• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.138-138
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• 2014

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.88-88
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• 2016

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.113-113
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• 2016

• The Journal of the Korean dental association
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• v.39 no.11 s.390
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• pp.936-946
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• 2001

• Molecules and Cells
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• v.19 no.1
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• pp.114-123
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• 2005

Nitropyrene, the predominant nitropolycyclic hydrocarbon found in diesel exhaust, is a mutagenic and tumorigenic environmental pollutant that requires metabolic activation via nitroreduction and ring oxidation. In order to determine the role of ring oxidation in the mutagenicity of 1-nitropyrene, its oxidative metabolites, 1-nitropyrene 4,5-oxide and 1-nitropyrene 9,10-oxide, were synthesized and their mutation spectra were determined in the coding region of hprt gene of CHO cells by a PCR amplification of reverse-transcribed hprt mRNA, followed by a DNA sequence analysis. A comparison of the two metabolites for mutation frequencies showed that 1-nitropyrene 9,10-oxide was 2-times higher than 1-nitropyrene 4,5-oxide. The mutation spectrum for 1-nitropyrene 4,5-oxide was base substitutions (33/49), one base deletions (11/49) and exon deletions (5/49). In the case of 1-nitropyrene 9,10-oxide, base substitutions (27/50), one base deletions (15/50), and exon deletions (8/50) were observed. Base substitutions were distributed randomly throughout the hprt gene. The majority of the base substitutions in mutant from 1-nitropyrene 4,5-oxide treated cells were $A{\rightarrow}G$ transition (15/33) and $G{\rightarrow}A$ transition (8/33). The predominant base substitution, $A{\rightarrow}G$ transition (11/27) and $G{\rightarrow}A$ transition (8/27), were also observed in mutant from 1-nitropyrene 9,10-oxide treated cells. The mutation at the site of adenine and guanine was consistent with the previous results, where the sites of DNA adduct formed by these compounds were predominant at the sites of purines. A comparison of the mutational patterns between 1-nitropyrene 4,5-oxide and 1-nitropyrene 9,10-oxide showed that there were no significant differences in the overall mutational spectrum. These results indicate that each oxidative metabolite exhibits an equal contribution to the mutagenicity of 1-nitropyrene, and ring oxidation of 1-nitropyrene is an important metabolic pathway to the formation of significant lethal DNA lesions.

• Journal of the Korean GEO-environmental Society
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• v.11 no.11
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• pp.63-75
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• 2010

There are several remediation technologies for heavy metal contaminated soils but increasing cost limits the application of the technology if the contaminated area is large. Therefore, stabilization, which blocks the release of heavy metals or makes slow the release, is one of the applicable technology for the heavy metal contaminated soil. Current study is an applicability test for a smelter area with various stabilizer such as magnetite, hematite, zeolite-A, zeolite-X, zeolite-Y, zinc oxide, calcium oxide, carbon trioxide, manganese oxide, manganese dioxide, fish bone, sodium phosphate. The soil contaminated with arsenic, lead, copper, nickel, and zinc could not be stabilized only one stabilizer which is known to have stability for certain metal. Many of the stabilizer works for a few metal but not all of the heavy metal. In several cases, stabilizers increase the release of the other metals while they stabilize some metals. In general, the stabilizing efficiency was increased with time. For Ni, Pb, calcium oxide, carbon trioxide, manganese oxide had good stabilizing effect in water extractable portion. For Cu, manganese oxide, zeolite showed good results especially in the exchangeable portion of the sequential extraction. For As, magnetite had good ability but most of the metal oxide which showed good result for other heavy metals increased with the release of As. Current study suggest that multiple stabilizers are needed for the contaminated soil and dose of the stabilizer and stabilizing time should be carefully considered for the soil contaminated with various metals.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.224-229
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• 2010

Transparent conductive oxide films have been widely used in the field of flat panel display (FPD). Transparent conductive Indium Zinc Oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for Indium Tin Oxide (ITO) films. In this study, using $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10 wt% as a target, IZO films are prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of thickness and $O_2$ introduction flow rate on the optical, electrical, structural properties and surface composition of deposited IZO films were investigated by UV/Visible spectrophotometer, 4-point probe method, SEM, XRD and XPS.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.260-266
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• 2009

The anodic oxidation behaviour of a cast component of AC2A Al alloy with machined surface and ascast surface was investigated in sulfuric acid solution. The anodized specimen showed relatively uniform and thick anodic oxide films on the as-cast surface, while non-uniform and very thin oxide films were formed on the machined surface. Non-anodized as-cast surface was observed to be covered with thick oxide scales and showed a number of second-phase particles containing Si, while non-anodized machined surface showed no oxide scales and relatively very small number of Si particles. Thus, the very limited growth of anodic oxide films on the as-cast surface was attributed to the presence of thick oxide scales and Si-containing second-phase particles on its surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.256-256
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• 2012

Oxide semiconductors such as zinc tin oxide (ZTO) or indium gallium zinc oxide (IGZO) have attracted a lot of research interest owing to their high potential for application as thin film transistors (TFTs) [1,2]. However, the instability of oxide TFTs remains as an obstacle to overcome for practical applications to electronic devices. Several studies have reported that the electrical characteristics of ZnO-based transistors are very sensitive to oxygen, hydrogen, and water [3,4,5]. To improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistor, back channel passivation layer is essential for the long term bias stability. In this study, we investigated the instability of amorphous indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) by the back channel contaminations. The effect of back channel contaminations (humidity or oxygen) on oxide transistor is of importance because it might affect the transistor performance. To remove this environmental condition, we performed vacuum seasoning before the deposition of hybrid passivation layer and acquired improved stability. It was found that vacuum seasoning can remove the back channel contamination if a-IGZO film. Therefore, to achieve highly stable oxide TFTs we suggest that adsorbed chemical gas molecules have to be eliminated from the back-channel prior to forming the passivation layers.

• Corrosion Science and Technology
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• v.14 no.3
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• pp.140-146
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• 2015

The commercialization of aluminum had been delayed than other metals because of its high oxygen affinity. Anodizing is a process in which oxide film is formed on the surface of a valve metal in an electrolyte solution by anodic oxidation reaction. Aluminum has thin oxide film on surface but the oxide film is inhomogeneous having a thickness only in the range of several nanometers. Anodizing process increases the thickness of the oxide film significantly. In this study, porous type oxide film was produced on the surface of aluminum in sulfuric acid as a function of electrolyte temperature, and the optimum condition were determined for anodizing film to exhibit excellent cavitation resistance in seawater environment. The result revealed that the oxide film formed at $10^{\circ}C$ represented the highest cavitation resistance, while the oxide film formed at $15^{\circ}C$ showed the lowest resistance to cavitation in spite of its high hardness.