• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.10
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• pp.1175-1180
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• 2014

In this paper, the open ring type DGS(Defected Ground Structure) resonator, applicable to MMIC(Monolithic Microwave Integrated Circuit), is proposed to improve phase noise characteristics of RF oscillator. This resonator is planar type, therefore, it easy to design miniaturrized., and takes relatively high Q value. Modeling the equivalent parameter of resonator is needed, when designing the RF oscillator with resonator. The mathematical method to solve the equivalent parameter of the resonator from the measured results of resonator is introduced in this paper. To verify the method, DGS resonator with 5.8 GHz center frequency is fabricated, for measuring characteristics and calculating the equivalent parameter. The result from this process is compared with the data of the ADS simulation, and as a result both were identical.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.12
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• pp.1236-1242
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• 2014

In this work, a D-band VCO(Voltage Controlled Oscillator) has been developed in a 65-nm CMOS technology. The circuit was designed based on push-push mechanism. The output oscillation frequency of the fabricated VCO varied from 152.7 GHz to 165.8 GHz, and the measured output power was from -17.3 dBm to -8.7 dBm. A phase noise of -90.9 dBc/Hz is achieved at 10 MHz offset. The chip size of the circuit is $470{\mu}m{\times}360{\mu}m$ including the probing pads.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.202-207
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• 2015

A CMOS relaxation oscillator, with high robustness over process, voltage and temperature (PVT) variations, is designed in $0.18{\mu}m$ CMOS. The proposed oscillator, consisting of full-differential charge-discharge timing circuit and switched-capacitor based voltage-to-current conversion, could be expanded to a simple open-loop frequency synthesizer (FS) with output frequency digitally tuned. Experimental results show that the proposed oscillator conducts subcarrier generation for frequency-modulated ultra-wideband (FM-UWB) transmitters with triangular amplitude distortion less than 1%, and achieves frequency deviation less than 8% under PVT and phase noise of -112 dBc/Hz at 1 MHz offset frequency. Under oscillation frequency of 10.5 MHz, the presented design has the relative FS error less than 2% for subcarrier generation and the power dissipation of 0.6 mW from a 1.8 V supply.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.304-308
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• 2003

A low cost solution employing harmonic oscillation to the frequency synthesizer at 5.8 GHz is proposed. The proposed frequency synthesizer is composed of 2.9GHz PLL chip, 2.9GHz oscillator, and 5.8GHz buffer amplifier. The measured data shows a frequency tuning range of 290MHz, ranging from 5.65 to 5.94GHz, about 0.5dBm of output power, and a phase noise of -107.67 dBc/Hz at the 100kHz offset frequency. All spurious signals including fundamental oscillation power (2.9GHz) are suppressed at least 15dBc than the desired second harmonic signal.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.5
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• pp.756-761
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• 2009

In this paper, a X band voltage controlled oscillator is proposed. The oscillator uses a transistor as an oscillating element and its oscillating frequencies are controlled by the tuning voltage of varactor diode. Using the circuit simulation tools, the matching circuits between the transistor and varactor diode, its input and output matching circuits, and a feedback circuits are designed. The measured results of the fabricated oscillator show that its oscillation frequencies are from 10.50GHz to 10.88GHz according to the turning voltages of 1V to 18V, its output power levels are about 4.3dBm, and its phase noise is around -43.5dBc/Hz at 100kHz offset frequency of 10.5GHz.

• Journal of Advanced Navigation Technology
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• v.12 no.2
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• pp.122-131
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• 2008

In this paper, an S-band oscillator of the low phase noise property using miniaturized microstrip hairpin shaped ring resonator has been designed and implemented. The TACONIC's RF-35 substrate has a dielectric constant ${\varepsilon}_r$=3.5 a thickness h=20mil a copper thickness t=17 um and loss tangent $tan{\delta}$=0.0025. The designed and implemented 2.45 GHz oscillator shows low phase performance of -100.5 dBc/Hz a 100kHz offset. Output power 20.9 dBm at center frequency 2.45 GHz and harmonic suppression -32 dBc. The circuit was implemented with hybrid technique. But can be fully compatible with the RFIC's, MIC and MMIC due to its entirely planar structure.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.2
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• pp.25-34
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• 2010

This paper proposed a high-speed voltage-controlled ring-oscillator(VCRO) using a frequency doubling technique. The design of the proposed oscillator has been based on TSMC 0.18um 1.8V CMOS technology. The frequency doubling technique is achieved by AND-OR operations with 4 signals which have $90^{\circ}$ phase difference one another in one cycle. The proposed technique has been implemented using a 4-stage differential oscillator compose of differential latched inverters and NAND gates for AND and OR operations. The differential ring-oscillator can generate 4 output signals, which are $90^{\circ}$ out-of-phase one another, with low phase noise. The ANP-OR operations needed in the proposed technique are implemented using NAND gates, which is more area-efficient and provides faster switching speed than using NOR gates. Simulation results show that the proposed, VCRO operates in the frequency range of 3.72 GHz to 8 GHz with power consumption of 4.7mW at 4GHz and phase noise of ~-86.79dBc/Hz at 1MHz offset. Therefore, the proposed oscillator demonstrates superior performance compared with previous high-speed voltage-controlled ring-oscillators and can be used to build high-performance frequency synthesizers and phase-locked loops for radio-frequency applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.219-226
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• 2007

In this paper, we report phase noise effects on SER(Symbol Error Rate) of MQAM(M-ary Quadrature Amplitude Modulation), DPSK(Differential Phase Shift Keying), OFDM(Orthogonal frequency Division Multiplex)-MQAM and OFDM-DPSK. SER of each modulation method has been quantified at the various offset frequencies of the local oscillator and compared with phase noise effects with the ideal cases, which have no phase noise, through the MATLAB simulation. And the ratio of modulation bandwidths to the SERs at the various frequency offsets for the above modulation methods have been analyzed for the system requirement of minimum phase noise characteristics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.669-676
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• 2012

In this paper, The method to improve the mass production method of the radar sensor is suggested by using the temperature compensation circuit which is composed with the thermister. The mass production became easier by decreasing the adjustment time for the exact oscillation frequency with the temperature compensation circuit that can support the proper gate bias voltage for the FET after the dielectric resonator is removed from the DRO(Dielectric Resonator Oscillator) of the radar sensor. Radar sensor with the proposed method has 15.67MHz oscillator frequency variation in the temperature range of $-20^{\circ}C-+55^{\circ}C$, 0.65dB magnitude variation, -105.47dBc phase noise characteristics at 1MHz which are better or similar temperature characteristics with the DRO whose oscillator frequency variation is 25MHz, magnitude variation is 0.42dB and phase noise is -107.40dBc in the same temperature range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.6-12
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• 2006

Recently, according to the rapid development of mobile system, the development of relative mobile components has been required, and especially, with the miniaturization of mobile component, the complex with nearby components has been progressed. In this paper, multi-output VC-TCXO (Voltage Controlled-Temperature Compensated Crystal Oscillator) for WCDMA integrates the additional CMOS inverter, so it can be the normal clipped sinewave output and additional CMOS output, and also it can be satisfied the VC-TCXO's requirements for WCDMA system. And the important characteristics of reference oscillator, like phase noise and frequency short term stability, are satisfied with WCDMA(UMTS) system's requirement In this paper, however, 25MHz is used for reference frequency, similarly and practically, we think that it can be used from 10MHz to 40MHz.