• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.258-259
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• 2000

Quantum Well Disordering (QWD) has drawn a considerable attention in recent years$^{(1-3)}$ due to its wide applicability to optoelectronic devices. QWD allows modification of the shape of QW in selected regions, hence it modifies the subband energies in conduction and valance bands$^{(4)}$ . This leads to changes in optical properties such as band gap, absorption coefficient and refractive index. Thus such disordering in selected areas enables monolithic integration of various optoelectronic devices such as lasers, EA/EO modulators, waveguides and optical amplifiers. In this paper, we investigate the quantum well disordering effects on photoluminescence spectra by using experimental measurements and theoretical analysis$^{(5)}$ . (omitted)

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.68-68
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• 2000

In this paper a very brief review of historical development of optical science and technology in China is presented. More attention has been pain on Modem Optics, which developed since 1950s. The recent development of optical science and technology in following fields are introduced. 1. Optical engineering and instrumentation (tracking theodolites, high speed cameras, satellite laser ranging systems, satellite flying attitude control, cameras for remote sensing, astronomical optical instrument) 2. Applied optics (adaptive optics, optical metrology, infrared optics, optical processing, optical holography) 3. Laser science and technology (ultrashort pulse lasers, UV-X ray lasers, high power laser facilities and laser fusion, laser isotope separation) 4. Laser and nonlinear materials (rare earth elements doped laser glasses and crystals, tunable laser crystals, borate series and organic nonlinear crystals) 5. Optoelectronic science and technology (Optical communication, optical data storage, optical computing) The current situation and developing prospect of optical and optoelectronic industry in China are presented. Furthermore it points out that the optical industry could be developed vigorously only if products development capacity is enhanced and new products industrialization is heightened. The main research and education institutions in the optics field in China, as well as the Chinese Optical Society (COS) are introduced.

• Smart Structures and Systems
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• v.21 no.5
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• pp.637-652
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• 2018

This paper presents a comparative study of displacement measurement using four sensors that are being used in the field: they are a ring gauge, a laser Doppler vibrometer (LDV), a vision-based displacement measurement system (VDMS), and an optoelectronic displacement meter (ODM). The comparative study was carried out on a brand-new high-speed railroad bridge designed to produce displacements within a couple of millimeters under the loading of a high-speed train. The tests were carried out on a single-span steel plate girder bridge two times with different train loadings: KTX and HEMU. The measured displacement is compared as raw and further discussion was made on the measurement noise, peak displacement, and frequency response of four sensors. The comparisonsare summarized to show the pros and cons of the used sensors in measuring displacement at a typical high-speed railroad bridge.

• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.154-159
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• 2009

This paper describes two methods - stamp-to-stick bonding and microtransfer molding - to integrate microfluidic channel into an optoelectrofluidic device for in-channel microparticle manipulation. We have demonstrated the optoelectronic microparticle manipulation in the channel-integrated optoelectrofluidic device using a liquid crystal display. As injecting a liquid sample containing $15{\mu}m$-diameter polystyrene particles into the fabricated channel, trapping and transport of individual microparticles have been successfully demonstrated. This channel-integrated optoelectrofluidic device may be useful for several in-channel applications based on the optoelectrofluidics such as optoelectronic flow control, droplet-based protein assay and bead-based immunoassay.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.42-45
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• 2018

Photovoltaic and optoelectronic devices based on hybrid metal halide perovskites ($MAPbX_3$; $MA=CH_3NH_3{^+}$, $X=Cl^-$, $Br^-$, or $I^-$) are rapidly improving in power conversion efficiency. Also, during recent years, perovskite single crystals have emerged as promising materials for high-efficiency photovoltaic and optoelectronic devices because of their low defect density. Here we show that the light soaking effect of mixed halide perovskite ($MAPbBr_{3-x}I_x$) single crystals can be explained using photoluminescence, time-resolved photoluminescence, and Raman scattering measurements. Unlike Br-based single crystal, Br/I mixed single crystal show a strong light soaking effect under laser irradiation condition that was related to the existence of multiple phases.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.6-6
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• 2011

Graphene, a monlayer of carbon atoms arrange to form a 2-dimensional honeycomb lattice, exhibits enormous fascinating properties, such as a linear energy dispersion relation, a wide-range optical absorption, high thermal conductivity, and mechanical flexibility [1]. Because the unique material properties of graphene allow it to be a promising building block for the next generation electronic and optoelectronic devices, sometimes graphene-based devices have refereed to be a strong candidate to overcome the intrinsic limitations of conventional semiconductor-based technology [2,3]. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic materials properties and recent progress in applications of graphene and discuss future outlook of graphene-based electronic and optoelectronic devices.

• Journal of Powder Materials
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• v.24 no.2
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• pp.153-163
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• 2017

Transparent conducting electrodes (TCEs) are attracting considerable attention as an important component for emerging optoelectronic applications such as liquid crystal displays, touch panels, and solar cells owing to their attractive combination of low resistivity (<$10^{-3}{\Omega}cm$) and high transparency (>80%) in the visible region. The solution-based process has unique properties of an easy fabrication procedure, scalability, and low cost compared to the conventional vacuum-based process and may prove to be a useful process for fabricating TCEs for future optoelectronic applications demanding large scale and flexibility. In this paper, we focus on the introduction of a solution-based process for TCEs. In addition, we consider the powder materials used to fabricate solution-based TCEs and strategies to improve their transparent conducting properties.

• Polymer Science and Technology
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• v.21 no.6
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• pp.528-536
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• 2010

• ETRI Journal
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• v.26 no.1
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• pp.61-64
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• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.