• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.151.2-151.2
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• 2016

We characterized the n-type organic field-effect transistors (OFETs) with non-conjugated polyelectrolytes (NPEs) interlayers as the electron injection layer. Novel NPEs with various ions (Cl-, Br-, I-) improved the electron mobility from $5.06{\times}10^{-3}$ to $2.10{\times}10^{-2}cm^2V^{-1}s^{-1}$ in OFETs based [6,6]-Phenyl-$C_{61}$-butyric acid methyl ester (PCBM) when $PEIEH^+I^-$ spin-cast from 0.6% solution was deposited onto the PCBM layer. Reduced electron injection barrier (${\phi}_e$) at NPE/metal electrode interface was induced by dipole formation and led to increase the electron injection and transport. These findings are important for understanding how NPEs function in devices, the improvement of device performance, and the design of new materials for use in optoelectronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.207-207
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• 2016

plasma group velocities of neon with oxygen admixture (ug) are obtained by intensified charge coupled device (ICCD) camera images at fixed gate width time of 5 ns. The propagation velocities outside interelectrode region are in the order of 104 m/s.The plasma ambipolar diffusion velocities are calculated to be in the order of 102 m/s. Plasma jet is generated by all fixed sinusoidal power supply, total gas flow and repetition frequency at 3 kV, 800 sccm and 40 kHz, respectively. The amount of oxygen admixture is varied from 0 to 2.75 %. By employing one dimensional convective wave packet model, the electron temperatures in non-thermal atmospheric-pressure plasma jet are estimated to be in a range from 1.65 to 1.95 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.156.1-156.1
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• 2015

Neon and argon plasma group velocities (ug) are obtained by intensified charge coupled device (ICCD) camera images at fixed gate width time of 5 ns. The propagation velocities in upstream and downstream region are in the order of 104-105 m/s. The plasma ambipolar diffusion velocities are calculated to be in the order of 101-102 m/s. Plasma jet is generated by sinusoidal power supply in varying voltages from 1 to 4 kV at repetition frequency of 40 kHz. By employing one dimensional convective wave packet model, the neon and argon electron temperatures in non-thermal atmospheric-pressure plasma jet are estimated to be 1.95 and 1.18 eV, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.378.1-378.1
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• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.363-363
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• 2010

The high capillarity of a plastic fiber network having superhydrophilic Si-DLC coating is studied. Although the superhydrophilic surface maximize wetting ability on the flat surface, there remains a requirement for the more wettable surface for various applications such as air-filters or liquid-filters. In this research, the PET non-woven fabric surface was realized by superhydrophilic coating. PTE non-woven fabric network was chosen due to its micro-pore structure, cheap price, and productivity. Superhydrophobic fiber network was prepared with a coating of oxgyen plasma treated Si-DLC films using plasma-enhanced chemical vapor deposition (PECVD). We first fabricated superhydrophilic fabric structure by using a polyethylene terephthalate (PET) non-woven fabric (NWF) coated with a nanostructured films of the Si-incorporated diamond-like carbon (Si-DLC) followed by the plasma dry etching with oxygen. The Si-DLC with oxygen plasma etching becomes a superhydrophilic and the Si-DLC coating have several advantages of easy coating procedure at room temperature, strong mechanical performance, and long-lasting property in superhydrophilicity. It was found that the superhydrophobic fiber network shows better wicking ability through micro-pores and enables water to have much faster spreading speed than merely superhydrophilic surface. Here, capillarity on superhydrophilic fabric structure is investigated from the spreading pattern of water flowing on the vertical surface in a gravitational field. As water flows on vertical flat solid surface always fall down in gravitational direction (i.e. gravity dominant flow), while water flows on vertical superhydrophilic fabric surface showed the capillary dominant spreading.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.438-438
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• 2010

The abnormal behavior of the argon metastable density during the E-H mode transition in argon ICP discharge was investigated. Lots of investigations including global models expected that during and after the mode transition of ICP discharge, the density of metastable increases with applied rf power (i.e. electron density). However, recent direct measurement of metastable density revealed that the metastable density of argon decreases with the applied power during and after the mode transition. This result may not be explained by the previous global model which is based on the assumption of the Maxwellian electron energy distribution function (EEDF). In this paper, to explain this abnormal behavior with simple manners, a simple global model taking account of the effect of the non-Maxwellian EEDFs incorporating into a set of coupled rate equations is proposed. The result showed that the calculated metastable density taking account of non-Maxwellian EEDF and its evolution during the transition has an abnormal behavior with electron density and is in good agreement with the previous measurement results, indicating the close coupling of electron kinetics and the behavior of metastable density. The proposed simple model is expected to provide qualitative kinetic insight to understand the behavior of the metastable density in various plasma discharges which typically exhibit non-Maxwellian distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.473-473
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• 2010

Plasma is widely used in various commercial etchers and chemical vapor deposition. Unfortunately, real-time plasma process monitoring is still difficult. Some methods of plasma diagnosis is improved, however, it is possible for real-time plasma diagnosis to use non-intrusive probe only. In this research, the object is to investigate the suitability of using impedance analysis and optical emission spectroscopy (OES) for real-time plasma process monitoring. It is assumed that plasma system is a equivalent circuit. Therefore, V-I probe is used for measuring impedance, which can be a new non-intrusive probe for plasma diagnosis. From impedance data, we tried to analyse physical properties of plasma. And OES, the other method of plasma diagnosis, is a typical non-intrusive probe for analyzing chemical properties. The amount of the OES data is typically large, so this poses a difficulty in extracting relevant information. To solve this problem, principal component analysis (PCA) can be used. For fundamental information, Ar plasma and $O_2$ plasma are used in this experiment. This method can be applied to real-time endpoint and fault detections.

• Current Photovoltaic Research
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• v.8 no.2
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• pp.45-49
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• 2020

Molybdenum (Mo) thin films are widely used as back contact in copper indium diselenide (CISe) solar cells. However, despite this, there are only few published studies on the properties of Mo and characteristics of CISe solar cells formed on such Mo substrates. In this studies, we investigated the properties of sputter deposited Mo bilayer, and fabricated non-vacuum CISe solar cells using bilayer Mo substrates. The changes in surface morphology and electrical resistivity were traced by varying the gas pressure during deposition of the bottom Mo layer. In porous surface structure, it was confirmed that the electrical resistivity of Mo bilayer was increased as the amount of oxygen bonded to the Mo atoms increased. The resulting solar cell characteristics vary as the bottom Mo layer deposition pressure, and the maximum solar cell efficiency was achieved when the bottom layer was deposited at 7 mTorr with a thickness of 100 nm and the top layer deposited at 3 mTorr with a thickness of 400 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.