• Current Optics and Photonics
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• v.6 no.2
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• pp.161-170
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• 2022

Three-dimensional (3D) geometric models are introduced to correct vignetting, and a downhill simplex search is applied to determine the coefficients of a 3D model used in digital microscopy. Vignetting is nonuniform illuminance with a geometric regularity on a two-dimensional (2D) image plane, which allows the illuminance distribution to be estimated using 3D models. The 3D models are defined using generalized polynomials and arbitrary coefficients. Because the 3D models are nonlinear, their coefficients are determined using a simplex search. The cost function of the simplex search is defined to minimize the error between the 3D model and the reference image of a standard white board. The conventional and proposed methods for correcting the vignetting are used in experiments on four inspection systems based on machine vision and microscopy. The methods are investigated using various performance indices, including the coefficient of determination, the mean absolute error, and the uniformity after correction. The proposed method is intuitive and shows performance similar to the conventional approach, using a smaller number of coefficients.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.47-50
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• 2021

Nanoimprint lithography (NIL) has revolutionized the fabrications of electronics, photonics, optical and biological devices. Among all the NIL processes, roll-to-roll nanoimprinting is regarded best for having the attributes of low cost, continuous, simple, and energy-efficient process for nanoscale device fabrication. However, large-area printing is limited by the master mold deformation. In this study, a finite element model (FEM) has been constructed to assess the deformation of the roll mold adhesively wrapped on the carbon fiber reinforced material (CFRP) base roll. This study also optimizes the deformations in the metallic roll mold with respect to nip-forces applied in the printing process of nano-fabrication on large scale. The numerical simulations were also conducted to evaluate the deflection in roll mold assembly due to gravity. The results have shown decreasing trend of the deformation with decreasing nip-force. Also, pressure uniformity of about 40% has been optimized by using the current numerical model along with an acceptable deflection value in the vertical axis due to gravity.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2873-2878
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• 2023

The purpose of this study is to perform radiation monitoring by acquiring gamma images and real-time optical images for ^99mTc vial source using charge couple device (CCD) cameras equipped with the proposed compact gamma camera. The compact gamma camera measures 86×65×78.5 mm³ and weighs 934 g. It is equipped with a metal 3D printed diverging collimator manufactured in a 45 field of view (FOV) to detect the location of the source. The circuit's system uses system-on-chip (SoC) and field-programmable-gate-array (FPGA) to establish a good connection between hardware and software. In detection modules, the photodetector (multi-pixel photon counters) is tiled at 8×8 to expand the activation area and improve sensitivity. The gadolinium aluminium gallium garnet (GAGG) measuring 0.5×0.5×3.5 mm³ was arranged in 38×38 arrays. Intrinsic and extrinsic performance tests such as energy spectrum, uniformity, and system sensitivity for other radioisotopes, and sensitivity evaluation at edges within FOV were conducted. The compact gamma camera can be mounted on unmanned equipment such as drones and robots that require miniaturization and light weight, so a wide range of applications in various fields are possible.

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2458-2473
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• 2024

The turbulent flow in reactor pressure vessel (RPV) of pressurized water reactor (PWR) is important for the flow rate distribution at core inlet. Thus, it is vital to study the turbulent flow phenomena in RPV. However, the complicated fluid channel consisted of inner structures of RPV will block or refract the laser sheet of particle image velocimetry (PIV). In this work, the matched index of refraction (MIR) of sodium iodide (NaI) solution and acrylic was applied to support optical path for flow field measurements by PIV in the 1/10th scaled-down RPV model. The experimental results show detailed velocity field at different locations inside the scaled-down RPV model. Some interesting phenomena are obtained, including the non-negligible counterflow at the corner of nozzle edge, the high downward flowing stream in downcomer, large vortices above vortex suppression plate in lower plenum. And the intensity of counterflow and the strength of vortices increase as inlet flow rate increasing. Finally, the case of asymmetry flow was also studied. The turbulent flow has different pattern compared with the case of symmetrical inlet flow rate, which may affect the uniformity of flow distribution at the core inlet.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.86-91
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• 2013

The optical properties of InAs quantum dots (QDs) grown on GaAs substrates grown by molecular beam epitaxy have been studied using photoluminescence (PL) and time-resolved PL measurements. InAs QDs were grown using an arsenic interruption growth (AIG) technique, in which the As flux was periodically interrupted by a closed As shutter during InAs QDs growth. In this study, the shutter of As source was periodically opened and closed for 1 (S1), 2 (S2), or 3 s (S3). For comparison, an InAs QD sample (S0) without As interruption was grown in a pure GaAs matrix for 20 s. The PL intensity of InAs QD samples grown by AIG technique is stronger than that of the reference sample (S0). While the PL peaks of S1 and S2 are redshifted compared to that of S0, the PL peak of S3 is blueshifted from that of S0. The increase of the PL intensity for the InAs QDs grown by AIG technique can be explained by the reduced InAs clusters, the increased QD density, the improved QD uniformity, and the improved aspect ratio (height/length). The redshift (blueshift) of the PL peak for S1 (S3) compared with that for S0 is attributed to the increase (decrease) in the QD average length compared to the average length of S0. The PL intensity, PL peak position, and PL decay time have been investigated as functions of temperature and emission wavelength. S2 shows no InAs clusters, the increased InAs QD density, the improved QD uniformity, and the improved QD aspect ratio. S2 also shows the strongest PL intensity and the longest PL decay time. These results indicate that the size (shape), density, and uniformity of InAs QDs can be controlled by using AIG technique. Therefore the emission wavelength and luminescence properties of InAs/GaAs QDs can also be controlled.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.199-204
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• 2000

In this study, the ZnS nanosized thin films that could be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their structural and optical properties were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). When the growth temperature was $75^{\circ}C$, the surface morphology and the grain size uniformity were the best. The energy band gaps of samples were determined from the optical transmittance valued, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS, demonstrating that the quantum size effect of SGT grown ZnS is remarkable. Photoluminescence (PL) peaks were observed at the positions corresponding to the lower energy than that to energy band gap, illustrating that the surface states were induced by the ultra-fineness of grains in ZnS films. Particularly, for the first time, it is reported for the SGT grown ZnS that the PL peaks were shifted depending on the grain size.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Journal of Korean Ophthalmic Optics Society
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• v.19 no.4
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• pp.471-477
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• 2014

Purpose: We have analyzed the transmittance distribution of the ocular lens using local transmittance microscope to investigate the optical homogeneity of the lens. Methods: The transmittance of the laser which is focused on the surface of the ocular lens was measured by using the photo-detector and lock-in amplifier and analyzed. Multi-coated, uncoated, and progressive lenses were analyzed. Results: In the measurement of the progressive lens and a physical stimulated lens, local transmittance microscopy analysis showed a high degree of match with the measurement results through the optical microscope. In addition, the average value of the transmittance is reduced and the standard deviation was increased in the presence of optical defects. In unstimulated lens, there are a large impact on transmittance whether the anti-reflective coating is presence or absence in both the local transmittance microscopy and general transmittance analysis. Conclusions: The distribution of the transmittance measured by local transmission microscopy were changed when the various stimulus is applied to the lenses. These analyzes by local transmission microscopy can be utilized as a way to evaluate or determine the uniformity of the coating film or lens.

• Journal of Korean Society of Environmental Engineers
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• v.34 no.7
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• pp.467-472
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• 2012

The aim of this study was to investigate the efficiency of optical panel (OP) on the growth rate of Chlorella vulgaris (C. vulgaris). The size of C. vulgaris (FC-16) was 3~$8{\mu}m$, having round in shape. The cells of C. vulgaris was cultured in the Jaworski's Medium with deionized water at $22^{\circ}C$ for 15 days. For this experiment, three light samples were prepared to evaluate the efficiency of OP on the growth rate of C. vulgaris; OP with LED (Light Emitting Diode) (Run 1), Fluorescent light (Run 2) and LED (Run 3). The specific growth rate of C. vulgaris for Run 1 was found to be 14 times and 5 times faster than Run 2 and Run 3, respectively. In addition, the average biomass of C. vulgaris for Run 1 was measured 11.79 g/L in 11 days. This means that the biomass for Run 1 was reached 30 times and 6.5 times higher than Run 2 and Run 3, respectively. This may be due to the fact the OP was increased the light uniformity and hindered the shading effects in photobioreactor. Therefore, the growth rate of biomass in photobioreactor with OP is compared better than the without OP used other photobioreactor.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.267-271
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• 2009

Multicomponent transparent conducting oxide films were deposited on glass substrates at 150 by dual magnetron sputtering of AZO and ITO targets. In the case of mixing a limited amount of ITO (10W), resistivity of TCO films was significantly increased compared to the AZO film; from $3.5{\times}10^{-3}$ to $9.7{\times}10^{-3}{\Omega}{\cdot}cm$. Deterioration of the electrical conductivity is attributed to the decreases in carrier concentration and Hall mobility. Improvement of the conductivity could be obtained for the films prepared with ITO powers larger than 40 W. The lowest resistivity ($\rho$) of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ was achieved when ITO power was 100 W. Effects of $H_2$ incorporation on the electrical and optical properties of AZO-ITO films were investigated in this work. Addition of small amount of hydrogen resulted in the increase of carrier concentration and the improvement of electrical conductivity. It is apparent that the roughness of AZO-ITO films decreases dramatically after the transition of microstructure from polycrystalline to amorphous phase, which gives practical advantages such as an excellent uniformity of surface and a high etching rate. AZO-ITO films grown at sputtering ambient with hydrogen gas are expected to be applicable to optoelectronic devices such as organic light emitting diodes and flexible displays due to their sufficient electrical and structural properties.