• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.61.1-61.1
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• 2010

$CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

• 전자공학회논문지T
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• 제36T권1호
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• pp.8-12
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• 1999

산소이온 펌핑효과를 나타내는 8% 이트리아가 함유된 ZrO\sub 2\ 이온 전도체를 기판으로 하여 그 위에 NO\sub x\가스에 대해 감지효과를 갖고 있는 것으로 알려져 있는 WO\sub 3\산화물 반도체를 사용하여 박막시편을 제작하였다. 각 소자의 NO\sub x\ 가스에 대한 전기적 특성과 열처리 온도에 따른 미세구조의 변화를 조사하였고, 특히 8YSZ 기판에 가해준 전압에 의한 NO\sub x\ 가스 감지의 증대효과를 조사하였다. 열처리 온도에 따른 WO\sub 3\ 박막표면의 SEM사진의 분석에서 열처리하지 않은 WO\sub 3\ 박막은 비결정질 상태이지만 600℃이상의 열처리 온도에서 결정화가 이루어졌고 사방경계상의 WO\sub 3\ 피크가 나타났으며 온도가 증가함에 따라 (111)면과 (001)면이 특히 많이 성장하였다. 측정온도 400℃에서 8YSZ 기판에 전압을 가하지 않았을 때보다 전압을 가하였을 경우가 더 안정되고 더 큰 응답을 보였으며, 특히 2V 일 때가 가장 높은 감도를 나타내었다. 그리고 NO\sub 2\ 가스보다 NO 가스에 대한 회복특성이 훨씬 우수했다.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.710-716
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• 2017

New white-light-emitting $SrSnO_3:Dy^{3+}$ phosphors were prepared using different concentrations of $Dy^{3+}$ ions via a solid-state reaction. The phase structure, luminescence, and morphological properties of the synthesized phosphors were investigated using X-ray diffraction analysis, fluorescence spectrophotometry, and scanning electron microscopy, respectively. All the synthesized phosphors crystallized in an orthorhombic phase with a major (020) diffraction peak, irrespective of the concentration of $Dy^{3+}$ ions. The excitation spectra were composed of a broad band centered at 298 nm, ascribed to the $O^2-Dy^{3+}$ charge transfer band and five weak bands in the range of 350~500 nm. The emission spectra of $SrSnO_3:Dy^{3+}$ phosphors consisted of three bands centered at 485, 577, and 665 nm, corresponding to the $^4F_{9/2}{\rightarrow}^6H_{15/2}$, $^4F_{9/2}{\rightarrow}^6H_{13/2}$, and $^4F_{9/2}{\rightarrow}^6H_{11/2}$ transitions of $Dy^{3+}$, respectively. As the $Dy^{3+}$ concentration increased from 1 to 15 mol%, the intensities of all the emission bands gradually increased, reached maxima at 15 mol% of $Dy^{3+}$ ions, and then decreased rapidly at 20 mol% due to concentration quenching. The critical distance between neighboring $Dy^{3+}$ ions for concentration quenching was calculated to be $9.4{\AA}$. The optimal white light emission by the $SrSnO_3:Dy^{3+}$ phosphors was obtained when the $Dy^{3+}$ concentration was 15 mol%.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.198-203
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• 2012

In this study, $[Li_{0.04}(Na_{0.5}K_{0.5})_{0.96}](Nb_{0.86}Ta_{0.10}Sb_{0.04})O_3+xSrO$ (x=0, 0.0025, 0.005, 0.0075) ceramics were synthesized by the conventional mixed oxide method. The X-ray diffraction patterns demonstrated that ceramics possessed single perovskite structure. The SEM images indicate that microstructure can be obviously affected by a small amount of added SrO. The phase transition temperature tetragonal-cubic($T_c$) and orthorhombic-tetragonal($T_{o-t}$) shifts downward and upward with the increase of Sr addition, respectively. The excellent piezoelectric properties of $d_{33}=170[pC/N]$, $k_p=0.37$, $Q_m=64.12$, $T_{o-t}=153^{\circ}C$ and $T_c=370^{\circ}C$ were obtained from the 0.25 mol% Sr added ceramics sintered at $1,120^{\circ}C$ for 1 h.

• Current Photovoltaic Research
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• 제8권1호
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• pp.33-38
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• 2020

Single-phased SnS thin films have been prepared by RF magnetron sputtering at various deposition pressures. The effect of deposition pressure on the structural and optical properties of polycrystalline SnS thin films was studied using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer. The XRD analysis revealed the orthorhombic structure of the SnS thin films oriented along the (111) plane direction. As the deposition pressure was increased from 5 mTorr to 15 mTorr, the intensity of the peak on the (111) plane increased, and the intensity decreased under the condition of 20 mTorr. The binding energy difference at the Sn 3d_5/2 and S 2p_3/2 core levels was about 324.5 eV, indicating that the SnS thin film was prepared as a pure Sn-S phase. The optical properties of the SnS thin films indicate the presence of direct allowed transitions with corresponding energy band gap in the rang 1.47-1.57 eV.

• Journal of Electrochemical Science and Technology
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• 제8권3호
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.66-69
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• 2000

본 연구에서는 STO(100) 기판 위에 PLD법으로 YBCO 박막을 제작할 때, YBCO 상과 outgrowth의 형성과정과 구조 등을 관찰하였다. 증착의 각 과정별로 박막의 표면 및 단면을 AFM과 SEM으로 관찰한 결과, YBCO 상은 작은 씨앗에서부터 계속 성장해 가며, YBCO 상은 구조를 약 한층 정도 형성하는 불과 10 ${AA}$ 정도만 증착되어도 YBCO의 XRD 피크를 보인다. 반면에 생성되며, YBCO처럼 작은 씨앗에서 서서히 성장해 가는 것은 아니라고 생각된다.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.355-359
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• 2013

In this paper, the $0.995(Li_{0.04}(Na_{0.56}K_{0.44})_{0.96}(Nb_{0.90}Ta_{0.10})_{0.998}Zn_{0.005}O_3+0.005KNbO_3+xwt%\;TeO_2$ lead-free piezoelectric ceramics for energy harvesting devices were fabricated by the conventional mixed oxide method. The microstructure, dielectric, and piezoelectric properties were investigated as a function of the $TeO_2$ addition. All the specimens showed an orthorhombic phase structure. At the composition ceramics doped with 0.1 wt%$TeO_2$, the optimum values of $d_{33}$= 212 pC/N, $d_{33}{\cdot}g_{33}=9.54pm^2/N$, and kp=0.448 were obtained, respectively. The results indicate that the composition ceramics is a promising candidate for energy harvesting devices applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.139-142
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• 2003

Microwave dielectric properties of $Ca(Li_{1/4}Nb_{3/4})O_3-CaTiO_3$ ceramic systems were investigated with calcination temperatures and amounts of $CaTiO_3$ in the range of 0.2 to 0.4mol. $Ca(Li_{1/4}Nb_{3/4})O_3$ ceramics having orthorhombic crystal structure could be synthesized at $750^{\circ}C$ and sintered well at $1250^{\circ}C$. They showed the dielectric constant of 26, quality factor($Q{\times}f_o$) of 13,000 and temperature coefficient of resonant frequency(${\tau}_f$) of $-49{\pm}2ppm/^{\circ}C$ With adding the $CaTiO_3$ amount the dielectric constant and ${\tau}_f$ increased due to the solute of $CaTiO_3$ but the quality factor decreased. The 0.7$Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$ ceramic showed the dielectric constant of 44, quality factor($Q{\times}f_o$) of 12,000 and ${\tau}_f$ of $-9{\pm}1ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.284-287
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• 2002

The $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%) were prepared by the conventional mixed oxide method. The sintering temperature and time were $1350^{\circ}C$, 3hr., respectively. The structural properties were investigated with sintering temperature by XRD. Also the microwave dielectric properties of the $BaTi_{4}O_{9}$ ceramics were studied. According to the X -ray diffraction patte구 of the $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), the orthorhombic $BaTi_{4}O_{9}$ structure was appeared. In the case of $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), dielectric constant $(\varepsilon_{r})$, quality factor$(Q{\times}f_r)$ and temperature coefficient of resonant frequency$(\tau_{f})$ were 40.8, 43,270 and $2.5ppm/^{\circ}C$, respectively.ࠀࠀ Ѐ耀
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