• Journal of the Korean Solar Energy Society
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• v.31 no.2
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• pp.82-88
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• 2011

The artificial increase in the solar intensity incident on solar cells using lenses or mirrors can allow solar cells to generate equivalent power with a lower cost. There are two types of concentration optics for solar energy conversion. One is to use mirrors, and the other is to use Fresnel lenses. The gains that can be achieved with a Fresnel lens or a parabolic mirror are compared. The result showed the gains are comparable and the two configurations were developed competitively. In application areas of Fresnel lenses as solar concentrators, several variations of design were devised and tested. Some PV systems still use commercially available flat Fresnel lenses as concentrators. A convex linear Fresnel lens to improve the concentration ratio and the efficiency is devised and flat linear Fresnel lens in thermal energy collection is utilized. In this study, we designed and optimized flat Fresnel lens and the 'light pipe' to develop 500X concentrated solar PV system. In the process, we compare the transmission efficiencies according to groove types. We performed rigorous ray tracing simulation of the flat Fresnel lenses. The computer aided simulation showed the 'grooves in case' has the better efficiency than that of 'grooves out case'. Based on the ray-trace results we designed and manufactured sample Fresnel lenses. The optical performance were measured and compared with ray-trace results. Finally, the optical efficiency was measured to be above 75%. All the design and manufacturing were performed based on that InGaP/InGaAs/Ge triple junction solar cell is used to convert the photon energy to electrical power. Field test will be made and analyzed in the near future.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.77-82
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• 2001

Error characteristics of a mirror loss measurement system using an exponential decay method were studied, with the two samples having about 200-ppm-loss and 30-ppm-loss, respectively. In order to minimize the decay signal deviation from an exponential curve due to cavity length fluctuation, a data average method was tried. The data average method significantly improved the exponential curve fitting error of the decay signal, so that for a 6 decay signal data average the loss measurement error was reduced by about 2.4 times for the 200-ppm-loss mirror and 1.3 times for the 30-ppm-loss mirror compared with a single shot measurement. Day-to-day mirror loss repeatability error for the two samples was investigated. The repeatability error was measured to be about 5% for the 200-ppm-loss mirror and about 26.4% for the 30-ppm-loss mirror. Low decay signal average effect and high repeatability error in the low loss mirror measurement were explained with non-uniform spatial loss distribution of the sample and contamination from the environment, in addition to the error sources of the mirror loss measurement system itself. The influence of cavity length fluctuation and cavity length measurement error on the mirror loss measurement system performance was theoretically calculated. It confirmed that the requirement for the cavity length parameters was not so strict in the mirror loss measurement system of several ppm resolution. ution.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.135-142
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• 2001

Recently, plastic optical fiber draws a lot of attention as a new transmission medium for local area network (LAN) and home network applications. As PMMA based GI-POF (Graded Index Plastic Optical Fiber) has very low loss at about 500 nm and 650 nm wavelengths, it is very important to have a compact ultra short optical pulse source at these wavelength windows. In this paper, we have investigated detailed characteristics of gain switched laser system by using a commercially available low cost RF devices and an InGaAlP Fabry Perot semiconductor laser operating at 650 nm wavelength. The shortest optical 'pulse obtained was 33 psec with 1 GHz repetition rate. Depending on the DC bias current and the modulation frequency, the FWHM and the pulse energy of the gain switched pulses show 33.3-82.8 psec and 0.97-9.69 pI respectively. Also, the spectral bandwidths for CW and gain switched operations are 0.44 nm and 1.50 nm. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers in addition to estimate properties of ultra fast optical components and electro-optic devices. vices.

• Korean Journal of Optics and Photonics
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• v.16 no.5
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• pp.446-449
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• 2005

In a directional coupler, the design process requires repeated calculation of the characteristics of every changed structure, because it is generally difficult to expect the extinction ratio to be optimized over the entire variation of design parameters. In this paper, we systematically simulated the extinction ratio as a function of the design parameters, and analyzed the general tendency of that characteristic. In other words, we could find the generalized extinction ratio curve if the separation distance is normalized by the waveguide width. Here, the extinction ratio is shown to be increased as the normalized frequency (v) and the ratio (d) of the separation distance over the waveguide width were increased. For various structures with same ratio d, all corresponding extinction ratio curves as a function of v coincide with each other. We showed the usefulness of the generalized extinction ratio curve by applying it to the design and the fabrication of 1310/l550 nm demultiplexer, as it was convenient to design a shorter directional coupler with targeted extinction ratio from this curve.

• Korean Journal of Optics and Photonics
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• v.16 no.5
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• pp.417-422
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• 2005

When an optical pulse propagates through the atmospheric channel, it is attenuated and spreaded by the atmospheric turbulence. This pulse broadening produces the intersymbol interference(ISI) between adjacent pulses. Therefore, adjacent pulses are overlapped, and the bit rates and the repeaterless transmission length are limited by the ISI. In this paper, the ISI as a function of the refractive index structure constant that presents the strength of atmospheric turbulence is found using the temporal momentum function, and is numerically analyzed fer the basic SONET transmission rates. The numerical results show that ISI is gradually increasing at the lower transmission rate than the OC-192(9.953 Gb/s) system and is slowly converging after rapid increasing at the higher transmission rate than the OC-768(39.813 Gb/s) system as the turbulence is stronger. Also, we know that accurate information transmission is possible to 10[km] at the OC-48(2.488 Gb/s) system under any atmospheric turbulence, but is impossible under the stronger turbulence than $10^{-14}[m^{-2/3}]$ at the 100 Gb/s system, $10^{-13}[m^{-2/3}]$ at the OC-768 system, and $10^{-12}[m^{-2/3}]$ at the OC-192 system, because the ISI is seriously induced.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.298-305
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• 2003

We have calculated the single mode yield of index-coupled (IC) DFB lasers above threshold for several kL, and facet reflectivity combinations, and investigated the correlation between those results and the single mode yield as a function of f number at the threshold. As a result, there is little correlation between the single mode yield above threshold and the single mode yield as a function of f number at the threshold. The single mode yields above threshold for kL of 0.8 and 1.25 is larger than those for kL, of 2 and 3 due to the spatial hole burning effect. Also, we have investigated the effect of the reflectivity of the AR facet on the single mode yield for AR-HR and AR-CL combinations. For AR-HR combinations, the single mode yield increases as the reflectivity of the AR facet decreases. However, for AR-CL combinations, the reflectivity of the AR facet for the largest single mode yield exists. In the single mode yield calculations for IC DFB lasers in this paper, the single mode yield for kL of 0.8 with AR(1％)-HR combination is largest above threshold.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.312-320
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• 2003

The basic mechanistic aspects of the interaction and practical considerations related to polymer ablation were briefly reviewed. Photochemical and photothermal effects, which highly depend on laser wavelength have close correlation with each other. In this study, multi-scanning laser ablation processing of polymer with a DPSS (Diode Pumped Solid State) 3rd harmonic Nd:YVO$_4$ laser (355 nm) was developed to fabricate a three-dimensional micro shape. Polymer fabrication using DPSSL has some advantages compared with the conventional polymer ablation process using KrF and ArF laser with 248 nm and 193 nm wavelength. These advantages include pumping efficiency and low maintenance cost. And this method also makes it possible to fabricate 2D patterns or 3D shapes rapidly and cheaply because CAD/CAM software and precision stages are used without complex projection mask techniques. Photomachinability of polymer is highly influenced by laser wavelength and by the polymer's own chemical structure. So the optical characteristics of polymers for a 355 nm laser source is investigated experimentally and theoretically. The photophysical and photochemical parameters such as laser fluence, focusing position, and ambient gas were considered to reduce the plume effect which re-deposits debris on the surface of substrate. These phenomena affect the surface roughness and even induce delamination around the ablation site. Thus, the process parameters were tuned to optimize for gaining precision surface shape and quality. This maskless direct photomachining technology using DPSSL could be expected to manufacture tile prototype of micro devices and molds for the laser-LIGA process.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.331-337
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• 2003

This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.343-348
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• 2003

Indium tin oxide (ITO) thin films (170 nm) were grown by DC magnetron sputtering deposition on Coming glass substrates without a post annealing. The electrical transport and optical properties of the films have been investigated as a function of deposition temperature $T_{s}$ (10$0^{\circ}C$$\leq$ $T_{s}$$\leq$35$0^{\circ}C$) and oxygen partial pressure $P_{o_{2}}$, (0 $P_{o_{2}}$ $\leq$ 10$^{-5}$ torr). Films were deposited from a high density (99% of theoretical density) ITO target (I $n_2$ $O_3$: Sn $O_2$= 90 wt% : 10 wt%) made of ITO nano powders. With an increase of $T_{s}$ the electrical resistivity p of ITO thin films was found to decrease, but the mobility $\mu$$_{H}$ was found to increase. The carrier density nu shows the maximum value of 6.6$\times$10$^{20}$ /㎤ at $T_{s}$ = 30$0^{\circ}C$. At fixed Is, with an increase of the oxygen partial pressure, $n_{H}$ and $\mu$$_{H}$ were found to decrease, but p was found to increase. The minimum resistivity and maximum mobility values of the ITO films were found to be 0.3 mΩ.cm and 39.3 $\textrm{cm}^2$/V.s, respectively. The visible transmittance of the ITO films was above 80%.. 80%..

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.669-673
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• 2003

We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.