• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 1995.05a
• /
• pp.171-175
• /
• 1995

Semiconductor diode lasers that can generate one watt or more of optical energy for tens of milliseconds (quasi continuous wave) are now readily available. Several researchers have demonstrated that this power level, when properly coupled, can reliably initiate pyrotechnic mixtures. This means that the initiator containing the pyrotechnic can be protected against inadvertent initiation from electromagnetic radiation or electrostatic discharge by a conducting Faraday cage surrounding the explosive. Only a small dielectric window penetrates the housing of the initiator, thereby eliminating the conductors necessitated by a bridgewire electroexplosive device. The diode laser itself, however, functions at a low voltage (typically 3 volts) and hence is susceptible to inadvertent function from power supply short circuits, electrostatic discharge or induced RF energy. The rocket motor arm-fire device de-scribed in this paper uses a diode laser, but protects it from unintentional function with a Radio Frequency Attenuating Coupler (RFAC).The RFAC, invented by ML Aviation, a UK company, transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit and the pyrotechnic from all electromagnetic and electrostatic hazards. The first production application of a diode laser and RFAC device was by the Korean Agency for Defense Development.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.105-105
• /
• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Korean Journal of Materials Research
• /
• v.28 no.4
• /
• pp.254-259
• /
• 2018

General D-glass(Dielectric glass) fibers are adaptable to PCBs(Printed circuit boards) because they have a low dielectric constant of about 3.5~4.5. However, very few papers have appeared on the physical characteristics of D-glass fibers. D-glass fibers were fabricated via continuous spinning process using bulk D-glass. In order to fabricate the D-glass, raw materials were put into a Pt crucible, melted at $1650^{\circ}C$ for 2 hrs, and then annealed at $521{\pm}10^{\circ}C$ for 2 hrs. We obtained transparent clear glass. The transmittance and adaptable temperature for spinning of the bulk marble glass were characterized using a UV-visible spectrometer and a viscometer. Continuous spinning was carried out using direct melting spinning equipment as a function of the fiberizing temperature in the range of $1368^{\circ}C$ to $1460^{\circ}C$, while the winder speed was between 100 rpm and 200 rpm. We investigated the physical properties of the D-glass fibers. The average diameters of the glass fibers were measured by optical microscope and FE-SEM. The average diameters of the D-glass fibers were 21.36 um at 100 rpm and 34.06 um at 200 rpm. The mechanical properties of the fibers were confirmed using a UTM(Universal materials testing machine). The average tensile strengths of the D-glass fibers were 467.03 MPa at 100 rpm and 522.60 MPa at 200 rpm.

• Applied Microscopy
• /
• v.47 no.3
• /
• pp.131-147
• /
• 2017

In this work further optical and electrical investigations of pure and Zr doped $Mn_3O_4$ (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ${\omega}_p$, the relaxation time ${\tau}$ and the dielectric constant ${\varepsilon}_{\infty}$. Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form $Mn_2O_3$ ones at $350^{\circ}C$. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped $Mn_3O_4$ thin films in two temperature ranges.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.415-418
• /
• 2002

We have studied electro-optic properties and layer deformations in the smectic phases of 4-(6ethoxy-l-trifluoromethyl-hexyloxycarbonyl)-phenyl-4-Nonyloxybiphenyl-4-carboxylat ( TFMEOHPNBC ) having fluorine attached to one of its benzene rings by electro-optical and small angle x-ray scattering techniques. 3 and 5${\mu}m$ thick test cells were prepared using beryllium plates to minimize x-ray beam absorption. Layer structure and orientation was studied while changing the amplitude and frequency of the applied electric field as a function of cell temperature. We observed that the chevron layer tilt angle is reduced and layer spacing is increased as stabilizing in antiferroelectric phase. This result is extraordinary that there is dimerization in antiferroelectric phase. We also found that there is a threshold electric field that changes the chevron structure to bookshelf structure. This threshold electric field depends on the frequency and temperature as shown in Fig.1. We will discuss the dynamics of layer orientation as determined from the x-ray, electro-optic and dielectric spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.342-343
• /
• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• New Physics: Sae Mulli
• /
• v.68 no.11
• /
• pp.1183-1191
• /
• 2018

The plasmon behaviors in a superlattice of $GaAs/Al_xGa_{1-x}As$ multiple quantum wells with a half-parabolic confining potential due to different dielectric interfaces are studied under magnetic and electric fields perpendicular and parallel to the superlattice axis by using a previously published theoretical framework. From the density-density correlation functions by considering the intrasubband and the inter-subband transitions under the random phase approximation, we calculate the dispersion energies of the surface and the bulk states as functions of the composition of the multiple quantum well structure and of the magnetic field strength and the average electric field strength over the quantum well. The Raman intensities for various magnetic field strengths and average electric field strengths over the quantum well are also obtained as a function of the energy of the incoming light for these states.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.145-145
• /
• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.863-866
• /
• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.13 no.6
• /
• pp.1213-1222
• /
• 2018

The energy band gaps and the bowing parameters of zincblende $GaAs_{1-x}N_x$ on the variation of temperature and composition are determined by using an empirical pseudo-potential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter is calculated as 15eV and the energy band gaps are decreasing rapidly in $GaAs_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of high-frequency dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.