• Title/Summary/Keyword: optical and electrical characteristics

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전기적 시분할 다중 방식을 이용한 20 Gb/s 광송,수신기의 제작 및 성능 평가 (Configuration of ETDM 20 Gb/s optical transmitter / receiver and their characteristics)

  • 임상규;조현우;류갑열;이종현
    • 한국광학회지
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    • 제13권4호
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    • pp.295-300
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    • 2002
  • 20 Gb/s 광 전송 시스템을 위한 광 송신기와 수신기를 전기적 시분할 다중 방식으로 제작하고 그 특성을 측정하였다. 특히 광 수신기의 핵심 회로인 클럭(19.906㎓) 추출 회로의 구현을 위해 반파장 지연 선로와 상용화된 EX-OR 소자를 이용한 NRZ-PRZ 변환기와 유전체 공진기를 이용한 협대역 대역통과 필터 및 마이크로스트립 대역통과 필터를 설계, 제작하였으며, 최종적으로 수신부에서 1:2로 역다중화된 10 Gb/s 신호의 비트 오율(BER)을 측정하였다. 제작된 송ㆍ수신기를 직접 연동하였을 때, 수신기의 수신 감도는 BER $1{\times}10^{-12}$에서 -26.2dBm을 나타내었다.

광통신용 GaAs 기반 1.3 μm GaAsSb/InGaAs와 GaAsSb/InGaNAs 양자우물 레이저의 광학적특성 시뮬레이션 (Simulation of Optical Characteristics of 1.3 μm GaAs-Based GaAsSb/InGaAs and GaAsSb/InGaNAs Quantum Well Lasers for Optical Communication)

  • 박승환
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.1-6
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    • 2011
  • Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

Study on Mechanism and Electro-Optical Characteristics of Liquid Crystal Alignment Employing ZnO:Al Electrode

  • Kim, Mi-Jung;Oh, Byeong-Yun;Kim, Byoung-Yong;Kang, Dong-Hun;Park, Hong-Gyu;Lee, Kang-Min;Moon, Hyun-Chan;Seo, Dae-Shik
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.433-433
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    • 2007
  • In this paper, we investigated the feasibility of applying ZnO:Al films to display devices as transparent electrodes, and reported the electro-optical (EO) characteristics of VA cells using ZnO:Al electrodes and compared them with those of VA cells using ITO electrodes. The experiment results show that a uniform vertical LC alignment and a large pretilt angle were achieved. Also, the good voltage-transmittance curve, response time, and capacitance-voltage characteristics were observed for the rubbing aligned VA-LCD using ZnO:Al electrodes m comparison with ITO electrodes. In other words, the vertical alignment mode based on the ZnO:Al electrodes showed appropriate electro-optical characteristics and high transparency in comparison with that based on the ITO electrodes. These results indicated that the transparent ZnO:Al electrodes of the liquid crystal displays could substitute the ITO electrodes.

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Polynobornene 유도체 표면을 이용한 광배향 VA-LCD의 전기광학특성에 관한 연구 (A Study on Electro-optical Characteristics of the Photoaligned VA-LCD on the Polynobornene Derivative Surface)

  • 황정연;서대식;박경선;서동학;남상희
    • 한국전기전자재료학회논문지
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    • 제15권3호
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    • pp.253-257
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    • 2002
  • A new photoalignment material PNC, pole norbornene-2,3-dicarboxyolyl cholesterol, was synthesized and the electro-optical (EO) characteristics of the vortical-alignment (VA) liquid crystal display (LCD) photoaligned with UV exposure on the PNC surface were studied. EO characteristics of the photoaligned VA-LCD using a UV filter-less method was better than that of the UV filter method on the PNC surface for short UV exposure time. The response time of the photoaligned VA-LCD on the PNC surface without UV filter on the PNC surface is almost the same compared with the rubbing aligned VA-LCD.

박막의 열물성 측정 및 광학특성 연구 (A Study on Thermal Conductivity Measurement and Optical Characteristics of Thin Films)

  • 권혁록;이성혁
    • 전기학회논문지
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    • 제56권12호
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    • pp.2202-2207
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    • 2007
  • The present article investigates experimentally and theoretically thermal and optical characteristics of thin film structures through measurement of thermal conductivity of Pyrex 7740 and reflectance in silicon thin film. The $3{\omega}$ method is used to measure thermal conductivity of very thin film with high accuracy and the optical characteristics in thin films are studied to examine the influence of incidence angle of light on reflectance by using the CTM(Characteristics Transmission Method) and the 633 nm He-Ne laser reflectance measurement system. It is found that the estimated reflectance of silicon show good agreement with experimental data. In particular, the present study solves the EPRT(Equation of Phonon Radiative Transport) which is based on Boltzmann transport equation for predicting thermal conductivity of nanoscale film structures. From the results, the measured thermal conductivity is in good agreement with the previous published data. Moreover, thermal conductivities are estimated for different film thickness. It indicates that as film thickness decreases, thermal conductivity decreases substantially due to internal scattering.

평판형 광-바이오센서용 2차원 광자결정 제작을 위한 Dip-Pen Nanolithography 공정 연구 (A Study on Dip-Pen Nanolithography Process to fabricate Two-dimensional Photonic Crystal for Planar-type Optical Biosensor)

  • 김준형;이종일;이현용
    • 한국전기전자재료학회논문지
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    • 제19권3호
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    • pp.267-272
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    • 2006
  • Optical waveguide based on symmetric and asymmetric Mach-Zehnder interferometer(MZI) type was designed, fabricated and measured the optical characteristics for the application of biosensor. The wavelength of the input optical signal for the device was 1550 nm. And the difference of refractive index was $0.45\;{\Delta}\%$ between core and cladding of the device. The TM(Transverse Magnetic) mode optical properties of the biosensor were analyzed with the refractive index variation of gold thin film deposited for overclad. Nowadays, nano-photonic crystal structures have been paied much attention for its high optical sensitivity. There is a technique to realize the structure, which is called Dip-Pen Nanolithography(DPN) process. The process requires a nano-scale process patterning resolution and high reliability. In this paper, two dimensional nano-photonic crystal array on the surface was proposed for improving the sensitivity of optical biosensor. And the Dip-Pen Nanolithogrphy process was investigated to realize it.

광쌍안정을 갖는 GaAs/AlGaAs MQW 도파로형 위상 광변조기 (GaAs/AlGaAs MQW waveguide phase modulator with optical bistability)

    • 한국광학회지
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    • 제7권3호
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    • pp.280-286
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    • 1996
  • 본 논문에서는 자기 전광 효과를 이용하여 광쌍안정을 갖는 새로운 형태의 도파로형 광변조기의 동작 특성에 관하여 논하였다. 제작된 소자는 전계의 세기에 따른 굴절률의 변화를 이용하는 위상 변조형 광변조기와 전기적 쌍안정성을 갖는 수광 소자가 병렬로 연결된 구조로 되어 있다. 광도파로층과 수광 소자의 흡수층은 GaAs/AlGaAs 다중 양자 우물층을 사용하였다. 수광 소자에 흡수되는 광의 세기에 따라 변하는 다이오드 전압은 도파로형 광변조기를 통과하는 광의 세기를 조절하며 SEED의 전기적 쌍안정을 이용하여 도파로형 광변조기의 광쌍안정을 얻을 수 있었다. 본 논문에서 제안된 광변조기는 기존의 도파로형 광변조기에 비해 낮은 입력광에서도 광안쌍정을 갖는 장점을 갖는다.

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Optimization of GZO/Ag/GZO Multilayer Electrodes Obtained by Pulsed Laser Deposition at Room Temperature

  • Cheon, Eunyoung;Lee, Kyung-Ju;Song, Sang Woo;Kim, Hwan Sun;Cho, Dae Hee;Jang, Ji Hun;Moon, Byung Moo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.336.2-336.2
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    • 2014
  • Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.

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둥근형 무전극 램프의 페라이트 코어와 냉점의 온도 의존성 (Dependence of Round Type Electrodeless Lamp according to Ferrite Core and Cold Spot Temperature)

  • 장혁진;양종경;김남군;정영일;박대희
    • 한국전기전자재료학회논문지
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    • 제22권12호
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    • pp.1078-1083
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    • 2009
  • Generally Lighting system consists of lamp and luminaire. When a fluorescent lamp is installed in luminaire, power and light output is changed by ambient temperature. Particularly electrodeless lamp depends on the changes that are mercury pressure with amalgam temperature and magnetic properties with ferrite temperature. It has finally influence on optical efficiency. In this study, the temperature change of ferrite and cold spot, vessel are measured at transitional state and then same characteristics are measured with increase of ambient temperature. At transitional state, luminous flux is related to temperature change of cold spot that compare with behavior of mercury pressure and light output. At increase of ambient temperature, we analyzed change that efficiency and electrical, optical characteristics of elecrodeless lamp are related to ferrite core and cold spot temperature.

UV 조사에 의한 doped ZnS 나노입자의 annealing 효과 (Optical annealing of doped ZnS nanoparticles through UV irradiation)

  • 이준우;조경아;김현석;김진형;박병준;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.24-27
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    • 2004
  • ZnS nanoparticles were synthesized and doped with $Pr^{3+}\;and\;Mn^{2+}$. Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for $Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with $Pr^{3+}$, respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing.

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