• 제목/요약/키워드: opto-electrical device

검색결과 24건 처리시간 0.018초

Zinc phthalocyanine(ZnPc)/$C_(60)$ 소자를 이용한 유기 광소자의 광기전특성 (Photovoltaic Properties of Organic Solar Cell using Zinc phthalocyanine(ZnPc)/$C_{60}$ devices)

  • 이호식;허성우;이원재;신훈규;김태완;권영수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.1712-1714
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    • 2004
  • During the last 20 years organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerine($C_{60}$) as electron acceptor(A) with doped charge transport layers, $Alq_3$ as an electron transport or injection layer. We observed the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source.

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Rapid Thermal Annealing at the Temperature of 650℃ Ag Films on SiO2 Deposited STS Substrates

  • Kim, Moojin;Kim, Kyoung-Bo
    • Applied Science and Convergence Technology
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    • 제26권6호
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    • pp.208-213
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    • 2017
  • Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

이중 광 콜리메터와 바이메탈 엑추에이터를 이용한 가변 광감쇠기 (Variable Optical Attenuator Incorporating Dual Fiber Collimator and Bi-metal Actuator)

  • 김광택;김덕봉;고한준
    • 한국광학회지
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    • 제29권1호
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    • pp.28-31
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    • 2018
  • 본 논문에서는 이중 광 콜리메터 광학계와 바이메탈 엑추에이터를 이용한 가변 광감쇠기를 제안하고 구현하였다. 입력광섬유와 출력광섬유 사이의 광손실은 바이메탈에 부착된 반사거울의 기울어진 각으로 조절되어진다. 바이메탈은 열전소자(TEC)에 의해 가열되거나 냉각되며 이로 인해 구부림이나 펴짐으로 인하여 반사거울을 움직이게 한다. TEC에 가해지는 전기신호로 원하는 광감쇠량을 얻을 수 있다. 제작된 소자는 0.5 dB의 삽입손실, 0.2 dB의 편광의존성 손실 및 40 dB 이상의 가변변위를 보였다. 반응 시간은 약 5초였다.

3-D Hetero-Integration Technologies for Multifunctional Convergence Systems

  • 이강욱
    • 마이크로전자및패키징학회지
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    • 제22권2호
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    • pp.11-19
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    • 2015
  • Since CMOS device scaling has stalled, three-dimensional (3-D) integration allows extending Moore's law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. 3-D integration has many benefits such as increased multi-functionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, because it vertically stacks multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip. Anticipated applications start with memory, handheld devices, and high-performance computers and especially extend to multifunctional convengence systems such as cloud networking for internet of things, exascale computing for big data server, electrical vehicle system for future automotive, radioactivity safety system, energy harvesting system and, wireless implantable medical system by flexible heterogeneous integrations involving CMOS, MEMS, sensors and photonic circuits. However, heterogeneous integration of different functional devices has many technical challenges owing to various types of size, thickness, and substrate of different functional devices, because they were fabricated by different technologies. This paper describes new 3-D heterogeneous integration technologies of chip self-assembling stacking and 3-D heterogeneous opto-electronics integration, backside TSV fabrication developed by Tohoku University for multifunctional convergence systems. The paper introduce a high speed sensing, highly parallel processing image sensor system comprising a 3-D stacked image sensor with extremely fast signal sensing and processing speed and a 3-D stacked microprocessor with a self-test and self-repair function for autonomous driving assist fabricated by 3-D heterogeneous integration technologies.