• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.488.2-488.2
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• 2014

Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.190.1-190.1
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• 2014

The interfacial electronic structure of a bilayer of chloroaluminum phthalocyanine (ClAlPc) and pentacene grown on indium tin oxide (ITO) has been studied using synchrotron radiation-excited photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the pentacene layer and the lowest unoccupied molecular orbital (LUMO) level of the ClAlPc layer (EDHOMO - EALUMO) was determined and compared with that of C60/pentacene bilayers. The EDHOMO - EALUMO of a heterojunction with ClAlPc was found to be 1.4 eV, while that with C60 was 1.0 eV. This difference is discussed in terms of the difference of the ionization energy of each acceptor materials. We also obtained the complete energy level diagrams of ClAlPc/pentacene/ITO and C60/pentacene/ITO, respectively.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• Ceramist
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• v.21 no.1
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• pp.24-43
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• 2018

Organic-inorganic halide perovskite materials have attracted significant attention during the last few years because of their superior properties for electronic and optoelectronic devices, such as their long charge carrier diffusion lengths and high photoluminescence quantum yields of up to 100% with tunable bandgaps over the entire visible spectral range. In addition to solar cells, light emitting diodes (LEDs) represent a fascinating application for halide perovskite materials. In this study, we review the recent progress in halide perovskite LEDs. The current strategies for improving the performance of halide LEDs, focusing on morphological engineering, dimensional engineering, compositional engineering, surface passivation, interfacial engineering, and the plasmonic effect are discussed. The challenges and perspectives for the future development of halide perovskite LEDs are also considered.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.160-161
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• 2011

본 연구에서는 대면적 유기태양전지 셀의 제작이 유리하며 공정비용이 저렴한 스프레이 공법을 이용하여 역구조 형태의 유기태양전지의 모든 공정에 적용하여 제작 및 평가했다. 스프레이 코팅 공정은 전자 수송층 ZnO층을 코팅 후 P3HT와 PCBM를 블렌딩 하여 만든 광활성층을 코팅하였다. 그리고 마지막으로 정공 전달층인 PEDOT:PSS층을 코팅한 후 메탈전극을 증착하여 역구조의 유기 태양전지을 제작하였다. 스프레이 코팅 공정으로 만든 유기태양전지는 현재 가장 많이 사용하고 있는 스핀 코팅 공정과 비교 시 유사한 특성을 나타내었다. 스프레이 공정으로 만든 유기 태양전지는 $0.38cm^2$의 면적에서 3.20%의 광변환 효율을 얻었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.317.1-317.1
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• 2013

유기 태양전지는 다른 무기계 태양전지에 비해 물질 자체의 쉬운 가공성과 유연한 특성으로 차세대 플렉시블 태양전지로 각광받고 있지만 상대적으로 짧은 수명으로 상용화에 걸림돌이 되고 있다. 현재까지 알려진 유기 태양전지의 짧은 수명의 원인으로는 수분과 산소에 의한 광활성층의 화학적 열화 및 표면의 변화, 전극의 열화, 전자-전공 수송층의 흡습현상 등이 있다 [1]. 본 연구에서는 이러한 이론적인 열화 메커니즘에 기초하여 일정한 수분과 산소 분위기에서 각 단위층들이 열화되는 현상을 광학적, 화학적 분석을 통해 짧은 수명의 원인을 밝혀내고자 한다. 유기 태양전지의 가혹시험은 $85^{\circ}C$의 온도와 85%의 습도 조건에서 이뤄졌으며, 가혹시간에 따른 열화현상 비교를 위해 0, 50, 100, 250, 500 h 동안 시험을 진행하였다. C-O, C=O 결합 형성에 의한 광활성층의 ${\pi}$공액의 변형은 FT-IR(fourier transform infrared spectroscopy)과 XRD (X-ray diffraction) 측정을 통해 분석하였고 변화된 표면 형상은 FE-SEM (field emission scanning electron microscopy) 측정을 통해 관찰하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.160-160
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• 2016

In this study, we applied the low temperature curing Ag paste to replace PVD System. The electrode formation of low temperature curing Ag paste for silicon Hetero-junction solar cells is important for improving device characteristics such as adhesion, contact resistance, fill factor and conversion efficiency. The low temperature curing Ag paste is composed various additives such as solvent, various organic materials, polymer, and binder. it depends on the curing temperature conditions. The adhesion of the low temperature curing Ag paste was decided by scratch test. The specific contact resistance was measured using the transmission line method. All of the Ag electrodes were experimented at various curing temperatures within the temperature range of $160^{\circ}C-240^{\circ}C$, at $20^{\circ}C$ intervals. The curing time was also changed by varying the conditions of 10-50min. In the optimum curing temperature $200^{\circ}C$ and for 20 min, the measured contact resistance is $19.61m{\Omega}cm^2$. Over temperature $240^{\circ}C$, confirmed bad contact characteristic. We obtained photovoltaic parameter of the industrial size such as Fill Factor (FF), current density (Jsc), open-circuit voltage (Voc) and convert efficiency of up to 76.2%, 38.1 mA/cm2, 646 mV and 18.3%, respectively.

• Bulletin of the Korean Chemical Society
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• v.32 no.spc8
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• pp.3081-3089
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• 2011

A series of new bis-thienylanthracene derivatives D1~D5 containing 9,10-antharcene moiety in the center and 2-methylenemalonotitrile or 2-cyanoacrylic acid functional group on the terminal thiophenes were synthesized and characterized by $^1H$-NMR and high-resolution mass spectroscopy. Their optical, electrochemical, and thermal properties were measured. They have absorption ${\lambda}_{max}$ in the range of 437~480 nm and max of $7.4{\times}10^3{\sim}2.0{\times}10^4M^{-1}cm^{-1}$. The substitution of 2-cyanoacrylic acid group allows greater value of ${\varepsilon}_{max}$ than that of 2-methylenemalonotitrile. TGA curves showed that D4 and D5 which have 2-cyanoacrylic acid functional group on the terminal thiophene(s) exhibit good thermal stability and D4 was thermally stable up to $400^{\circ}C$. Their optical properties and LUMO energy levels measured suggest that they can serve as potential candidates for electron donor materials of organic photovoltaic cells (OPVs) or D4 and D5 which contain 2-cyanoacrylic acid group can be used as organic dyes of dye-sensitized solar cells (DSSCs).

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.31-37
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• 2013

Lowering surface reflectance of Si wafers by texturization is one of the most important processes for improving the efficiency of Si solar cells. This paper presents the results on the effect of texturing using acidic solution mixtures containing the catalytic agents to moderate etching rates on the surface morphology of mc-Si wafer as well as on the performance parameters of solar cell. It was found that the treatment of contaminated crystalline silicon wafer with $HNO_3-H_2O_2-H_2O$ solution before the texturing helps the removal of organic contaminants due to its oxidizing properties and thereby allows the formation of nucleation centers for texturing. This treatment combined with the use of a catalytic agent such as phosphoric acid improved the effects of the texturing effects. This reduced the reflectance of the surface, thereby increased the short circuit current and the conversion efficiency of the solar cell. Employing this technique, we were able to fabricate mc-Si solar cell of 16.4% conversion efficiency with anti-reflective (AR) coating of silicon nitride film using plasma-enhanced chemical vapor deposition (PECVD) and Si wafers can be texturized in a short time.