• Journal of Korean Society on Water Environment
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• v.23 no.5
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• pp.756-760
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• 2007

Most of the sewage treatment plants in Korea are being operated by using the conventional activated sludge process. Recently, as the water criteria have been strict with regard to such main culprits of eutrophication, the existing sewage treatment plants are obliged to upgrade their treatment technology to meet the criteria. Under such circumstances, this study was aimed at analyzing the conditions of an existing sewage treatment plants in Korea, and thereupon, test its treatment performance for the actual sewage water by operating a pilot plant. When the pilot plant was operated with the NPR process at the capacity of $30m^3/day$, the average contents of BOD, $COD_{Mn}$, SS, T-N and T-P in the effluents were 7.0 mg/L, 9.7 mg/L, 5.1 mg/L, 8.0 mg/L and 0.23 mg/L, respectively, which were very stable in general. Accordingly, if the NPR process used for this pilot plant to upgrade the treatment technology for the sewage treatment plat could be adopted, the effluent water quality criteria effective beginning from 2008 would be met.

• Journal of Applied Biological Chemistry
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• v.43 no.3
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• pp.147-151
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• 2000

A gene, nprM, from Bacillus megaterium ATCC 14945 was obtained by PCR using primers synthesized based on two nprM sequences from two different strains, and cloned into Escherichia coli. The gene nprM encoded an extracellular neutral protease, and the molecular mass of the expressed enzyme was estimated to be approximately 36kDa on a denaturating gel. The enzyme was activated by $Ca^{2+}$, and the optimum concentration of $Ca^{2+}$ was 5 mM. The enzyme was inhibited by EDTA but not by PMSF. The optimal pH and temperature of the cloned enzyme were $50^{\circ}C and pH 7.5-8.0, respectively, and were similar to those of the enzyme from the gene gonor cell. The cloned NprM caused internal cleavage of the native endoglucanase of B. subtilis BSE616 as a model foregin protein, and resulted in a small truncated but still active endoglucanase.

• Biomolecules & Therapeutics
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• v.17 no.2
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• pp.156-161
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• 2009

The human cytochrome P450 4A11 is the major monooxygenase to oxidize the fatty acids and arachidonic acid. The production of 20-hydroxyeicosatetraenoic acid by P450 4A11 has been implicated in the regulation of vascular tone and blood pressure. Oxidation reaction by P450 4A11 requires its reduction partners, NADPH-P450 reductase (NPR). We report the functional expression in Escherichia coli of bicistronic constructs consisting of P450 4A11 encoded by the first cistron and the electron donor protein, NPR by the second. Typical P450 expression levels of wild type and several N-terminal modified mutants was observed in culture media and prepared membrane fractions. The expression of functional NPR in the constructed P450 4A11: NPR bicistronic system was clearly verified by reduction of nitroblue tetrazolium. Membrane preparation containing P450 4A11 and NPR efficiently oxidized lauric acid mainly to $\omega$-hydroxylauric acid. Bicistronic coexpression of P450 4A11 and NPR in E. coli cells can be extended toward identification of novel drug metabolites or therapeutic agents involved in P450 4A11 dependent signal pathways.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.11
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• pp.952-962
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• 2015

Various types of altitude compensation nozzles have been investigated to develop an effective propulsion system. In order to obtain baseline data for future study of dual bell nozzles, main characteristics and key parameters of dual bell nozzles are summarized and described by analysing DLR dual bell nozzles. DLR's experimental researches show that inflection angle is proportional to transition NPR, and extension length is proportional to side load, but inversely proportional to transition NPR and transition duration. Therefore, the nozzle geometry can be determined through the performance prediction process and thus the optimization process is required to meet performance requirements between parameters.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.678-681
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• 2010

In the present work, a numerical study is conducted to investigate the effect of the transient nozzle pressure ratio (NPR) on the flow fields inside the nozzle. The unsteady, compressible, axisymmetric, Navier-Stocks equations with SST $k-{\omega}$ turbulence model are solved using a fully implicit finite volume scheme. In order to simulate the start-up and shut-down processes of the engine, NPR is varied from 2.0 to 10.0. It is observed that the interaction patterns and the hysteresis phenomenon strongly depend on the time variation of NPR, leading to significantly different characteristics in the lateral forces.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• International Journal of Industrial Entomology and Biomaterials
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• v.8 no.1
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• pp.67-71
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• 2004

Ten improved mulberry varieties (Vl, C1730, C2016, C2017, Anantha, RFS-175, Thallaghatapura, Vishala, S1 and S1635) were evaluated through enzyme assay and estimation of soluble protein content followed by regression analysis, grown under irrigated conditions in the alluvial soils of Gangetic plains of West Bengal in India for five successive crops in a year, The nitrate reductase (EC No. 1.6.6.1) activity (NRA, $\mu$mol N $O_2$- $h^{-1}$ $g^{-1}$ fr, wt.), total soluble protein (mg $g^{-1}$ fr, wt.) was estimated which showed to vary significantly in the tested varieties. In addition to these, the other parameters like unit leaf fresh and dry weight (g), moisture ％, unit leaf area ($\textrm{cm}^2$), specific leaf weight (g c $m^{-2}$ ), total soluble sugar (mg $g^{-1}$ fr, wt.), leaf yield/plant (kg), shoot yield/plant (kg) and net photosynthetic rate (NPR, $\mu$㏖ $m^{2}$ $s^{-1}$ ) were also studied which showed to vary significantly in tested varieties. Among them, S1635, haying higher NRA (13.25 $\mu$㏖ N $O_2$- $h^{-l}$ $g^{-1}$ fr, wt.), total soluble protein (39.63mg $g^{-1}$ fr, wt.), NPR(16.66 $\mu$㏖ $m^{-2}$ $s^{-1}$ ), total soluble sugar (48.44 mg $g^{-1}$ fr. wt.), leaf yield/plant (0.689 kg) and shoot yield/plant (1.135 kg) showed its superiority over other tested varieties. Regression and correlation coefficients were analysed, and a strong positive correlation was found between NRA ＆ total soluble protein, NRA ＆ NPR, NRA ＆ total soluble sugar, NRA af unit leaf weight, NRA ＆ specific leaf weight, NRA ＆ leaf yield/plant, NRA ＆ shoot yield/plant, NPR ＆ leaf yield and NPR ＆ specific leaf weight.t.

• Journal of KIISE:Computer Systems and Theory
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• v.33 no.6
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• pp.344-353
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• 2006

In this paper, we present a new algorithm which imitate real pencil strokes. The purpose of research on NPR(Non-Photorealistic Rendering) is simulating automatically manmade artistic expressions such as pen-and-ink illustrations, watercolor paintings, pencil sketches and pastel drawings with computers. Recently, there has been a great deal of research works on NPR. One of them is researching in pencil illustration methods for NPR, and a lot of researchers have investigated into the LIC(Linear Integral Convolution) techniques which would change the initial images into the output images by directional vector field images for generating effects of pencil. However, the LIC techniques can not be applied to real-time drawing tools because they are post processing techniques. This paper presents a real-time pencil strokes algorithm which is based on an observation of how pencils(from 6B to 6H) draw lines. Although this algorithm using some pencil variables and noise generation is simple, it is fast and also can draw real-time pencil strokes similar to real manmade pencil strokes in a GUI drawing tool.