• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1155-1161
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• 1998

We have studyed the surface electric resistiance for inner conductive film consisted of graphite and iron oxide by coating the conductive paint on inner face of 28" wide CRT funnel and have evaluated the working properties of 28" wide CRT according to the surface electric resistiance. We found that the viscosity of paint and the thickness of conductive film became the higher but the surface electric resistiance of con-ductive films was the lower than before in accordance with the increase of solid contents in conductive paint and that the surface condition and the surface electric resistiance of conductive films changed highly ac-cording to the drying conditions also. From these results we could get the uniform thickness and the un-iform film resistance and the optimum working property of selectric propertise in CRT when we used the conductive paint with solid contents 28% and viscosity about 13cps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.549-554
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• 2009

Al thin films were synthesized on TiN/Si substrate by MOCVD using N-methylpyrrolidine alane (MPA) precursor. Effects of substrate temperature, reaction pressure on the deposition rate, surface roughness and electrical resistivity were investigated. The early stage of Al thin film formation was analyzed by in-situ surface reflectivity measurement with a laser and photometer apparatus. From the Arrhenius plot of deposition rate vs. substrate temperature, it was found that the activation energy of surface reaction was 91.1kJ/mole, and the transition temperature from surface-reaction-limited region to mass-transfer-limited region was about $150^{\circ}C$. The growth rate increased with the reaction pressure, and average growth rates of $200{\sim}1,200nm/min$ were observed at various experimental conditions. Surface roughness of the film increased with the film thickness. The electrical resistivity of Al film was about $4{\mu}{\Omega}{\cdot}cm$ in the case of optimum condition, and it was close to the value of the bulk Al, $2.7{\mu}{\Omega}{\cdot}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.737-740
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500${\AA}$ and annealing condition(300$^{\circ}C$, 3 hr) in Ar-10 %N$_2$deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.455-460
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• 2005

Deposition of TiN$_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N$_{2}$ gas on the resistivity of TiN$_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO$_{2}$ wafer were used to explore the effect of substrate. The phase of TiN$_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN$_{x}$ film having lowest resistivity was discussed.

• Polymer(Korea)
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• v.36 no.5
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• pp.662-667
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• 2012

Poly(ethylene terephthalate) (PET) base films with high light transmittance have been used for the substrate of various functional films in the flat panel display. The effects of the reflective index of coated films, the roughness of the film surface and the content of inorganic silica particles on the light transmittance were studied in this article. Light transmittance was increased by coating a water soluble resin with a low reflective index at an optimum thickness. The roughness of the film did not affect light transmittance when the Ra of the film surface was less than a quarter of the wavelength of incident light. Inorganic silica particles decreased light transmittance due to their absorbance and scattering of the incident light.

• Design & Manufacturing
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• v.18 no.2
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• pp.41-50
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• 2024

In this study, experimental design methods were used to derive optimal process conditions for improving the thickness uniformity of a 0.40 mm, 3.5 inch light guide panel. Process mapping and expert group analysis were used to identify factors that influence the thickness of injection molded products. The key factors identified were mold temperature, mold temperature, injection speed, packing pressure, packing time, clamp force, and flash time. Considering the resin manufacturer's recommended process conditions and the process conditions for similar light guide plates, a three-level range was selected for the identified influencing factors. L27 orthogonal array process conditions were generated using the Taguchi method. Injection molding was performed using these L27 orthogonal array to mold the 3.5 inch light guide plates. Thickness measurements were then taken, and the results were analyzed using the signal-to-noise ratio to maximize the CpK value, leading to the determination of the optimal process conditions. The thickness uniformity of the product was analyzed by applying the derived optimum process conditions. The results showed a 97.5% improvement in the Cpk value of 3.22 compared to the process conditions used for similar light guide plates.

• Tribology and Lubricants
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• v.34 no.5
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• pp.169-174
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• 2018

A multi-stage compressor (MSC) is comprised of several impellers installed in the pinion gear shaft driven by a main bull gear. In the pinion shaft, a thrust collar (TC) is installed to support the thrust load. The TC makes the lubrication system simpler in the MSC; therefore, it is widely used in similar kinds of machinery. Typically, TCs are installed on both sides of the bull gear and pressure is developed in the lubricated area by creating a taper angle on the TC and bull gear surface. In the current study, we developed a numerical analysis model to evaluate the performance of the TC considering its design parameters. We sloved the Reynolds equation using the finite element method and applied the half Sommerfeld condition to consider cavitation. Based on the pressure calculated in the lubricated area, we calculated the power loss and minimum film thickness. In addition, we calculated stiffness and damping using perturbation method. We performed parametric studies using the developed model. The results of the analysis show that the maximum pressure presents in the center area of the TC and it increases with the taper angle. The area over which pressure is developed decreases with the taper angle. The results also show that there is an optimum taper angle providing minimum power loss and maximum film thickness. Additionally, the stiffness and damping decrease with the taper angle. As the applied load increases, the power loss increases and the minimum film thickness decreases. However, the stiffness and damping increase with the applied load.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.1-6
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• 2002

For an optimum device design of nano-scale SOI devices, this paper describes the short channel effects of multi-gate structures SOI MOSFETs such as double gate, triple gate and quadruple gate, as well as a new proposed Pi gate using computer simulation. The simulation has been performed with different channel doping concentrations, channel widths, silicon film thickness, and vertical gate extension depths of Pi gate. From the simulation results, it is found that Pi gate devices have a large margin in determination of doping concentrations, channel widths and film thickness comparing to double and triple gate devices because Pi gate devices offer a better short channel effects.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.11
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• pp.1251-1256
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• 2015

In this paper, the processing conditions of the amorphous silicon film growth were investigated the effect in forming the HSG-Si on the surface of the storage electrode. As a result, when the amorphous silicon film phosphorus concentration is greater than $5.5{\pm}0.1E19atoms/cm^3$, HSG-Si is not formed correctly and showed the concentration dependency of HSG formation. Also, the optimum condition of the phosphorus concentration for amorphous silicon and HSG thickness are $4.5E19atoms/cm^3$ and $450{\AA}$, respectively, because of the HSG thickness over the $500{\AA}$ create to bit failure according to a short of the electrodes and the electrode.