• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.122-125
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• 2013

Perpendicular magnetic anisotropy (PMA) is the phenomenon of magnetic thin film which is preferentially magnetized in a direction perpendicular to the film's plane. Amorphous multilayer with PMA has been studied as the good candidate to realization of high density STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory). The current issue of high density STT-MRAM is a decrease in the switching current of the device and an application of amorphous materials which are most suitable devices. The amorphous ferromagnetic material has low saturated magnetization, low coercivity and high thermal stability. In this study, we presented amorphous ferromagnetic multilayer that consists of an amorphous alloy CoSiB and a nonmagnetic material Pd. We investigated the change of PMA of the $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ multilayer ($t_{CoSiB}$ = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 nm, and $t_{Pd}$ = 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6 nm) and $[CoSiB\;0.3nm/Pd\;1.3nm]_n$ multilayer (n = 3, 5, 7, 9, 11, 13). This multilayer is measured by VSM (Vibrating Sample Magnetometer) and analyzed magnetic properties like a coercivity ($H_c$) and a magnetization ($M_s$). The coercivity in the $[CoSiB\;t_{CoSiB}\;nm/Pd\;1.3nm]_5$ multi-layers increased with increasing $t_{CoSiB}$ to reach a maximum at $t_{CoSiB}$ = 0.3 nm and then decreased for $t_{CoSiB}$ > 0.3 nm. The lowest saturated magnetization of $0.26emu/cm^3$ was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_3$ multilayer whereas the highest coercivity of 0.26 kOe was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_5$ mutilayer. Additional Pd layers did not contribute to the perpendicular magnetic anisotropy. The single domain structure evolved in to a striped multi-domain structure as the bilayer repetition number n was increased above 7 after which (n > 7) the hysteresis loops had a bow-tie shapes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.158-158
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• 2003

수평 전기로에서 CuGaTe2 다결정을 합성하여 HWE 방법으로 CuGaTe2 단결정 박막을 반절연성 GaAs(100) 위에 성장하였다. CuGaTe2 단결정 박막은 증발원과 기판의 온도를 각각 67$0^{\circ}C$, 41$0^{\circ}C$로 성장하였다. 이때 단결정 박막의 결정성이 10K에서 측정한 광발광 스펙트럼은 954.5nm (1.2989eV) 근처에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 139arcsec로 가장 작게 측정되어 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Paw방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 8.72$\times$$10^{23}$개/㎥, 3.42$\times$$10^{-2}$$m^2$/V.s였다. 상온에서 CuGaTe2 단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 1.22 eV였다 Band edge에 해당하는 광전도도peak의 온도 의존성은 Varshni 관계식으로 설명되었으며, Varshni 관계식의 상수값은 Eg(0) = 1.3982 eV, $\alpha$= 4.27$\times$$10^{-4}$ eV/K, $\beta$= 265.5 K로 주어졌다. CuGaTe2 단결정 박막의 광전류 단파장대 봉우리들로부터 10K에서 측정된 $\Delta$cr (crystal Field splitting)은 0.0791eV, $\Delta$s.o (spin orbit coupling)는 0.2463eV였다. 10K에서 광발광 봉우리의 919.8nm (1.3479eV)는 free exciton(Ex), 954.5nm (1.2989eV)는 donor-bound exciton 인 I2(DO,X)와 959.5nm (1.2921eV)는 acceptor-bound exciton 인 I1(AO,X) 이고, 964.6nm(1.2853eV)는 donor-acceptor pair(DAP) 발광, 1341.9nm (0.9239eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.5 s.182
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• pp.44-50
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• 2006

This paper describs about the technique of ultra-precision machining for an infrared(IR) camera aspheric mirror. A 200 mm diameter aspheric mirror was fabricated by SPDTM(Single Point Diamond Turning Machine). Aluminum alloy as mirror substrates is known to be easily machined, but not polishable due to its ductility. Aspheric large reflector without a polishing process, the surface roughness of 5 nm Ra, and the form error of ${\lambda}/2\;({\lambda}=632.8\;nm)$ for reference curved surface 200 mm has been required. The purpose of this research is to find the optimum machining conditions for cutting reflector using Al6061-T651 and apply the SPDTM technique to the manufacturing of ultra precision optical components of Al-alloy aspheric reflector. The cutting force and the surface roughness are measured according to each cutting conditions feed rate, depth of cut and cutting speed, using diamond turning machine to perform cutting processing. As a result, the surface roughness is good when feed rate is 1mm/min, depth of cut $4{\mu}m$ and cutting speed is 220 m/min. We could machined the primary mirror for IR camera in diamond machine with a surface roughness within $0.483{\mu}m$ Rt on aspheric.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.44-48
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• 1997

The nanocrystalline Nd-Fe-B alloys with low Nd content were prepared by rapid solidification technique. The alloys consist of both$\alpha$-Fe as the main phase and $Nd_2Fe_{14}B_1$ as a secondary phase and have an ultrafine grain structure of about 30 nm. The addition of Ga in $Nd_4Fe_{82}B_{10}Mo_3Cu_1$ alloy increases remanence up to 1.29 T and improves squareness. The nanocrystalline $Nd_5Fe_{81}B_9Mo_3Cu_1Ga_1$ alloy has a volume fraction of $Nd_2Fe_{14}B_1$ phase of around 35% due to the increase of Nd content and shows an improved coercivity. The remanence, coercivity and energy product of optimally annealed nanocrystalline $Nd_5Fe_{81}B_9Mo_3Cu_1Ga_1$ alloy are 1.24 T, 257.4 kA/m (3.23 kOe), and 100.3 kJ/ ㎥ (12.6 MGOe), respectively.

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2324-2332
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• 2017

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current ($I_{on}$), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length ($L_G$) was scaled down. The proposed TFET with a $L_G$ of 5 nm operated with an $I_{on}$ of $1.3mA/{\mu}m$, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage ($V_{DS}$) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional $L_G$ of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

• Applied Chemistry for Engineering
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• v.23 no.6
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• pp.561-566
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• 2012

PtRuW/C catalysts were prepared with the different molar ratios of Pt : Ru : W and their compositions were analyzed by energy dispersive X-ray (EDX). The uniform distribution of particles was observed using transmission electron microscopy (TEM). An average crystalline size of 3.5~5.5 nm was calculated based on x-ray diffraction (XRD) data. The electrochemical properties such as electrochemically active surface areas, current densities, specific activities and poisoning rates, were analyzed via CO stripping, linear sweep voltammetry and chronoamperometry. From the analysis, we observed that ternary alloy catalysts, except $PtRu_2W_2/C$, have higher current densities, specific activities and stabilities than those of commercial binary catalysts. Among all in-house catalysts, Pt5Ru4W/C showed the highest specific activity of $121.05mA{\cdot}m^{-2}$ and the lowest poisoning rate of $0.01%{\cdot}s^{-1}$.

• Journal of Surface Science and Engineering
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• v.48 no.4
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• pp.174-178
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• 2015

We studied emission characteristics for blue fluorescent dual-side emission OLED with Al cathode thickness variation. In the bottom emission OLED of Al cathode with 10, 15, 20, 25, 30, and 150 nm thickness, maximum luminance showed 36.1, 8,130, 9,300, 12,000, 13,000, and $12,890cd/m^2$, and maximum current efficiency showed 2, 8.8, 10, 10.5, 10.8, and 11.4 cd/A, respectively. The emission characteristics of the bottom emission seemed to be improved according to decrease of resistance as the thickness of Al cathode increase. In the top emission OLED of Al cathode with 10, 15, 20, 25, and 30 nm thickness, maximum luminance showed 4.3, 351, 131, 88.6, and $33.2cd/m^2$, and maximum current efficiency showed 0.23, 0.38, 0.21, 0.16, and 0.09 cd/A, respectively. It yielded the highest maximum luminance and maximum current efficiency in Al cathode thickness 15 nm. It showed a tendency to decrease as the thickness of Al cathode increase. The reason for this is due to decrease of transmittance with increasing of Al cathode thickness. The electroluminescent spectra of bottom and top emission OLED were not change.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.16 no.4
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• pp.397-410
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• 2018

When considering the long-term safety assessment of spent-nuclear fuel management, americium is one of the most radio-toxic actinides. Although spectroscopic methods are widely used for the study of actinide chemistry, application of those methods to americium chemistry has been limited. Herein, we purified $^{241}Am$ to obtain a highly pure stock solution required for spectroscopic studies. Quantitative and qualitative analyses of purified $^{241}Am$ were carried out using liquid scintillation counting, and gamma and alpha radiation spectrometry. Highly sensitive absorption spectrometry coupled with a liquid waveguide capillary cell and time-resolved laser fluorescence spectroscopy were employed for the study of Am(III) hydrolysis and oxalate (Ox) complexation. $Am^{3+}$ ions under acidic conditions exhibit maximum absorbance at 503 nm, with a molar absorption coefficient of $424{\pm}8cm^{-1}{\cdot}M^{-1}$. $Am(OH)_3(s)$ colloidal particles formed under near neutral pH conditions were identified by monitoring the absorbance at around 506-507 nm. The formation of ${Am(Ox)_3}^{3-}$ was detected by red-shifts of the absorption and luminescence spectra of 4 and 5 nm, respectively. In addition, considerable enhancements of the luminescence intensities were observed. The luminescence lifetime of ${Am(Ox)_3}^{3-}$ increased from 23 to 56 ns, which indicates that approximately six water molecules are replaced by carboxylate ligands in the inner-sphere of the Am(III). These results suggest that ${Am(Ox)_3}^{3-}$ is formed through the bidentate coordination of the oxalate ligands.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.887-892
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• 2019

In this study, after 20nm-thick $SiO_2$ thin film was deposited by PECVD method on the PES substrate, which is known to have the highest heat resistance among plastic substrates, as a buffer layer, ITZO thin films were deposited by RF magnetron sputtering method to investigate the electrical and optical properties according to the working pressure. The ITZO thin film deposited at the working pressure of 3mTorr showed the best electrical properties with a resistivity of $8.02{\times}10^{-4}{\Omega}-cm$ and a sheet resistance of $50.13{\Omega}/sq.$. The average transmittance in the visible region (400-800nm) of all ITZO films was over 80% regardless of working pressure. The Figure of merit showed the largest value of $23.90{\times}10^{-4}{\Omega}^{-1}$ in the ITZO thin film deposited at 3mTorr. This study found that ITZO thin films are very promising materials to replace ITO thin films in next-generation flexible display devices.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.5
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• pp.109-114
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• 2023

In this paper, a 2-channel Image-Reject receiver using a 65-nm CMOS process is presented for Ka-band compact radars. The designed receiver consists of Low-Noise Amplifier (LNA), IQ mixer, and Analog Baseband (ABB). ABB includes a complex filter in order to suppress unwanted images, and the variable gain amplifiers (VGAs) in RF block and ABB have gain tuning range from 4.5-56 dB for wide dynamic range. The gain of the receiver is controlled by on-chip SPI controllers. The receiver has noise figure of <15 dB, OP1dB of >4 dBm, image rejection ratio of >30 dB, and channel isolation of >45 dB at the voltage gain of 36 dB, in the Ka-band target frequency. The receiver consumes 420 mA at 1.2 V supply with die area of 4000×1600 ㎛.