• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.265.2-265.2
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• 2013

We fabricate poly(3,4-ethylenedioxythiopene patterns using liquid-bridge-mediated nanotransfer (LB-nTM) printing via vapor phase polymerization (VPP). LB-nTM printing method can simultaneously enable the synthesis, alignment and patterning of the nanowires from molecular ink solutions. Two- or three-dimensional complex structures of VPP-PEDOT were directly fabricated over a large area using many types of molecular inks. VPP method is a versatile technique that can be used to obtain highly conducting coatings of conjugated polymer on both conducting and non-conducting substrates. The PEDOT patterns has analyzed crystallinity from X-ray diffraction pattern and select-area diffraction patterns. In addition, the PEDOT pattern has high conductivity compared other conducting polymers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.155-156
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• 2006

UV-NIL is a promising technology for the fabrication of sub-100 nm features. Due to non-uniformity of the residual layer thickness (RLT) and a strong possibility of defects, many UV-NIL processes have been developed and some are commercially available at present, most are based on the 'step-and-repeat' nanoimprint technique, which employs a small-area stamp, much smaller than the substrate. This is mainly because, when a large-area stamp is used, it is difficult to obtain acceptable uniform residual layer thickness and/or to avoid defects such as air entrapment. As an attempt to enable UV_NIL with a large-area stamp for high throughput, we propose a new UV-NIL tool that is able to imprint 4 inch wafer in a low vacuum environment at a single step.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.163-163
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• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.10
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• pp.1558-1565
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• 2004

It is important to determine supporting locations for structural stability when a structure is loaded with non-uniform load or supporting locations as well as the number of the supporting structures are restricted by the problem of space. Moreover, the supporting location optimization of complex structure in real world is frequently faced with discontinuous design space. Therefore, the traditional optimization methods based on derivative are not suitable Whereas, Genetic Algorithm (CA) based on stochastic search technique is a very robust and general method. The KSTAR in-vessel control coil installed in vacuum vessel is loaded with non- uniform electro-magnetic load and supporting locations are restricted by the problem of space. This paper shows the supporting location optimization for structural stability of the in-vessel control coil. Optimization has been performed by means of a developed program. It consists of a Finite Element Analysis interfaced with a Genetic Algorithm. In addition, this paper presents an algorithm to find an optimum solution in discontinuous space using continuous design variables.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.229-229
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• 2010

We report a high crystalline nonpolar a-plane (11-20) GaN on r-plane (1-102) sapphire substrates with $+0.15^{\circ}$, $-0.15^{\circ}$, $+0.2^{\circ}$, $-0.2^{\circ}$ and $+0.4^{\circ}$ misoriented by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 5 periods the nonpolar a-plane InGaN/GaN (a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN layers with double crystal x-ray diffraction. The FWHM values of $+0.4^{\circ}$ misoriented sapphire substrate were decreased down to 426 arc sec for $0^{\circ}$ and 531 arc sec for $-90^{\circ}$, respectively. Also, the samples were characterized by photoluminescence (PL).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.142.2-142.2
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• 2015

Plasma etch endpoint detection (EPD) of SiO2 and PR layer is demonstrated by plasma impedance monitoring in this work. Plasma etching process is the core process for making fine pattern devices in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a simple, non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist (PR), dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0 % oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD.

• Applied Microscopy
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• v.42 no.2
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• pp.111-114
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• 2012

The scanning electron microscopy is an ideal technique for examining plant surface at high resolution. Most hydrate samples, however, must be fix and dehydrate for observation in the scanning electron microscope. Because the microscopes operate under high vacuum, most specimens, especially biological samples, cannot withstand water removal by the vacuum system without morphological distortion. Cryo-techniques can observe in their original morphology and structure without various artifacts from conventional sample preparation. Rapid cooling is the method of choice for preparing plant samples for scanning electron microscopy in a defined physiological state. As one of cryo-technique, high-pressure freezing allows for fixation of native non-pretreated samples up to $200{\mu}M$ thick and 2 mm wide with minimal or no ice crystal damage for the freezing procedure. In this study, we could design to optimize structural preservation and imaging by comparing cryo-SEM and convention SEM preparation, and observe a fine, well preserved Arabidopsis stem's inner ultrastructure using HPF and cryo-SEM. These results would suggest a useful method of cryo-preparation and cryo-SEM for plant tissues, especially intratubule and vacuole rich structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.142.2-142.2
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• 2013

The effect of substrate on catalytic activity of CO oxidation with transition metal Platinum nanoparticles on doped and undoped TiO2 was investigated. Titanium dioxide was doped chemically with non-metal anions including nitrogen and fluorine. Undoped TiO2 was synthesized via simple conventional sol-gel route. Thin films of titania were developed by spin coating technique and the characterization techniques SEM, XRD, UV-Vis Absorption Spectroscopy and XPS were carried out to examine the morphology of films, crystal phase, crystallites, optical properties and elemental composition respectively. XPS analysis from doped TiO2 confirmed that the nitrogen site were interstitial whereas fluorine was doped into TiO2 lattice substitutionally. Catalytic activity systems of Pt/doped-TiO2 and Pt/undoped-TiO2 were fabricated to reveal the strong metal-support interaction effect during catalytic activity of CO oxidation reactions. By arc plasma deposition technique, platinum nanoparticles with mean size of 2.7 nm were deposited on the thin films of doped and undoped titanium dioxide. The CO oxidation was performed with 40 Torr CO and 100 Torr O2 with 620 Torr He carrier gas. Turn over frequency was observed two to three folds enhancement in case of Pt/doped TiO2 as compared to Pt/TiO2. The electronic excitation and the oxygen vacancies that were formed with the doping process were the plausible reasons for the enhancement of catalytic activity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.241-248
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• 2003

An electrochemical humidity sensor was fabricated with poly(1,5-diaminonaphthalene) film coated on a gap of two splitted gold electrodes, which were made by vacuum deposition. Response currents according to humidity were measured by the potential sweep method and chronoamperometry. The stability of the polymer film was improved by double step chronoamperometry using the applied voltage of ${\pm}0.5$ Vdc. The response time determined by the pulse technique was about ${\sim}50$ msec and the relative standard deviation of current response was within ${\pm}5.0%$. The response current of the film was intrinsically humidity dependent. The film exhibited a non-linear but reproducible response in ordinary range of relative humidity. The linear equations were $I(nA)=0.28{\times}%RH-1.01$ between 10 to 70 %RH and $I(nA)=6.05{\times}%RH-403.21$ between 70 to 90 %RH.