• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.563-569
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• 2023

Micro light-emitting diodes (LEDs), with a chip size of 100 micrometers or less, have attracted significant attention in flexible displays, augmented reality/virtual reality (AR/VR), and bio-medical applications as next-generation light sources due to their outstanding electrical, optical, and mechanical performance. In the realm of bio-medical devices, it is crucial to transfer tiny micro LED chips onto desired flexible substrates with low precision errors, high speed, and high yield for practical applications on various parts of the human body, including someone's face and organs. This paper aims to introduce a fabrication process for flexible micro LED devices and propose micro LED transfer techniques for cosmetic and medical applications. Flexible micro LED technology holds promise for treating skin disorders, cancers, and neurological diseases.

• The Journal of the Korea Contents Association
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• v.6 no.9
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• pp.98-107
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• 2006

By improving performance of mobile machine(3D engine, 3D accelerator chip set, etc) and developing wireless network technology, a demand for actual contents of users is being increased rapidly. But, there are some difficulties yet for the speedy development of actual contents because of the limitation of development resources that is dependent on each mobile device's different performance. In general, much of the animated character-creation work for mobile environment is still done manually by experienced animator with the method of key frame processing. However, it needs a lot of time and more costs for creating motion. Additionally, it is possible to cause a distortion of motion. In this paper, I solved the difficulties by using a optical motion capture system, it was able to acquire accurate motion data more easily and quickly, and then it was possible to make 3D dance contents efficiently. Also, I showed techniques of key reduction and controlling frame number for using huge amounts of motion capture data in mobile environment which requires less resources. In making 3D dance contents, using an optical motion capture system was verified that it was more efficient to make and use actual-reality contents by creating actual character motion and by decreasing processing time than existing method.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.188-200
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• 1995

A design of unit magnification 2-mirror system with high resolution is presented. It is for soft X-ray(wavelength of 13 nm) projection imaging and suitable for preparation of high density semiconductor chip. In general, a holosymmetric system with unit magnification has the advantage that both coma and distortion are completely eliminated. In our holosymmetric 2-mirror system, spherical aberration is addtionally removed by using two identical paraboloidal mirror surfaces and field curvature aberration is also corrected by balancing Petzval sum and astigmatism which depends on the distance between two mirrors, so that the system is a aplanatic flat-field paraboloidal 2-mirror holosymmetric system. This 2-mirror system is small in size, and has a simple configuration with rotational symmetry about optical axis, and has also small central obscuration. Residual finite aberrations, spot diagrams, and diffraction-based MTF's are analyzed for the check of performances as soft X-ray lithography projection system. As a result, the image sizes for the resolutions of$0.25\mum$and $0.18\mum$are 4.0 mm, 2.5 mm respectively, and depths of focus for those are $2.5\mum$, $2.4\mum$respectively. This system should be useful in the fabrication of 256 Mega DRAM or 1 Giga DRAM. DRAM.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1196-1202
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• 2018

$Li_2Sr_{1-x}Eu_xSiO_{4-{\alpha}}N_{\alpha}$ ($Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$) phosphors were synthesized by using a solid state reaction (SSR) method with submicron $Si_3N_4$ and nano $Si_3N_4$ powders as the sources of Si and N, and the optical properties of those phosphors were studied. The studied phosphors showed efficient excitation characteristics over the broad range from 230 to 530 nm. Also, They showed broad emission spectra covering a range from 500 to 700 nm, with a peak at 568 nm, which was shifted longer wavelength by 18 nm as compared with that of commercial $YAG:Ce^{3+}$. Combined with a 450 nm blue LED chip, the results support the application of the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ phosphor as a luminescent material for a white-light source thaat is warmer than the commercial $YAG:Ce^{3+}$ white-light source. In addition, the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$ phosphors prepared from a submicron $Si_3N_4$ powder was found to emit a previously unreported self-activated luminescence in $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.320-324
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• 2011

TOPO/TOP capped CdSe nanoparticles were synthesized via thermal-solvent method. The 540 nm green and 620 nm red emitting CdSe nanoparticles were obtained by controlling the reaction time and temperature. Phosphor conversion white LED was produced combining a 460 nm emitting InGaN LED chip as an excitation source with 540 and 620 nm CdSe nanoparticles as phosphors. The single or double phosphor layer was fabricated by mixing with epoxy, and investigated the effects on the luminous properties of the white LED. The single phosphor layer white LED showed 5.78 lm/W with CIE of (0.36, 0.45) in reddish white, and the double phosphor layer white LED showed 7.28 lm/W with that of (0.32, 0.34) in pure white at 20 mA. When the 400 nm near-UV LED was applied to optical pumping source, the luminous efficiency of white LED was enhanced to 8.76 lm/W.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.288-293
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• 2011

We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.

• Journal of Digital Contents Society
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• v.10 no.2
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• pp.199-207
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• 2009

The Q-switching the shutter or the different optical science element puts in within the laser light resonator and the storehouse departs from the within the resonator it loses the mortar and the reversal distribution which when is sufficient creates from within the active medium, opens the shutter instantaneously and it is to do to be made to emit with the light where the energy which is accumulated within the resonator is strong very. Like this Q-switching of laser resonator--It decreases factor increasing suddenly to make. To method of Laser Q-switching mechanical switching methods, electro-optic switching methods and switching by saturable absorber methods, acousto-optic switching method etc. 4 kind are being used on a large scale. In these people the conversion which is electric in compliance with the effect which is electrooptics is widely being used the Q-switching pulse of short pulse width because being it will be able to create. Consequently, Pockel cell where it has the quality of electrooptics effect) the Q-it is become known that it is suitable it uses with switch. From the research which it sees FET and one-chip microprocessor where it is a switching element and pulse transfomer to plan and produce pockel cell Q-switch driving gears, pulse style Nd: It applied in YAG Laser system and it investigated and researched the operating characteristic of the Q-switch. Also, the Q-switch leads and Nd where it is output: YAG with forecast in compliance with a theoretical calculation it comes to buy laser beam side politics it compared and laser beam qualities which had become Q-switching it analyzed.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.437-442
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• 2019

Green $BaSi_2O_2N_2:0.02Eu^{2+}$ phosphor is synthesized through a two-step solid state reaction method. The first firing is for crystallization, and the second firing is for reduction of $Eu^{3+}$ into $Eu^{2+}$ and growth of crystal grains. By thermal analysis, the three-time endothermic reaction is confirmed: pyrolysis reaction of $BaCO_3$ at $900^{\circ}C$ and phase transitions at $1,300^{\circ}C$ and $1,400^{\circ}C$. By structural analysis, it is confirmed that single phase [$BaSi_2O_2N_2$] is obtained with Cmcm space group of orthorhombic structure. After the first firing the morphology is rod-like type and, after the second firing, the morphology becomes round. Our phosphor shows a green emission with a peak position of 495 nm and a peak width of 32 nm due to the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ion. An LED package (chip size $5.6{\times}3.0mm$) is fabricated with a mixture of our green $BaSi_2O_2N_2$, and yellow $Y_3Al_5O_{12}$ and red $Sr_2Si_5N_8$ phosphors. The color rendering index (90) is higher than that of the mixture without our green phosphor (82), which indicates that this is an excellent green candidate for white LEDs with a deluxe color rendering index.