• Journal of Astronomy and Space Sciences
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• v.21 no.1
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• pp.29-38
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• 2004

A ultra low noise Q-band HEMT receiver for VLBI has been developed using a local oscillator with a very high phase stability. The performance of receiver was verified by comparison with receivers which were developed at the other countries. The receiver noise temperature shows 65 K in the frequency ragne from 42 ㎓ to 44 ㎓, less than 100 K from 39 ㎓ to 46 ㎓, respectively. A receiver noise temperature at SiO major line of 43㎓ which will be mainly observed by using this receiver has been optimized.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.9
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• pp.1028-1036
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• 2008

In the OFDM system, IQ imbalance problem happens at the RF front-end of transceiver, which degrades the BER(bit error rate) performance because it affects the constellation in the received signal. Also, phase noise is generated in the local oscillator of transceivers and it destroys the orthogonality between the subcarriers. Conventional PNS algorithm is effective for phase noise suppression, but it is not useful anymore when there are jointly IQ(In-phase and Quadrature) imbalance and phase noise. Therefore, in this paper, we analyze the effect of IQ imbalance and phase noise generated in the down-conversion of the receiver. Then, we estimate and compensate the IQ imbalance and phase noise at the same time. Compared with the conventional method that IQ imbalance after IFFT is estimated and compensated in front of FFT via the feedback, this proposed method extracts and compensates effect of IQ imbalance after FFT stage. In case IQ imbalance and phase noise exist at the same time, we can decrease complexity because it is needless to use elimination of IQ imbalance in time domain and training sequences and preambles. Also, this method shows that it reduces the ICI and CPE component using adaptive forgetting factor of MMSE after FFT.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.11
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• pp.1191-1197
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• 2003

In the multi-carrier OFDM communication system, the inter-carrier-interference(ICI) produced by phase noise in the transceiver local oscillator makes a severe influence on the system performance. In this paper, a new ICI self-cancellation scheme in the data-conversion type is proposed to reduce effectively the ICI. Also, the common phase error(CPE), ICI and carrier to interference power ratio(CIR) are found by the linear approximation of the phase noise. Then, the proposed method is compared with the conventional OFDM to analyze the efficiency of system performance improvement. When the number of subcarriers is 64, there are respectively the SNR gain of 0.6 ㏈ in the phase noise variance of 0.3 with QPSK and 1.5 ㏈ in the phase noise variance of 0.1 with 16 QAM at BER=10$\^$-3/. As a result, the performance degradation by ICI can be effectively lowered in the proposed system with ICI self. cancellation scheme, compared with the conventional OFDM system.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.841-844
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• 2005

Multi-output VC-TCXO (Voltage Controlled-Temperature Compensated Crystal Oscillator) for WCDMA has integrated the additional CMOS inverter, so it can be normal clipped sinewave output and additional CMOS output and it can be satisfied the VC-TCXO Characteristics that WCDMA system required. In this paper, however 26MHz is used for reference frequency, similarly and practically, it is usable from 10MHz to 40MHz, Most important factor to integrate CMOS inverter internally is the isolation between normal output and additional output. For this, it is separated in package design, due to this, when it isn't used additional output, it shows the same electrical performance, when it is used additional output, it has minimum-rized the interference. and then the important characteristics in reference oscillator are met to WCDMA system's requirements, like phase noise and frequency short term stability.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.485-487
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• 2006

This paper describes a frequency synthesizer designed in a $0.25{\mu}m$ CMOS technology for using local oscillators for the IF stages. The design is focused mainly on low-power characteristics. A simple ring-oscillator based VCO is used, where a single control signal can be used for variable resistors. The designed PLL includes all building blocks for elimination of external components, other than the crystal, and its operating frequency can be programmed by external data. It operates in the frequency range of 250MHz to 800MHz and consumes l.08mA at 500MHz from a 2.5V supply. The measured phase noise is -85dBc/Hz in-band and -105dBc/Hz at 1MHz offset. The die area is $1.09mm^2$

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.697-700
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• 1999

This Paper presents the design, fabrication, analysis of the measured date of a voltage controlled oscillator(VCO) for the application of Personal Communication Systems. Main VCO circuit consists of self biased emitter resonating circuit with microstrip line resonator on FR4 epoxy substrate. A varactor diode is used for 90MHz frequency tuning with center frequency of 1635MHz Phase noise of -114.67㏈C/Hz at 100KHz off set has been achieved with 3.3 V supply. The size of the fabricated VCO circuit is 1.25 cm$\times$ 1.25 cm.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.421-424
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• 2001

In this paper, We have designed and fabricated VCO in two way, the common source and common gate circuit for I local oscillator of 60 GHz wireless LAN system. The VCO employed a GaAs MESFET for negative resistance and a varactor diode for frequency tuning. The common gate VCO was measured the phase noise -112 dBc/Hz at the 1 MHz frequency offset. The output power and the second harmonic frequency suppression were 7.81 dBm and -29.3 dBc when tuning voltage was 3V, respectively. The total size of VCO was 28.6$\times$12.14 $\textrm{mm}^2$.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.100-103
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• 2003

A Ku-band Push-push VCO for low cost applications is proposed. The proposed push-push oscillator achieves a wide tuning range in Ku-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning range of 900MHz, fundamental suppression of -30dBc and good phase noise of -115dBc@1MHz offset.

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.202-207
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• 1997

Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.