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http://dx.doi.org/10.5762/KAIS.2010.11.3.827

Simulations of Electrical Characteristics of Multi-layer Organic Light Emitting Diode Devices with doped Emitting Layer  

Oh, Tae-Sik (Department of Information Display, Sun Moon University)
Lee, Young-Gu (R&D Promotion Team, Cheorwon Plasma Research Institute)
Publication Information
Journal of the Korea Academia-Industrial cooperation Society / v.11, no.3, 2010 , pp. 827-834 More about this Journal
Abstract
We have performed numerical simulations of the electrical characteristics for multi-layer organic light emitting diode devices with doped emitting layer using a commercial simulation program. In this paper, the basic structure consists of the ITO/NPB/$Alq_3$:C545T(%)/$Alq_3$/LiF/Al, four devices that were composed of $Alq_3$ as the host and C545T as the green dopant with different concentration, were studied. As the result, the variations of the doping concentration rate of C545T have a effect on the voltage-current density characteristics. The voltage-current characteristics are quite consistent with the results which were experimentally determined in a previous reference paper. In addition, the voltage-luminance characteristics were greatly improved, and the luminous efficiency was improved three times. In order to analyze these driving mechanism, we have investigated the distribution of electric field, charge density of the carriers, and recombination rates in the inner of the OLED devices.
Keywords
OLED; HOMO; LUMO; Guest-Host System; Dopant; Concentration Quenching;
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