• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.381-382
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• 2007

IZO/Ag/IZO (IAI) anode films for flexible organic light emitting diodes (OLEDs) were grown on PC (polycarbonate) substrate using DC sputter (IZO) and thermal evaporator (Ag) systems as a function of Ag thickness. To investigate electrical and optical properties of IAI stacked films, 4-point probe and UV/Vis spectrometer were used, respectively. From a IAI stacked film with 12nm-thick Ag, sheet resistance of $6.9\;{\Omega}/{\square}$ and transmittance of above 82 % at a range of 500-550 nm wavelength were obtained. In addition, structural and surface properties of IAI stacked films were analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscopy), respectively. Moreover, IAI stacked films showed dramatically improved mechanical properties when subjected to bending both as a function of number of cycles to a fixed radius. Finally, OLEDs fabricated on both flexible IAI stacked anode and conventional ITO/Glass were fabricated and, J-V-L characteristics of those OLEDs were compared by Keithley 2400.

• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.167-168
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• 2008

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely $Zn(HPB)_2$ and Zn(HPB)q, which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and $Zn(PQ)_2$. The fundamental structures of the white OLEDs were ITO / NPB (40 nm) / $Zn(HPB)_2$ (40 nm) / $Zn(PQ)_2$ (20 nm) / LiAl (120 nm). As a result, we obtained a maximum luminance of $4200cd/m^2$ at a current density of $440mA/cm^2$. The CIE (Commission International de l'Eclairage) coordinates are (0.319, 0.338) at an applied voltage of 10 V.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.2018-2019
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• 2007

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely $Zn(HPB)_2$ and Zn(HPB)q, which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO / NPB (40 nm) / $Zn(HPB)_2$ (40 nm) / Zn(HPB)q (20 nm) / LiAl (120nm). As a result, we obtained a maximum luminance of $15325cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE (Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.416-417
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• 2006

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely [2-(2-hydroxyphenyl)benzoxazole] ($Zn(HPB)_2$) and [(2-(2-hydroxyphenyl)benzoxazole)(8-hydoxyquinoline)] (Zn(HPB)q), which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO/PEDOT:PSS (23 nm)/NPB (40 nm)/$Zn(HPB)_2$ (40 nm)/Zn(HPB)q (20 nm)/$Alq_3$ (10 nm)/LiAl (120 nm). As a result, we obtained a maximum luminance of $15325\;cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE(Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.781-784
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• 2005

We have developed technology to fabricate large-size active matrix organic light-emitting diode (AMOLED) displays with good color purity. Using these innovations, we have developed a 40inch diagonal WXGA AMOLED full color display. Because the TFT circuitry occupies a large portion of the pixel structure, an efficient white emission OLED is essential to integrate the device onto the active matrix backplane. The development of these technologies enables OLED displays to fulfill the requirements for larger size applications such as HDTVs

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.899-901
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• 2009

The magnesium fluoride ($MgF_2$) has very higher optical transmission than oxide or nitride material applied for gas barrier, so we manufactured Mg-Zn-F films with Mg-Zn-F target mixed in the various ratio of $MgF_2$ to Zn and characterized films' properties. Zn is used to increase packing density of barrier film. Thickness and optical transmission of Mg-Zn-F are 200 nm and over 90 %, respectively. The result of water vapor transmission rate at 38, RH 90 ~ 100% of the Mg-Zn-F film deposited with 4 : 6 ($MgF_2$ : Zn) ratio target reached below $1{\times}10^{-3}g$/($m^2{\cdot}day$), measuring limit of instrument.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• Macromolecular Research
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• v.16 no.4
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• pp.337-344
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• 2008

The following series of blue EL polymers was synthesized using the Suzuki polymerization method: poly(3',6'-bis(3,7-dimethyloctyloxy)-9,9'-spirobifluorene-2,7-diyl) poly[$(OC_{10})_2$-spirobifluorene], poly{3',6'-bis(3,7-dimethyloctyloxy)-9,9'-2,7-diyl-co-4-(3,7-dimethyloctyloxy) phenyl-diphenylamine-4',4'-diyl} poly[$(OC_{10})_2$-spirobifluorene-TPA] (5:1, 9:1) and poly{3',6'-bis(3,7-dimethyloctyloxy)-9,9'-spirobifluorene-2,7-diyl-co-4-(6-((3-methyloxetan-3-yl)methoxy)hexyloxyphenyl-bisphenylamine-4',4'-diyl) poly[$(OC_{10})_2$-spirobifluorene-TPA-oxetane]. The weight average molecular weight (Mw) and polydispersity of the resulting polymers ranged from $1.6{\times}10^4-1.5{\times}10^5$ and 1.77-2.31, respectively. The resulting polymers were completely soluble in common organic solvents and were easily spin-coated onto an indium tin oxide (ITO) substrate. The polymers exhibited strong blue emission peaking at 450 nm. The maximum brightness and luminance efficiency were $9,960\;cd/m^2$ and 1.2 cd/A, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.3
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• pp.517-526
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• 2008

A one-chip DC-DC converter circuit for OLED(Organic Light-Emitting Diode) display module of automotive clusters is newly proposed. OLED panel driving voltage circuit, which is a charge-pump type, has improved characteristics in miniaturization, low cost and EMI(Electro-Magnetic Interference) compared with DC-DC converter of PWM(Pulse Width Modulator) type. By using bulk-potential biasing circuit, charge loss due to parasitic PNP BJT formed in charge pumping, is prevented. In addition, the current dissipation in start-up circuit of band-gap reference voltage generator is reduced by 42% and the layout area of ring oscillator is reduced by using a logic voltage VLP in ring oscillator circuit using VDD supply voltage. The driving current of VDD, OLED driving voltage, is over 40mA, which is required in OLED panels. The test chip is being manufactured using $0.25{\mu}m$ high-voltage process and the layout area is $477{\mu}m{\times}653{\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.290.2-290.2
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• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.