• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.3
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• pp.827-834
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• 2010

We have performed numerical simulations of the electrical characteristics for multi-layer organic light emitting diode devices with doped emitting layer using a commercial simulation program. In this paper, the basic structure consists of the ITO/NPB/$Alq_3$:C545T(%)/$Alq_3$/LiF/Al, four devices that were composed of $Alq_3$ as the host and C545T as the green dopant with different concentration, were studied. As the result, the variations of the doping concentration rate of C545T have a effect on the voltage-current density characteristics. The voltage-current characteristics are quite consistent with the results which were experimentally determined in a previous reference paper. In addition, the voltage-luminance characteristics were greatly improved, and the luminous efficiency was improved three times. In order to analyze these driving mechanism, we have investigated the distribution of electric field, charge density of the carriers, and recombination rates in the inner of the OLED devices.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.30-35
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• 2020

A microlens has been fabricated by various methods such as a thermal reflow, hot embossing, diamond milling, etc. However, these methods require a relatively complex process to control the microlens shape. In this work, we report on a simple and cost-effective method to fabricate a cylindrical microlens (CML), which can diffuse light widely. We have employed a slot-die head with the dual plate (a meniscus guide with a protruded μ-tip and a shim with a slit channel) for coating of a narrow stripe using poly(methyl methacrylate) (PMMA). We have shown that the higher the coating gap, the lower the maximum coating speed, which causes an increase in the stripe width and thickness. The coated PMMA stripe has the concave shape. To make it in the shape of a convex microlens, we have applied the thermal reflow method. When the stripe thickness is small, however, its effect is negligible. To increase the stripe thickness, we have increased the number of repeated coating. With this scheme, we have fabricated the CML with the width of 223 ㎛ and the thickness of 7.3 ㎛. Finally, we have demonstrated experimentally that the CML can diffuse light widely, a feature demanded for light extraction efficiency of organic light-emitting diodes (OLEDs) and suppression of moiré patterns in displays.

• Journal of Information Display
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• v.10 no.4
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• pp.137-142
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• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.382-384
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• 2009

In this study, high stable oxide thin-film transistors (TFTs) have been developed by using several approaching techniques, which including a change of the channel composition ratio in multi-component oxide semiconductors, a change of TFT structure with interfacial dielectric layers, a control of interface roughness, a channel-doping method, and so on.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1563-1565
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• 1997

Electroluminescence(EL)devices based on organic thin layers have attracted lot of interests because of their possible application as large-area light-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue lightemitting multilayer organic electroluminescence devices were fabricated using Poly (9-vinyl-carbazole) (PVK) and 2-(4'-tert-butylpheny])-5-(4"-bis-phenyl)1,3,4-oxadiazole (PBD) as hole trasport and electron transport material, respectively, where tris(8-hydroxyquinolinate) aluminum (Alq3) was used as a luminescenct material. A cell structure of glass substrate/indume-tin-oxide(ITO)/PVK/$Alq_3$/PBD/Mg:In was employed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.448-448
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

• 한국경영정보학회:학술대회논문집
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• 2008.06a
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• pp.585-589
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• 2008

LCD (Liquid Crystal Display)는 디지털 기기의 주요 구성 요소이며, 모든 크기의 FPD (Flat Panel Display) 시장에서 지배적인 시장점유율을 보인다. 그러나 많은 전문가들은 LCD 산업이 수년 내에 OLED (Organic Light Emitting Diodes), 3차원 디스플레이, 플렉서블 디스플레이와 같은 차세대 디스플레이 기술의 강력한 도전에 직면할 것이라고 예상한다. 이러한 경쟁환경에서 LCD 산업이 살아남기 위한 방안으로 본 연구에서는 LCD 산업의 경쟁력의 원천을 밝혀내고, 이를 극대화하는 전략적 방향을 제시한다. 이를 위해 먼저 LCD 산업구조와 가치사슬을 분석하여 LCD 산업의 경쟁력을 제고하기 위한 기본적인 전략적 대안을 개발한다. 이 단계에서 얻어진 통찰력을 바탕으로, 인과지도(causal loop diagram)와 시스템 다이나믹스 (system dynamics) 방법론을 활용하여 기존의 LCD 산업구조에서 판매량, 시장점유율 및 이익 등의 핵심 지표에 가장 큰 영향을 미치는 구조적 특징을 규명한다. 또한, 여기서의 다이나믹스 모형을 바탕으로, LCD 제조업자의 관점에서 프로세스 역량을 극대화할 수 있는 전략적 대안을 모색한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.119-122
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• 2008

In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.107-110
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• 2003

본 연구에서는 캐소드 방향으로 발광하는 Top emission 소자를 설계 제작하였다. 이를 위하여 반투명한 금속 박막을 제작하여 전기적 특성과 광학적 특성을 비교 평가하였다. 이를 바탕으로 제작한 Top emission 소자를 bottom emission 소자와 비교하였을 때 구동 전압은 다소 높았으며 색좌표 및 스펙트럼이 이동하였는데 이동 정도와 경향성은 파장에 따라 다르게 나타났다

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.692-696
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• 2005

In an attempt to fabricate all inclusive display systems we are presenting a study on several elements that would be used as building blocks for all-on-board integrated applications on stainless steel foils. These systems would include in the same substrate all or many of the components needed to drive a flat panel OLED display. We are reporting results on both digital and analog circuits on stainless steel foils. Shift registers running at speeds greater than 1.0MHz are shown as well as oscillators operating at over 40MHz. Pixel circuits for driving organic light emitting diodes are presented. The device technology of choice is that based on poly-silicon TFT technology as it has the potential of producing circuits with good performance and considerable cost savings over the established processes on quartz or glass substrates (amorphous Silicon a-Si:H or silicon on Insulator SOI).