• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.52-55
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• 2001

We report best dielectric function of ZnS by spectroscopic ellipsometry in the 3.7 - 6.0 eV photon energy range at room temperature. Using proper wet chemical etching procedure, natural overlayer was removed to obtain the pure dielectric function of ZnS, which had a higher <$\xi$$_2$> value at the El band gap peak than that previously reported. We also determined the dielectric property of the natural overlayer on ZnS by following the evolution of <$\xi$$_2$> with chemical etching. We found that the optical property of the overlayer was well described by amorphous semiconductor model.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.70-75
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• 2012

An optimization methodology for designing a dielectric-filled plasmonic slot waveguide is presented. The genetic algorithm combined with a rigorous analysis based on the finite element method is used to optimize a nano-scaled plasmonic slot waveguide to have high mode confinement and a long propagation length, for which the objective function is defined as a figure of merit combining both propagation parameters.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.20-24
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• 2003

We Performed the modeling of the dielectric functions of InGaAs by using the parametric semiconductor model. Parametric model describes the analytic dielectric function as the summation of several energy-bounded Gaussian-broadened polynomials and provides a reasonably well parameterized function which can accurately reproduce the optical constants of InGaAs materials. We obtained the values of fitting parameters of an arbitrary composition $\chi$ through the parametric model. And then, from these parameters we could obtain the unknown dielectric functions of InGaAs alloy films ($0\leq\chi\leq1$).

• Current Optics and Photonics
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• v.7 no.4
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• pp.449-456
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• 2023

The localized surface-plasmon resonance has drawn great attention, due to its unique optical properties. In this work a general theoretical description of the dipole mode is proposed, using the forced damped harmonic oscillator model of free charges in an ellipsoid. The restoring force and driving force are derived in the quasistatic approximation under general conditions. In this model, metal is regarded as composed of free charges and bound charges. The bound charges form the dielectric background which has a dielectric function. Those free charges undergo a collective motion in the dielectric background under the driving force. The response of free charges will not be included in the dielectric function like the Drude model. The extinction and scattering cross sections as well as the damping coefficient from our model are verified to be consistent with those based on the Drude model. We introduce size effects and modify the restoring and driving forces by adding the dynamic depolarization factor and the radiation damping term to the depolarization factor. This model provides an intuitive physical picture as well as a simple theoretical description of the dipole mode of the localized surface-plasmon resonance based on free-charge collective motion.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.64-68
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• 1990

Boundary element method using linear basis function is applied to obtain fields scattered from a 3-D dielectric sphere. Electric field integral equation is used on the surfaces of the dielectric material where its surface is discretized into trilateral cells. For plane wave incidence, scattered fields by a dielectric sphere is calculated and compared with its analytic solution. The total electric fields are calculated on the great circle of the sphere boundary as well as the outside of the sphere in the plane of the wave vector and the polarization vector of the incident electric field.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Current Optics and Photonics
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• v.1 no.1
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• pp.45-50
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• 2017

Optical instruments based on polymer-dispersed liquid crystal (PDLC) have been used to inspect transparent electrodes. Generally the operating voltage of an inspection instrument using PDLC is very high, over 300 V, reducing its lifetime and reliability. The operating-voltage issue becomes more serious in the inspection of touch-screen panel (TSP) electrodes, due to the bezel structure protruding over the electrodes. We have theoretically calculated the parameters affecting the operating voltage as a function of the distance between the TSP and the PDLC, the thickness, and the dielectric constant of the sublayers when the inspection module was away from the TSP electrodes. We have experimentally verified the results, and have proposed a way to reduce the operating voltage by substituting a plastic substrate film with a hard coating layer of smaller thickness and higher dielectric constant.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.1
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• pp.35-41
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• 2004

This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.288.1-288.1
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• 2014

We investigated the optical properties of Ge1-xSex and Ge1-x-ySexAsy amorphous semiconductor films using spectroscopic ellipsometry and Raman spectroscopy. The dielectric functions and absorption coefficients of the amorphous films were determined from the measured ellipsometric angles. We obtained the optical gap energies and Urbach energies from the absorption coefficients, and found a strong bowing effect in the optical gap energy of Ge1-x-ySexAsy where the endpoint binaries were Ge0.50Se0.50 and Ge0.31As0.69. Based on the correlation between optical gap energies and Urbach energies, the large bowing parameter was attributed to the electronic disorder. We found the composition dependence of several phonon modes using Raman spectroscopy. For Ge1-x-ySexAsy, the D mode (232-267 cm-1) changed from As-As (or As3 pyramid), to As(Se1/2)3 pyramid, and finally to Se clusters, as the Se composition increased. Resonant Raman phenomenon was observed in Ge0.38Se0.62 at a laser excitation of 514 nm (2.41 eV). We verified that this laser energy corresponds to the transition energy of Ge0.38Se0.62 using the second derivative of the dielectric function of Ge0.38Se0.62.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.209-215
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• 2002

This study investigated the crystal growth, crystalline structure and the basic optical properties of $SnSe/BaF_2$ epilayers. The SnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy(HWE) technique. It was found from the analysis of X-ray diffraction patterns that $SnSe/BaF_2$ epilayer was growing to single crystal with orthorhombic structure oriented [111] along the growth direction. Using Rutherford back scattering(RBS), the atomic ratios of the SnSe was found to be stoichiometric, almost 50 : 50. The best values for the full width at half maximum (FWHM) of the DCXRD was 163 arcsec for SnSe epilarer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $SnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}$(E) of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points in the optical spectra. The real and imaginary parts(${\varepsilon}_1$ and ${\varepsilon}_2$) of the dielectric function ${\varepsilon}$ of SnSe were measured. These data are analyzed using a theoretical model known as the model dielectric function(MDF). The optical constants related to dielectric function such as the complex refractive index(n*-n+ik), absorption coefficient (${\alpha}$) and normal- incidence reflectivity (R) are also presented for $SnSe/BaF_2$.