• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4C
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• pp.380-387
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• 2002

In this paper, the effect of the phase noise of a local oscillator on the ACPR of a transmitter and the reception sensitivity of a receiver to meet the TIA/EIA/IS-98-D for the CDMA mobile station was analyzed. And the optimum condition for performance of the local oscillator was suggested. It was found that the phase noise level of the local oscillator in a receiver and a transmitter should be below -138.3dBc/Hz and -120dBc/Hz, respectively, at 900kHz offset. It was confirmed that the reception sensitivity and ACPR efficiency were satisfactory when the signal of the local oscillator to the down-converter of a receiver with the phase noise level of less than -138.3dBc/Hz is supplied to the up-converter of the transmitter.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.552-559
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• 2002

The EM(Engineering Model) LO(Local Oscillator) is designed for Ka-band satellite transponder. The VCO(Voltage Controlled Oscillator) is implemented using a high impedance inverter coupled with dielectric resonator to improve the phase noise performance out of the loop bandwidth. The phase of VCO is locked to that of a stable OCXO(Oven Controlled Crystal Oscillator) by using a SPD(Sampling Phase detector) to improve phase noise performance in the loop bandwidth. This LO exhibits the harmonic rejection characteristics above 43.83 dBc and requires 15 V and 160 mA. The phase noise characteristics are performed as -102.5 dBc/Hz at 10 KHz offset frequency and -104.0 dBc/Hz at 100 KHz offset frequency, respectively, with the output power of 13.50 dBm$\pm$0.33 dB over the temperature range of -20~+7$0^{\circ}C$.

• ETRI Journal
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• v.27 no.1
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• pp.75-80
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• 2005

This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a $0.8mm{\times}0.8mm$ die area.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.1
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• pp.34-40
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• 2004

The PLDRO(Phase-Locked Dielectric Resonator Oscillator) with low phase noise is designed for X-band. The phase of VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is locked to that of a high stable reference oscillator by using a SPD(Sampling Phase Detector) to improve phase noise performance in the loop bandwidth. And, the VCDRO is implemented using a high impedance inverter coupled with dielectric resonator to improve the phase noise performance out of the loop bandwidth. This PLDRO exhibits the harmonic rejection characteristics of 51.67㏈c and requires below 1.95W. The phase noise characteristics are performed as -107.17㏈c/Hz at 10KHz offset frequency and -113.0㏈c/Hz at 100KHz offset frequency, respectively, at ambient. And the output power of 13.0㏈m${\pm}$0.33㏈ is measured over the temperature range of $-20 ∼ +70^{\circ}C$ .

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.6
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• pp.539-545
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• 2016

In this paper, a novel coupled C type resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator. Oscillator using proposed shorted coupled C type resonator is designed, it has improved phase noise characteristics. At the fundamental frequency of 9.8GHz, 4.87dBm output power and -84.7 dBc@100kHz phase noise have been measured for oscillator with shorted coupled C type resonator. Next, we designed voltage controlled oscillator using proposed shorted coupled C type resonator with varactor diode. The VCO has 33.8MHz tuning range from 9.7807GHz to 9.8145GHz, and phase noise characteristic is -115~-112.5dBc/Hz@100KHz. Due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.6
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• pp.8-15
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• 2003

In this paper, the issue of the differential ring oscillator in designing low phase noise is linearity improvement of delay cell's load resistor. A novel differential delay cell that improves on the Maneatis load is proposed. The linearity improvement of load resistor results in lower phase noise in ring oscillator. For comparison of the phase noise characteristics, Ali Hajimiri's phase noise model is used. In order to have a low ISF(impulse sensitivity function), it is important to have a symmetry between rise time and fall time of oscillation waveform. The ISF value of ing oscillator based on the proposed delay cell is lower than that of the existing ring oscillators. Due to this result, the phase noise is improved by 2~3dBc/Hz for the same power dissipation and oscillation frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.5
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• pp.69-76
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• 2004

In this paper, a VCDRO (Voltage Control Dielectric Resonator Oscillator) with low phase noise for X-band application has been designed and fabricated. A low noise and low flicker noise MESFET and a high Q dielectric resonator were selected to obtain good phase noise Performance. Also, a varactor diode having high Q, qualify factor was used to reduce the loading effects and a big Gamma of diode was chosen for linearity of frequency over voltage tuning range. The fabricated circuits was simulated with circuit design tools, ADS to provide the optimum performances. As the measured results of fabricated oscillator, the output power was 5.8 ㏈m at center frequency 12.05㎓ and harmonic suppression -30㏈c, phase noise -114 ㏈c at 100 KHz offset frequency, respectively, and the frequency tuning range as the function of valtage applied to varactor diode was 15.2 MHz and its power variation with frequency was 0.2 ㏈. This oscillator could be available to a local oscillator in X-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.6
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• pp.816-824
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• 1999

Design and performance of 18 GHz phase locked dielectric resonator oscillator(PLDRO) for Point-to-point radio link using analog phase locked loop is described which achieve high stability and low SSB phase noise. The module consists of an 18 GHz voltage controlled dielectric resonator oscillator(VCDRO), buffered amplifier, analog phase detector which are integrated to form a miniature hybrid circuit. In addition, containing a low phase noise VHF PLL has been designed to lock any other conventional N times frequency of crystal oscillator. The module achieves stable phase locked state, exhibits output power of 21 dBm at 18.00 GHz, -34 dBc harmonic suppression and -75 dBc/Hz phase noise at 10 kHz offset frequency from carrier.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.6 no.1 s.12
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• pp.38-46
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• 2007

In this paper an X-band low phase noise HBT oscillator using a planar type MMIC resonator is designed. The chip area of the proposed resonator shows a quarter of the conventional hair-pin resonator using distributed transmission lines. The measurement results show oscillation frequency of 8.295 GHz, the power output of 4.8 dBm, and phase noise characteristic of -106.8 dBc/Hz and -121.7 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively.

• ETRI Journal
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• v.30 no.2
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• pp.344-346
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• 2008

In this paper, we present a novel oscillator (OSC) design. Bandpass filters, which can suppress harmonics, are incorporated into a co-design with an OSC to improve the OSC phase noise and harmonic rejection. The proposed OSC/bandpass filter co-design achieves a phase noise of -130.1 dBc/Hz/600 kHz and harmonic rejection of 37.94 dB and 40.85 dB for the second and third harmonics, respectively, as compared to results achieved by the OSC before co-design of -101.6 dBc/Hz/600 kHz and 21.28 dB and 19.68 dB. Good agreement between the measured and simulated results is achieved.