• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.796-799
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• 2006

We studied the nematic liquid crystal (NLC) alignment capability by the Ion beam (IB) alignment method on a NDLC (Nitrogen doped Diamond Like Carbon) as a C:H thin film, and investigated electro-optical (EO) performances of the IB aligned In plane switching (IPS) cell with NDLC surface. A good LC alignment by IB exposure on a NDLC surface was achieved. Monodomain alignment of the IB aligned IPS cell can be observed. The good electro-optical characteristics of the IB aligned IPS cell was observed with oblique IB exposure on the NDLC as a-C:H thin film for 1min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.391-391
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• 2010

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.280-286
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• 2010

We have investigated the influence of rapid thermal annealing (RTA) temperature on properties of Al-doped zinc oxide (AZO) thin films deposited on glass substrate by using radio-frequency magnetron sputtering. The RTA is performed in a nitrogen ambient in the temperature range from 300 to $600^{\circ}C$ for 1 minute in a rapid thermal annealer after growing the AZO thin films. The crystallographic structure and the surface morphology of AZO thin film are measured by using X-ray diffraction, and atomic force microscopy and scanning electron microscopy, respectively. The optical transmittance of the deposited thin films is examined in the wavelength range of 300-1100 nm, where the average transmittance is above the 90% in the visible and near-infrared regions. The optical bandgap is calculated from the Tauc's model, and it shows a significant dependence on the RTA temperature. As for the electrical properties of the thin films, the AZO thin film annealed at $400^{\circ}C$ shows the lowest electrical resistivity of $8.6{\times}10^{-3}{\Omega}cm$ and the Hall mobility of $11.3cm^2$/V-sec. These results suggest that the RTA temperature is an important parameter to influence on the structural, electrical, and optical properties of AZO thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.301-301
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• 2008

Ion beam (IB)-induced alignment of inorganic materials has been investigated intensively as it provides controllability in a nonstop process for producing high-resolution displays[1][2]. LC orientation via ion-beam (IB) irradiation on the nitrogen doped diamond like carbon (NDLC) thin film deposited by physical deposition method-sputtering was embodied. The NDLC thin film that was deposited by sputter showed uniform LC alignment at the 1200eV of the ion beam intensity. The pretilt angle of LC on NDLC thin films was measured with various IB exposure time and angle. The maximum pretilt angle were showed with IB irradiation angle of $45^{\circ}$ and exposure time of 62.5 sec, respectively. To show NDLC thin film stability in high temperature, thermal stability test was proceeded. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$. In this investigation, the electro-optical (EO) characteristics of LC on NDLC thin film were measured.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.86-86
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• 2017

고효율의 에너지 변환 및 친환경적인 이점들을 이유로, 고분자전해질 연료전지(PEMFC)는 차세대 에너지 장치로 이목을 끌어왔다. 반면, 값비싼 백금 촉매의 이용은 연료전지의 상업적 이용에 주요한 결점으로 작용했다. 최근, Zelenay와 연구팀은 폴리아닐린-철-탄소 복합체구조에서 산소환원활성이 백금과 견주어 비슷한 성능을 낼 수 있음을 보고 하였다. Dodelet은 이러한 높은 성능이 전이금속의 영향에 의한 것일 수 있다는 주장을 하였다. 본 연구팀은 지난 연구에서 제일원리전산모사를 통해 니켈, 코발트, 구리등과 같은 전이금속이 질소가 도핑된 탄소 그래핀층에 미치는 거동을 밝혔다. 결론적으로, 금속들은 질소가 도핑된 그래핀의 전자구조를 바꿀 수 있고, 이러한 전자구조의 변화는 산소 환원반응에서 긍정적으로 작용할 수 있음을 확인하였다. 이러한 이론적 연구에 기반하여, 탄소층으로 감싼 금속은 내구성과 활성을 동시에 보유한 향후 전망있는 촉매 물질로 예상되어진다. 특히, 질소가 도핑된 탄소층으로 코팅된 철-코발트 합금은 계산을 통해 산소환원반응에서 우수할 것으로 예측되었다. 본 연구팀은 FeCo@N-C 나노입자를 직접 합성하였고, 이 촉매의 우수한 활성을 전기화학적, 구조적 관점에서 1) 질소의 도핑 효과, 2) 탄소의 두께 효과, 3) 합금효과에 집중하여 분석하였다.

• 센서학회지
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• 제18권2호
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• pp.147-153
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• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.701-705
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• 2007

The incorporation of N in a-C film is able to improve the friction coefficient and the adhesion to various substrates. In this study, a-C:N films were deposited on Si and steel substrates by closed-field unbalanced magnetron (CFUBM) sputtering system in $Ar/N_2$ plasma. The lubricant characteristics was investigated for a-C:N deposited with total working pressure from 4 to 7 mTorr. We obtained high hardness up to 24GPa, friction coefficient lower than 0.1 and the smooth surface of having the extremely low roughness (0.16 nm). The physcial properties of a-C:N thin film are related to the increase of cross-linked $sp^2$ bonding clusters in the film. However, the decrease of hardness, elastic modulus and the increase of surface roughness, friction coefficient with the increase of $N_2$ partial pressrue might be due to the effect of energetic ions as a result of the increase of ion bombardment with the increase of ion density in the plasma.

• Journal of information and communication convergence engineering
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• 제11권4호
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• pp.288-292
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• 2013

In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage ($V_{th}$) adjustment using a carbon implant significantly improves the $V_{th}$ mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-${\mu}m$ $V_{th}$ node technology. This paper investigates a carbon implant process as a promising candidate for the optimal $V_{th}$ roll-off curve. The carbon implant makes the $V_{th}$ roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

• 공업화학
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• 제20권4호
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• pp.402-406
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• 2009

상압플라즈마 공정을 이용하여 $TiO_2$ 박막의 표면을 개질하고 광촉매 활성을 평가하였다. $TiO_2$ 박막은 $TiO_2$ 졸-겔 용액에서 유리판에 dip-coating법으로 코팅한 후 소성 온도와 소성 시간을 변화시켜 가면서 제조하였다. 표면 개질에 사용된 플라즈마는 질소 플라즈마였으며, 방전전력, 처리시간 등의 공정변수를 변화시키면서 실험을 수행하였다. 광촉매 활성은 UV-A와 형광등 하에서의 메틸렌 블루 분해효율을 바탕으로 평가하였다. XPS 분석 결과, 박막의 표면에 소량의 질소가 도핑되었음을 알 수 있었으며, 광촉매 효율은 UV-A와 형광등 하에서 모두 증가하였고, 특히 형광등 하에서 좀 더 증가하였다.