• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1104-1108
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• 2004

A Study has been made of surface modification of various polymers by ion implantation to change the optical transmittance property at ultraviolet ray (UV, $200\sim400nm$). The substrates were PC (Polycarbonate), PET(Polyethyleneteraphtalate) and PP (Polypropylene). The effects of ion implantation on the change of optical transmittance were investigated in relation to ion species, implantation energies and ion fluences. The N, Ar, Kr, Xe ion implantation performed at ion energies from 20 to 50keV. The fluences ranged from $5\times10^{15}$ to $7\times10^{16}ions/cm^2$. UV/Vis transmittance spectroscopy, FT-IR and XPS were used to investigate optical transmittance, chemical structure and surface chemical state of irradiated polymer. Surface color was changed from the yellow to the dark brown and the transmittance of UV ray in the range UV-A($320\sim400nm$) decreased more than 80% after ion implantation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.162-162
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• 2010

In this study, optical analysis for 100W LED safety street lighting was conducted. Experimental research on such single LED was the first undertaken. simulation modeling based on optical properties of single LED has compared single LED product also designed 100W simulation modeling has compared average road illuminance with Korean Industrial Standards for LED safety street lighting(KS C7658:2009). 100W safety street lighting (model: CE180-ST-OS) designed by simulation has been also compared between product and 100W simulation modeling, and error rates have showed average 5.6[%]. Designed 100W LED safety street lighting base on simulation modeling was proven by comparison experiments. Through the simulations and the corresponding analysis, it was found that the tested 100W LED safety street lamp had reasonable performance. Design method for LED safety Street lamps have been summarized, based on the optical analysis.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.641-645
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• 2013

Chalcogenide glass has superior property of optical transmittance in the infrared region. Glass made using Ge-Se how many important optical applications. We have determined the composite formular of $Ge_{0.25}Se_{0.75}$ to be the GeSe chalcogenide glass composition appropriate for IR lenses. Also, the optical, thermal and physical characteristics of chalcogenide glass depended on the composition ratio. GeSe bulk sample is produced using the traditional melt-quenching method. The optical, structural, thermal and physical properties of the compound were measured by using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), and Scanning electron microscope (SEM) respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1985년도 추계학술대회 논문집
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• pp.21-23
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• 1985

By adding La$_2$O$_3$ to optical multicomponent glass composition, after making mother glass and core fiber that enable to enlarge the infrared transmittance region, then surveyed the optical properties. Through thermal analysis of the glass abstained by melt-quenching after selecting stable basic composition on devitrification and replace SiO$_2$ by 4-12wt% La$_2$O$_3$. As La$_2$O$_3$ increases up to l2wt% transition temperature, refractive index, density, deformation temperature increased, whereas thermal expansion coefficient decreased. As a result of inspectig transmittance in UV/VIS/IR region, visable region indicated the decrease of transmittance by increasing the La$_2$O$_3$ and transmittance region was enlarged by increasing the La$_2$O$_3$ in IR region. Also, fabricate core fiber at 820$^{\circ}C$ and severy the optical loss we could fact that La$_2$O$_3$ composition added 12wt% showed the minimum optical loss.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집
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• pp.3-7
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• 2004

$HgGa_2S_4:CO^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. 1n the optical absorption spectrum of the $HgGa_2S_4:CO^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.760-765
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• 2009

The effects of $Fe_2O_3$ addition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\gamma}$ (secondary electron emission coefficient) than pure MgO protective layer. Roughness increased with amount of $Fe_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as roughness. Good optical and electrical properties of ${\gamma}$ of 0.120, surface roughness of 14.1 nm and optical transmittance of 94.55% were obtained for the MgO + 100 ppm $Fe_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.579-583
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• 2003

HgGa$_2$S$_4$: Co$^{2＋}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the HgGa$_2$S$_4$: Co$^{2＋}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absolution peaks are assigned to be due to the electronic transitions between the split energy levels of Co$^{2＋}$ sited in the S$_4$ symmetry point.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in 300$^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying NH$_3$ gas flow rate. As NH$_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES(optical emission spectroscopy). N-H bonding(3390cm$\^$-1/) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in SiH$_4$