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http://dx.doi.org/10.5757/JKVS.2013.22.2.86

Optical Properties of InAs Quantum Dots Grown by Changing Arsenic Interruption Time  

Choi, Yoon Ho (Department of Physics, Kangwon National University)
Ryu, Mee-Yi (Department of Physics, Kangwon National University)
Jo, Byounggu (Division of Advanced Materials Engineering, Chonbuk National University)
Kim, Jin Soo (Division of Advanced Materials Engineering, Chonbuk National University)
Publication Information
Journal of the Korean Vacuum Society / v.22, no.2, 2013 , pp. 86-91 More about this Journal
Abstract
The optical properties of InAs quantum dots (QDs) grown on GaAs substrates grown by molecular beam epitaxy have been studied using photoluminescence (PL) and time-resolved PL measurements. InAs QDs were grown using an arsenic interruption growth (AIG) technique, in which the As flux was periodically interrupted by a closed As shutter during InAs QDs growth. In this study, the shutter of As source was periodically opened and closed for 1 (S1), 2 (S2), or 3 s (S3). For comparison, an InAs QD sample (S0) without As interruption was grown in a pure GaAs matrix for 20 s. The PL intensity of InAs QD samples grown by AIG technique is stronger than that of the reference sample (S0). While the PL peaks of S1 and S2 are redshifted compared to that of S0, the PL peak of S3 is blueshifted from that of S0. The increase of the PL intensity for the InAs QDs grown by AIG technique can be explained by the reduced InAs clusters, the increased QD density, the improved QD uniformity, and the improved aspect ratio (height/length). The redshift (blueshift) of the PL peak for S1 (S3) compared with that for S0 is attributed to the increase (decrease) in the QD average length compared to the average length of S0. The PL intensity, PL peak position, and PL decay time have been investigated as functions of temperature and emission wavelength. S2 shows no InAs clusters, the increased InAs QD density, the improved QD uniformity, and the improved QD aspect ratio. S2 also shows the strongest PL intensity and the longest PL decay time. These results indicate that the size (shape), density, and uniformity of InAs QDs can be controlled by using AIG technique. Therefore the emission wavelength and luminescence properties of InAs/GaAs QDs can also be controlled.
Keywords
InAs; Quantum dots; Photoluminescence; Time-resolved photoluminescence;
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