• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.543-551
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• 1994

The creep behavior and creep fracture of sintered alumina at high temperature were investigated under four point flexural test. Steady-state creep behavior was observed at low bending stress and primary creep until fracture was observed at hish bending stress. The loading history of bending stress did not affect on steady-state creep rate. Intergranular fracture was dominant for fracture of alumina at room and high temperature. However, transgranular fracture was dominant on creep of alumina under high temperature by nucleation and growth of microcracks due to residual flaws or cavities in the material.

• Macromolecular Research
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• v.12 no.2
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• pp.225-232
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• 2004

We have successfully synthesized relatively monodisperse and cross-linked melamine-formaldehyde (M-F) microspheres by dispersed polycondensation and subsequent pH adjustment with serum replacement cleaning. The average particle sizes (equation omitted): weight-average and (equation omitted) : number-average), the polydispersity index (equation omitted), the number of particles N$\_$p/ and the gel content of the M-F microspheres were observed by varying the pH, the surfactant concentration, and the polymerization temperature. We observed that both the pH and the polymerization temperature were predominant factors in determining (equation omitted) and N$\_$p/, but the effect that the temperature and pH had on the gel content ( ＞ 94% for all samples) was negligible. The exponents of the slopes of plots of N$\_$p/ versus pH and surfactant concentration were －10 and 0.6, respectively. Particle nucleation and growth were achieved within short periods; the incessant coagulation occurred even in the presence of surfactants.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.197-202
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• 1995

The surface morphology and grain growth of amophous silicon (a-Si) films deposited by low pressure chemical vapor deposition (LPCVD) have been investigated as a function of deposition and in sltu annealing condition. The film deposited at the amorphous to polycrystalline transition temperature has an extra-rough, rugged surface with (311) t.exture. At the same deposition temperature, the grain structure tends to shirr. from the polycrystalline to the amorphous phase with increasing the film thickness. It is found that nucleation of a-Si during in situ annealing at the transition temperature without breaking the vacuum starts to occur from surface Si atom migration in contrast to a heterogeneous nucleation during film deposition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.275-285
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• 1996

The effect of heat-treatment on catalytic crystallization in $LI_2O-Al_2O_3-SiO_2$ glass system over its glass transition temperature was investigated. Glass composition $4Li_2O{cdot}22AL_2O_3{cdot}66SiO_2{cdot}2TiO_2{cdot}2.5ZrO_2{cdot}1.5P_2O_5{cdot}1.0Na_2O{cdot}1.0As_2O_3$ (wt%) was selected and heat-treated at different heating conditions to obtain transparent glass-ceramic. Nucleation and crystallization behaviour of this composition were estimated by differential thermal analysis (DTA) and X-ray diffractometer (XRD) and its thermal expansion coefficients were measured by Dilatometer. As a result, glass transition temperature was $730^{\circ}C$ and two maximum nucleation temperatures were estimated at $730^{\circ}C$ and 82$0^{\circ}C$ using JMA(Johson-Mehl-Avrami) equation by DTA. $ZrTiO_4$ $\beta$-Quartz solid solution and $\beta$-Spodumene crystals were identified by XRD. The optimum crystallization temperature was 92$0^{\circ}C$ and three step heating schedule was expected to be useful to obtain transparent glass-ceramic.

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.303-308
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• 1999

Dielectric thin films of PLT(28) ($(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$) have been deposited on $Pt/Ti/SiO_2/Si$ substrates in situ by a laser ablation. We have systematically changed the laser fluence from 0.4 J/$cm^2$ to 3 J/$cm^2$, and deposition temperature from $450^{\circ}C\; to\; 700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. The deposition temperature influenced on nucleation energy much stronger than the laser energy density did.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.177-180
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• 2002

Microwave has been utilized for low-temperature crystallization of amorphous Si films. Microwave annealing lowered the crystallization temperature and shortened the annealing time. The combination of Ni and microwave applications on a-Si films further enhanced the crystallization. The enhancement was due to both reduced nucleation activation energy and growth activation energy.

• Korean Journal of Food Science and Technology
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• v.29 no.2
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• pp.326-336
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• 1997

Four ice nucleation-active bacteria (INA-bacteria), Pseudomonas syringae, Xanthomonas campestris, Escherichia coli JM109/pEIN229 and Gluconobacter oxydans/pKIN230, were treated with heat, pressure and gamma-irradiation to compare viability and their ice nucleation activity (INA) after sterilization. Gamma-irradiated INA-bacteria showed the least decrease in T90 value (the temperature at which the 90% of drops are frozen). According to cumulative INA spectra, gamma-irradiated INA-bacteria showed little decrease in class A ice nuclei $(nucleate\;H_{2}O\;at\;higher\;than\;-5^{\circ}C)$, pressurized INA-bacteria showed more than 90% decrease in class A ice nuclei, and heat-treated INA-bacteria barely showed class A ice nuclei. Differential scanning calorimetry (DSC) was used to examine the effect of INA-bacteria on the thermophysical properties of water at freezing temperature. Freezing peaks were appeared at about $11{\sim}15^{\circ}C$ higher on thermograms and enthalpies of phase change were decreased for the water containing INA-bacteria compared with the pure water, while melting peaks were not shifted. INA measured by DSC method were significantly correlated with INA measured by drop freezing method $(R^{2}>0.993,\;p<0.0001)$, indicating that DSC can be used as a new, simple and precise method for measuring INA.

• Applied Chemistry for Engineering
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• v.8 no.1
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• pp.84-91
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• 1997

Diamond film was deposited on Mo substrate at atmospheric pressure using a combustion flame apparatus with the addition of $H_2$. With the substrate temperature, the nucleation density of the substrate was increased. At temperatures above $1000^{\circ}C$, some of diamond was partly converted into graphite and etched by hydrogen atoms. With an increase of the $C_2H_2/O_2$ ratio, the nucleation density was increased. But crystals were cauliflower-shaped and a large number of amorphous carbon were deposited. With the addition of $H_2$, the nucleation density of diamond was increased by the improvement of surface activity. Diamond film of high crystallinity was deposited by etching amorphous carbon. With an increase of deposition time, the thickness of diamond film was increased.