• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.737-749
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• 2016

Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic $CsPbX_3$(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.801-806
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• 2003

In recent years, there has been large interest in the fabrication of the self organized nanoscale structures since not only their potential utilization in electronic, optoelectronic, and magnetic devices but also their fundamental interest such as uniformity and regularization. An attractive candidate of these materials is anodic porous alumina film(Al$_2$O$_3$) which is formed by the anodization of aluminum in an appropriate acid solution. In this study to fabricate the porous alumina film with very uniform and nearly parallel pores the anodization was carried out under constant voltage mode in 0.3M oxalic acid as an electrolyte. The hexagonally ordered arrays with a few $\mu\textrm{m}$ in size two-dimensional polycrystalline structure were obtained of which pore densities were 1.1${\times}$10$\^$10//$\textrm{cm}^2$.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1754-1756
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• 2000

Organic semiconductors based on fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. For the gate dielectric, polyamic acid was spin-coated and cured into polyimide at 350$^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was 50${\mu}m$ and 5mm. It was found that field effect mobility was 0.012$cm^{2}/Vs$, and on/off current ratio was $10^5$.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1376-1381
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• 2004

Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and optoelectronic devices based on quantum structures. $Chen^{(1)}$ developed ballistic diffusive equation(BDE) for alternatives of the Boltzmann equation that can be applied to the complex geometrical situation. In this study, a simulation code based on BDE is developed and applied to the 1-dimensional transient heat conduction across a thin film and transient 2-dimensional heat conduction across the film with heater. The obtained results are compared to the results of the $Chen^{(1)}$ and Yang and $Chen^{(1)}$. Finally, steady 2-dimensional heat conduction in the quantum dot superlattice are solved to obtain the equivalent thermal conductivity of the lattice and also compared with the experimental data from $Borca-Tasciuc^{(2)}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.12-19
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• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.586-589
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• 1999

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer far electronic and optoelectronic devices. In this study, $\alpha$ -sexithiophene($\alpha$-6T) thin films and various electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned fur measurements. Electrical characterization of the thin film transistor with various channel length were measured, and field effect mobility is calculated by formula.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1735-1743
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• 2018

Excitons are the most prominent features of the optical properties of monolayer transition-metal dichalcogenides(TMDC). In view of optoelectronics it is very important to understand the decay mechanisms of the excitons of these materials. Auger recombination of excitons are regarded as one of the dominant decay processes. In this paper the Auger constant of recombination is computed based on the approach proposed by Kavoulakis and Baym. We obtain both temperature dependent (from type A, A' processes) and temperature independent (from type B, B' processes) contributions, and a numerical estimate of theoretical result yields the value of constant in the order of $10^{-2}cm^2s^{-1}$, being consistent with existing experimental data. This implies that Auger decay processes severely limit the photoluminescence yield of TMDC-based optoelectronic devices.

• New & Renewable Energy
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• v.17 no.1
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• pp.1-6
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• 2021

Transparent conducting oxide (TCO) films have been widely used in optoelectronic devices, such as OLEDs, TFTs, and solar cells. However, thin films of indium tin oxide (ITO) have few disadvantages pertaining to process parameters such as substrate temperature and sputtering power. In this study, we investigated the requirements for using TCO films in silicon-based solar cells and the best alternative TCO materials to improve their efficiency. Moreover, we discussed the current status of high-efficiency solar cells using low-temperature TCO films such as indium zinc oxide and Zr-doped indium oxide.

• Advances in nano research
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• v.13 no.5
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• pp.427-435
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• 2022

Static stability behaviors of annular sandwich plates constructed from two layers of particle-reinforced nanocomposites have been investigated in the present article. The type of nanoscale particles has been considered to be graphene oxide powders (GOPs). The particles are assumed to have uniform and graded dispersions inside the matrix and the material properties have been defined according to Halpin-Tsai micromechanical model. The core layer is assumed to have honeycomb configuration. Annular plate has been formulated according to thin shell assumptions considering geometrical nonlinearities. After solving the governing equations via Galerkin's technique, it is showed that the post-buckling curves of annular sandwich plates rely on the core wall thickness, amount of GOP particles, sector radius, and thickness of layers.