• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.533-538
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• 2000

Ductile fracture of dual phase steel begins with void nucleation, at martensite-ferrite interface of deformed martensite particle. In this study, void nucleation, growth, and coalescence under various strain were studied in dual phase steel. Therefore, by means of the heat treatment of low carbon steel, the study deals with void nucleation and growth for ferrite grain size and martensite volume fraction of dual phase steel using statistical method. Void nucleation and growth with increasing strain are shown depend upon the ferrite grain size. Voids volume fraction generally increase as ferrite grain size decease.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.155-158
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• 1997

Highly oriented diamond films were deposited on a (100) silicon substrate by bias enhanced nucleation technique. Both plan-view and cross-section TEM were applied to study the nucleation and growth mechanism of diamond grains. Randomly oriented polycrystalline diamond grains with internal microtwins were observed at the nucleation stage while defect free regions were retained at the growth stage and were apparently related with the epitaxy of diamond films. From our experimental results, the nucleation and texture formation mechanism of diamond films is discussed.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.303-306
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• 1999

On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

• Particle and aerosol research
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• v.5 no.4
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• pp.171-178
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• 2009

$PM_{2.5}$ is one of critical air pollutants due to its high absorbability of heavy metallic fumes, PAH and bacillary micro organisms. Such a fine particulate matter is often formed through various nucleation processes including condensation. This study attempts to find the nucleation behaviors of $PM_{2.5}$ arisen from coal power stations using a classical heterogeneous Fletcher's theory. The numerical simulation by C-language could approximate the nucleation process of $PM_{2.5}$ from water vapor, of which approach revealed the required energy for embryo formation and embryo size and nucleation rate. As a result of the calculation, it was found that wetting agents could affect the particle nucleation in vapor condensation. In particular, critical contact angle relates closely with the vapor saturation. Particle condensation could be reduced by lowering the angles. The wetting agents aid to decrease the contact angle and surface tensions, thereby may contribute to save the formation energy.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.197-201
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• 2009

A lot of work is carried out concerning to acicular ferrite formation in the weld metal of high strength and low-alloy steel. Those results are suggesting that oxides that contain titanium elements provides nucleation site of intragranular ferrite, referred as acicular ferrite. Thus, when intragranular ferrite is expected to form in heat-affected zone, oxide containing titanium element should be formed in the steel. However, normal steel is deoxidized by using aluminum element (Al-killed steel) with little oxygen content. It means almost oxygen is deoxidized with aluminum elements. In the present work, in order to form the acicular ferrite in the heat affected zone, with the same concept in the case of weld metal, the steel deoxidized with titanium element (titanium killed-steel) is prepared and the acicular ferrite formation is observed in detail by using laser-conforcal microscopy technique. The confocal technique makes it possible that the morphological change along the phase transformation from austenite to ferrite is in-situ tracked. Thus, the inclusion that stimulated the ferrite nucleation could be directly selected from the observed images, in the HAZ of the Ti-killed steel. The chemical composition of the selected inclusion is analyzed and the nucleation potential is discussed by changing the nucleation site with boron element. The potency for the ferrite nucleation is summarized and the existence of effective and ineffective manganese sulfide for nucleation is made clear.

• Advances in nano research
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• v.5 no.4
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• pp.303-311
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• 2017

The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs-nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ${\varepsilon}^*=0.039$ the sign of critical energy and volume is changed. We assume that at ${\varepsilon}={\varepsilon}^*$ the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (${\varepsilon}$ < ${\varepsilon}^*$), the bulk nucleation mechanism dominates. However, at ${\varepsilon}$ > ${\varepsilon}^*$, when the energy barrier becomes negative as well as a larger misfit provides a low-barrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for $Ga_{1-x-y}In_xAl_yN$ quasiternary system was calculated and studied and its 3D sketch was plotted.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.3
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• pp.124-131
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• 2016

GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.443-451
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• 1992

Effects of various pretreatments on the nucleation of CVD-W deposited on the reactively sputter-deposited TiN was investigated. Incubation period of nucleation and deposition rate decreased by the pretreatment of Ar rf-sputter etching for the depth below 300k, but they increased for the etchig depth over 200A. The preteatment of Ar ion implantation decreased the incubation period of nucleation, but increased deposition rate. Also Si$H_4$flushing pretreatment decreased the incubation period of nucleation slightly due to the absorption of Si by TiN surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.28-30
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• 1992

Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.159-162
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• 1997

Diamond was uniformly nucleated on large area Si(001) substrate (3cm$\times$4cm) using the low pressure magnetoactive microwave plasma chemical vapor deposition. $CH_4/He$ gas mixture was used as source gas in order to obtain high radical density in the nucleation enhancement step. $CH_3$radical density was measured by means of infrared laser absorption spectroscopy. The effect of substrate bias voltage on diamond nucleation was examined. The results showed that a suitable positive bias voltage appled to the substrate with respect to the chamber could enhance diamond nucleation while a negative bias voltages leaded to deposition of only non-diamond phase carbon.