• Current Photovoltaic Research
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• 제3권3호
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.93-93
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• 2003

Photoluminescence(PL) properties of Silicon nanocrystals (nc-Si) as a function of temperature is reported to consider the mechanism of PL. Nc-Si has been made by $Si^+$ ion-implantation into thermal $SiO_2$ and subsequent annealing. And after gold had been diffused at the same samples above, the resultant PL spectra has been compared to the PL spectra from the non-gold doped nc-Si. PL peak energy variation from nc-Si is same with the variation of energy bandgap of bulk silicon as temperature changes from 6 K to room temperature. This result may mean nc-Si is still indirect transition material like bulk silicon. Gold doped nc-Si reveals short peak wavelength of PL spectrum than gold undoped one. PL peak shift through gold doing process shows clearly the PL mechanism is not from defect or interface states. PL intensity increases from 6K to a certain temperature and then decrease to room temperature. This characteristic with temperature shows that phonon have a role for the luminescence as theory explains that electron and hole can be recombined radiatively by phonon's assist in nc-Si, which is almost impossible in bulk silicon. Therefore luminescence is observed in nc-Si constructed less than a few of unit cell and the peak energy of luminescence can be higher than the bulk bandgap energy by the bandgap widening effect occurs in nanostructure.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• 동굴
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• 제76호
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• pp.37-42
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• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• 한국유체기계학회 논문집
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• 제17권1호
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• pp.35-40
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• 2014

A multi-objective optimization of a regenerative fan for enhancing the aerodynamic and aeroacoustic performance was carried out using an integrated fan design system, namely, Total FAN-Regen$^{(R)}$. The Total FAN-Regen$^{(R)}$ was developed for non-specialists to carry out a series of design process, viz., computational preliminary design, three-dimensional aerodynamic and aeroacoustic analyses, and design optimization, for a regenerative fan. An aerodynamic analysis of the regenerative fan was conducted by solving three-dimensional Reynolds-averaged Navier-Stokes equations using the shear stress transport turbulence model. And, an aeroacoustic analysis of the regenerative fan was implemented in a finite/infinite element method by solving the variational formulation of Lighthill's analogy based on the results of the unsteady flow analysis. An optimum shape obtained by Total FAN-Regen$^{(R)}$ shows the enhanced efficiency and decreased sound pressure level as much as 1.5 % and 20.0 dB, respectively, compared to those of the reference design. The performance test was carried out for an optimized regenerative fan to validate the performance of the numerically predicted optimal design.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.149-154
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• 2005

궁극적으로 게이트를 저저항 복합 실리사이드로 대체하는 가능성을 확인하기 위해 70 nm 두께의 폴리실리콘 위에 각 20nm의 Ni, Co를 열증착기로 적층순서를 달리하여 poly/Ni/Co, poly/Co/Ni구조를 만들었다. 쾌속열처리기를 이용하여 실리사이드화 열처리를 40초간 $700{\~}1100^{\circ}C$ 범위에서 실시하였다. 복합 실리사이드의 온도별 전기저항변화, 두께변화, 표면조도변화를 각각 사점전기저항측정기와 광발산주사전자현미경, 주사탐침현미경으로 확인하였다. 적층순서와 관계없이 폴리실리콘으로부터 제조된 복합실리사이드는 $800^{\circ}C$ 이상부터 급격한 고저항을 보이고, 두께도 급격히 얇아졌다. 두께의 감소는 기존의 단결정에서는 없던 현상으로 폴리실리콘의 두께가 한정된 경우 금속성분의 inversion 현상이 커서 폴리실리콘이 오히려 실리사이드 상부에 위치하여 제거되기 때문이라고 생각되었고 $1000^{\circ}C$ 이상에서는 실리사이드가 형성되지 못하였다. 이러한 결과는 나노급 두께의 게이트를 저저항 실리사이드로 만 들기 위해서는 inversion과 두께감소를 고려하여야 함을 의미하였다.

• 한국세라믹학회지
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• 제43권10호
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• pp.666-672
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• 2006

GDC20($Ce_{0.8}Gd_{0.2}O_{1.9}$) powder was synthesized by oxalate co-precipitation and milling and its thermal decomposition, phase formation, and sinterability were investigated. As-prepared precipitates were non-crystalline due to the milling process and completely decomposed at 400$^{\circ}C$ The powder calcined at 800$^{\circ}C$ for 2 h contained fine p]sty particles with an average size of 0.69 $\mu$m. Attrition milling of the calcined powder for 2 h had a little milling effect, resulting in a slight decrease in the particle size to 0.45 $\mu$m. The milled powder consisted of small spherical primary particles and some large particles, which had been agglomerated during calcination. Due to the excellent sinterability of the powder, sintering of the powder compacts for 4 h showed relative densities of 78.7% at 1000$^{\circ}C$ and 97.8% at 1300$^{\circ}C$, respectively. Densification was found to almost complete at temperature above 1200$^{\circ}C$ and a dense and homogeneous microstructure was obtained. A rapid grain growth occurred between 1200$^{\circ}C$ and 1300$^{\circ}C$. Grains in 0.1$\sim$0.5 $\mu$m sizes at 1200$^{\circ}C$ grew to 0.2$\sim$2 $\mu$m and their size distribution became broader at 1300$^{\circ}C$.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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• pp.75-78
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• 2004

Various jet engines (Turbine engine family and RAM Jet engine) have been developed for high speed aircrafts. but their application to hypersonic flight is restricted by principle problems such as increase of total pressure loss and thermal stress. Therefore, the development of next generation propulsion system for hypersonic aircraft is a very important subject in the aerospace engineering field, SCRAM Jet engine based on a key technology, Supersonic Combustion. is supposed as the best choice for the hypersonic flight. Since Supersonic Combustion requires both rapid ignition and stable flame holding within supersonic air stream, much attention have to be given on the mixing state between air stream and fuel flow. However. the wider diffusion of fuel is expected with less total pressure loss in the supersonic air stream. So. in this study the direction of fuel injection is inclined 30 degree to downstream and the total pressure of jet is controlled for lower penetration height than thickness of boundary layer. Under these flow configuration both streams, fuel and supersonic air stream, would not mix enough. To spread fuel wider into supersonic air an aerodynamic force, baroclinic torque, is adopted. Baroclinic torque is generated by a spatial misalignment between pressure gradient (shock wave plane) and density gradient (mixing layer). A wedge is installed in downstream of injector orifice to induce an oblique shock. The schlieren optical visualization from side transparent wall and the total pressure measurement at exit cross section of combustor estimate how mixing is enhanced by the incidence of shock wave into supersonic boundary layer composed by fuel and air. In this study non-combustionable helium gas is injected with total pressure 0.66㎫ instead of flammable fuel to clarify mixing process. Mach number 1.8. total pressure O.5㎫, total temperature 288K are set up for supersonic air stream.

• 세라미스트
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• 제23권2호
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• pp.211-230
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• 2020

Perovskite-type oxides with the nominal composition of ABO₃ can exsolve the B-site transition metal upon the controlled reduction. In this exsolution process, the transition metal emerges from the oxide lattice and migrates to the surface at which it forms catalytically active nanoparticles. The exsolved nanoparticles can recover back to the bulk lattice under oxidation treatment. This unique regeneration character by the redox treatment provides uniformly dispersed noble metal nanoparticles. Therefore, the conventional problem of traditional impregnated metal/support, i.e., sintering during reaction, can be effectively avoided by using the exsolution phenomenon. In this regard, the catalysts using the exsolution strategy have been well studied for a wide range of applications in energy conversion and storage devices such as solid oxide fuel cells and electrolysis cells (SOFCs and SOECs) because of its high thermal and chemical stability. On the other hand, although this exsolution strategy can also be applied to gas phase reaction catalysts, it has seldomly been reviewed. Here, we thus review recent applications of the exsolution catalysts to the gas phase reactions from the aspects of experimental measurements, where various functions of the exsolved particles were utilized. We also review non-perovskite type metal oxides that might have exolution phenomenon to provide more possibilities to develop higher efficient catalysts.