• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.6
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• pp.263-269
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• 2019

The mechanism of microstructure and hardness changes during mill annealing of Ti-6Al-4V alloy was investigated. The annealing heat treatments were performed at $675{\sim}795^{\circ}C$ in vacuum for 2 hours, followed by air cooling. The microstructure was observed by using an optical microscope and X-ray diffraction, and hardness was measured by using a Rockwell hardness tester and micro Vickers hardness tester. The average grain size becomes smaller at $675^{\circ}C$ to $735^{\circ}C$ due to the formation of new grains rather than grain growth, but becomes larger at $735^{\circ}C$ to $795^{\circ}C$ due to growth of the already-formed grains rather than formation of new grains. The mill annealing temperature becomes higher, the ${\beta}$ phase fraction decreases and ${\alpha}$ phase fraction increases at room temperature. This is because the higher annealing temperature, the smaller amount of V present in the ${\beta}$ phase, and thus the ${\beta}$ to ${\alpha}$ transformation occurs more easily when cooled to room temperature. As the mill annealing temperature increases, the hardness value tends to decrease, mainly due to resolution of defects such as dislocations from $675^{\circ}C$ to $735^{\circ}C$ and due to grain growth from $735^{\circ}C$ to $795^{\circ}C$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.416-419
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• 2008

In this study, we report on the characteristics of Aldoped ZnO (AZO) co-sputtered indium tin oxide (ITO) films prepared by dual target direct current (DC) magnetron sputtering at room temperature for organic light emitting diodes (OLEDs). The electrical and optical properties of co-sputtered IAZTO electrode were critically dependent on the DC power of AZO. Furthermore, the characteristics of co-sputtered IAZTO electrode were influenced by rapid thermal annealing temperature.

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.371-372
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• 2008

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.98-106
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• 1990

Lasers are used increasingly for specialized engineering applications such as drilling, profile cutting, welding and surface heat-treatment(hardening, alloying, annealing0 of metals and non-metals. The most important characteristics of lasers used for these materials-processing applications are reviewed, with special emphasis on the importance of the controlled heating process. In addition to these processes, some optical devices and supplementary equipment used in laser processing are introduced. Finally, some examples shows the wide variety of laser capability for substitution of traditional materials processing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.567-571
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• 2009

Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.132-132
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• 2008

Boron doped ZnO:Ga(GZOB) thin films were prepared on glass substrates by DC magnetron sputtering. Influence of the annealing treatment on the electrical and optical properties of GZOB thin films were investigated. The west resistivity of $9.6\times10^{-4}\Omega$-cm was obtained at an annealing temperature of $400^{\circ}C$. The average transmittance of the films is over 80% in the visible range. It was also shown that by introducing boron impurity into GZO system improve the uniformity, the resistivity, and thermal stability of ZnO-based conducting thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.260-261
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• 2008

In this study, we investigated the properties of Indium Zinc Oxide (IZO) films prepared in facing targets sputtering (FTS) system at room temperature as function of oxygen contents. As as-deposited films were rapidly thermal annealing on air atmosphere of $400^{\circ}C$ for 30s. As a result, the transmittance of IZO films increased with increasing oxygen flow in the visible range. After rapidly thermal annealing to films, the optical properties of films improved than films deposited at R.T, but the electrical properties decreased. Before RTA treatment, the lowest resistivity IZO is $5.4\times10^{-4}[\Omega{\cdot}cm]$ at oxygen gas flow. But, after RTA treatment, IZO films have the value of lowest resistivity at the lower oxygen gas ratio in compare with before RTA treatment. The resistivity of IZO films is $7.29\times10^{-4}[\Omega{\cdot}cm]$ at pure argon atmosphere.