• Journal of the Optical Society of Korea
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• 제9권3호
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• pp.92-94
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• 2005

We present a novel method for three-dimensional optical memory and microchannel embedded in fused silica glass. Three-dimensional dot patterning with a femtosecond laser pulse and observation with optical microscope are performed. Dot patterns are created by use of a 0.42 N.A. objective to focus 100 fs laser pulses inside the material. We demonstrate data storage with $2{\mu}m$ dot pitch and $7{\mu}m$layer spacing $(36 Gbit/cm^3)$. A three-dimensional microchannel acting as microfluidic and microoptical components is directly fabricated inside a silica glass. The optical micrographs of the microchannel are obtained by a digital camera of a microscope.

• Journal of the Optical Society of Korea
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• 제15권1호
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• pp.9-14
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• 2011

In this study, the internal structure of an optical waveguide embedded in a flexible optical circuit board is observed with a confocal microscope. In order to increase the light reflection from an internal material interface with a very small index difference, and thus enhance the signal contrast, a theta microscopy scheme has been integrated into a conventional confocal microscope, and a high NA oil-immersion lens has been used. The interface reflectivity is increased from roughly 0.0015% to 0.025% by the proposed method, and the internal structure can thus be successfully measured.

• Journal of the Optical Society of Korea
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• 제17권1호
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• pp.38-43
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• 2013

In this study, we propose a simple and indirect method to determine the optical constants of Mo and ITO thin films in the extreme ultraviolet (EUV) wavelength region by using X-ray reflectometry (XRR) and Rutherford backscattering spectrometry (RBS). Mo and ITO films were deposited on silicon substrates by using an RF magnetron sputtering method. The density and the composition of the deposited films were evaluated from the XRR and RBS analysis, respectively and then the optical constants of the Mo and ITO films were determined by an indirect optical method. The results suggest that the indirect method by using the XRR and RBS analysis will be useful to search for suitable high absorbing EUVL mask material quickly.

• Bulletin of the Korean Chemical Society
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• 제26권5호
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• pp.841-844
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• 2005

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.145.2-145
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• 1998

• 한국재료학회지
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• 제22권10호
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.535-536
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• 2008

Multi-layered thin films of ZnS/$Na_3AlF_6$/ZnS/Cr were deposited on glass substrate by evaporation process. ZnS and $Na_3AlF_6$ were selected as high and low refractive index material, and additionally Cr was chosen as mid reflective layer respectively. The multi-layered thin films were prepared in terms of different optical thickness and different staking sequence and layers. The optical properties were systematically characterized with different optical thickness of $Na_3AlF_6$ especially $0.25\lambda$ and $0.5\lambda$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}$, the ZnS/$Na_3AlF_6$/ZnS/Cr multi-layered thin film shows purple colour range in $0.25\lambda$， bluish green in $0.5\lambda$, red purple in $0.75\lambda$, and purple in $1.0\lambda$ respectively.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.156-161
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• 2014

We have investigated the optical properties of plamonic waveguide with tapered structure based on InP material for photonic integrated circuit(PIC). The proposed plasmonic waveguide is covered with the Ag thin film to generate the plasmonic wave on metallic interface. The optical characteristics of plasmonic waveguide were calculated using the three-dimensional finite-difference time-domain method. The plasmonic waveguide was fabricated with the lengths of 2 to $10{\mu}m$ and the widths of 400 to 700 nm, respectively. The plasmonic mode and optical loss were measured. The optimum plasmonic length is $10{\mu}m$ and widths are 600 and 700 nm in the fabricated waveguide. This plasmonic waveguide can be directly integrated with other conventional optical devices and can be essential building blocks of PIC.

• 한국세라믹학회지
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• 제53권4호
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• pp.381-385
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• 2016

Recently, white LEDs, especially, warm white LEDs have been intensively investigated due to outstanding optical properties, long term stability and low power consumption. In this study, mixed type and patterned type of remote phosphors were prepared by screen printing process employing green and red phosphor. Each type of remote phosphor exhibited distinctive photoluminescence spectrum. For example, the mixed type of remote phosphor exhibited unique spectrum, while the patterned type showed expectable spectrum depending on the concentration of phosphors. This indicates that a small amount of red phosphor dramatically reduced the green photoluminescence in the case of mixed-type remote phosphor, whereas the effect was negligible in the patterned-type remote phosphor. The possibility of undesirable chemical reaction was further investigated by using scanning electron microscopy and X-ray diffraction.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.42-47
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• 2017

In this study, the physical and optical properties of $ZnS:Mn^{2+}$ Quantum Dot prepared by wet-process condition with Mn/Zn ratio was valuated. The powder characteristics and optical behavior were investigated through XRD, TEM and Photo spectrometer exicted by various UV light source. We found the main peak of ZnS (111) was shifted by 0.8 degree to low angle position with increasing stirring energy from 200 RPM to 600 RPM, which is thought to be the increase of lattice defects during wet process. The photo luminescence at 600 RPM shows also higher blue intensity which is well correlated with XRD results. With increasing Mn/Zn ratio, the PL intensity become higher and shifed by 8.5nm to right side, by the increment of substitutional $Mn^{2+}$ ions.