignin depolymerization, the three different catalysts of MgO, Mg-Al-oxide, and Ru-Mg-Al-oxide were synthesized, and their lignin depolymerization activity was compared in terms of the yield and the average molecular weight of bio-oil, as well as the yield of phenolic monomers contained in the bio-oil. Among the catalysts tested, the Ru-Mg-Al-oxide catalyst exhibited the highest yield of bio-oil and phenolic monomers due to the synergy between active sites. Furthermore, in order to maximize the extent of lignin depolymerization over the Ru-Mg-Al-oxide, the effects of reaction conditions (i.e., temperature, time, and catalyst loading amount) on the lignin depolymerization were investigated. Overall, the highest bio-oil yield of 72% and the 3.5 times higher yield of phenolic monomers than that without a catalyst were successfully achieved at 350 ℃ and 10% catalyst loading after 4 h reaction time.

Characteristic of Graphene Oxide based Device Assembled by Dielectrophoresis (유전 영동을 통한 산화 그래핀 소자 특성)

  • Oh, Ju-Yeong;Jung, Young-Mo;Jun, Seong-Chan
    • Transactions of the Society of Information Storage Systems
    • /
    • v.8 no.2
    • /
    • pp.56-60
    • /
    • 2012
  • Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and positioning. We made graphene oxide based devices by dielectrophoresis, studied and controlled factors which can affect the characteristic of graphene oxide channel. Graphene oxide channel assembled by dielectrophoresis can be constructed differently by various frequency options. We confirmed the change of gate characteristics and I-V characteristics in the range from 80K to 300K temperature.

A study on c-axis preferred orientation at a various substrate temperature of ZnO thin film deposited by RF magnetron sputtering (RF magnetron sputtering법으로 ZnO박막 제조시 기판온도에 따른 c축 배향성에 관한 연구)

  • 이종덕;송준태
    • Electrical & Electronic Materials
    • /
    • v.9 no.2
    • /
    • pp.196-203
    • /
    • 1996
  • The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

  • PDF