• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.965-970
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method and the effects of the different experimental variables on the electrical resistivity and optical transmittance of the prepared films have been investigated in details. The best film with a resistivity of about 8 X 10S0-2TΩcm and transmittance about 80% has been obtained at the substrate temperature of 4$25^{\circ}C$ by using HS12T+CHS13TOH(1:3) solvent and NS12T carrier gas after annealing at 20$0^{\circ}C$ for 40 minutes in vacuum. Furthermore, We have also found the effect of substrate temperature on crystallographic orientation and surface morphology. Annealing of the as-deposited film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation.

• Journal of the Korean Society for Heat Treatment
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• v.26 no.2
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• pp.55-58
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• 2013

ITO thin films deposited on glass substrate with RF magnetron sputtering were vacuum annealed at 100, 200 and $300^{\circ}C$ for 30 minutes and then effect of annealing temperature on the structural, electrical and optical properties of ITO films were investigated. The structural properties are strongly related to annealing temperature. The annealed films above $100^{\circ}C$ are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at $300^{\circ}C$. The electrical resistivity also decreases as low as $4.65{\times}10^{-4}{\Omega}cm$ with a increase in annealing temperature and ITO film annealed at $300^{\circ}C$ shows the lowest sheet resistance of $43.6{\Omega}/{\Box}$. The optical transmittance in a visible wavelength region also depends on the annealing temperature. The films annealed at $300^{\circ}C$ show higher transmittance of 80.6% than those of the films prepared in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.270-271
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• 2008

Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.871-873
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• 2009

We report on the growth of rubrene ($C_{42}H_{28}$) wire fabricated by thermal evaporation, followed by solvent-vapor annealing for the application of organic thin film transistor. Solvent-vapor annealing was carried out in precisely controlled vapor pressure at elevated temperature. Micro-sized, and elongated rubrene wire was obtained via solvent annealing process reproducibly. Optical image and XRD data shows highly crystalline quality of rubrene wire.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.103-108
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• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.73-78
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• 2012

The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at $600^{\circ}C$ under $10^{-10}$ Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.58-61
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• 2005

In an effort to improve the electrical properties of ZnO:Al transparent electrode films, post-annealing treatment in hydrogen atmosphere was attempted with varying annealing time at 573 K for compatibility with typical display device fabrication processes. It was observed that carrier concentrations and mobilities increased with longer annealing time with small changes in crystallinity. This resulted in substantial decrease in resistivity from $4.80{\times}10^{-3}$ to $8.30{\times}10^{-4}{\Omega}cm$ due to increased carrier concentration. Such improvements in electrical properties are attributed to the passivation of the grain boundary surfaces. The optical properties of the films, which changed in accordance with the Burstein-Moss effect, were consistent with the observed changes in electrical properties.

• Journal of Korea Multimedia Society
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• v.7 no.3
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• pp.349-356
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• 2004

In this paper, a practical image security system using SA algorithm and 4-f optical correlator system is proposed. The encrypted image and key image with binary phase components are generated using an iterative SA algorithm. a decrypted image is found through the correlation of the encrypted and key images using 4-f optical correlator system. The encrypted and key images are consisted of binary phase components. So, it is easy to implement the optical security system using the proposed technique. And if we fix the encrypted image in the optical security system and change the key images, we get different images, so it is possible to apply to the distinguished authorization system using different key images. Computer simulations show that despite the binary phase components of the two images(encrypted and key image), decrypted images are generated.

• Korean Journal of Materials Research
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• v.19 no.3
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• pp.125-131
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• 2009

In this report, the structural and optical properties of sol-gel derived $Mg_xZn_{1-x}O$ thin films upon changes in the composition and annealing temperature were investigated. The $Mg^{2+}$ content and the annealing temperature were varied in the range of $0{\leq}x{\leq}0.35$ and $400^{\circ}C{\leq}T{\leq}600^{\circ}C$, respectively. The films exhibited a hexagonal wurtzite structure of a polycrystalline nature. The optical transmittance exceeded 85% and the optical band gap of the film was tuned as high as 3.84 eV at a value of x = 0.35 (annealed at $400^{\circ}C$), which was evidently the maximum $Mg^{2+}$ content for the single-phase polycrystalline $Mg_xZn_{1-x}O$ thin films prepared in this experiment. The optical band gap and photoluminescence emission were tailored to the higher energy side while maintaining crystallinity without a significant change of the lattice constant.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1272_1274
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• 2009

$MgF_2$ is a current material for the optical applications in the UV and deep UV range. Process variables for manufacturing the $MgF_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions, and then by changing a number of vapor deposition conditions and substrate temperature, Annealing conditions variously, structural and Optical characteristics were measured. Thereby, optimum process variables were derived. Nevertheless, modern applications still require improvement of the optical and structural quality of the deposited layers. In the present work, the composition and microstructure of $MgF_2$ single layers grown on slide glass substrate by Electro beam Evaporator(KV-660) processes, were analyzed and compared. The surface Substrate temperature having an effect on the quality of the thin film was changed from 200[$^{\circ}C$] to 350[$^{\circ}C$] at intervals of 50[$^{\circ}C$]. and annealing temperature an effect on the thin film was changed from 200[$^{\circ}C$] to 400[$^{\circ}C$] at intervals of 50[$^{\circ}C$]. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM.