• 한국정보통신학회논문지
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• 제13권11호
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• pp.2385-2390
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• 2009

본 연구에서는 C-축 우선 배향 특성을 가지는 N-doped ZnO 박막을 증착하고 그 미세구조의 특성을 분석 비교하였다. ZnO박막은 $N_2O$ 가스 분위기에서 RF reactive magnetron sputtering 시스템을 사용하여 p-Si(100) 웨이퍼 위에 증착되었다. $N_2O$ 가스는 N doping source로 사용되었으며, 전체 가스 유량에 대한 $N_2O$ 가스의 비율 $N_2O/(N_2O+Ar)$과 증착 전력을 증착의 주요 공정 변수로 선택하여 다양한 가스 비율과 증착 전력에 대한 박막의 미세 구조 특성을 비교 분석하였다. 특히, Auger electron spectroscopy (AES)를 이용하여 ZnO 박막 내에 들어가 존재하는 불순물 N의 수직분포를 분석하였고, 여러 가지 증착 조건에서 제작된 ZnO 박막의 표면형상 및 미세구조 특성을 Scanning Electron Microscope (SEM)를 이용하여 분석하였다.

• 한국재료학회지
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• 제24권10호
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• pp.556-564
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• 2014

To synthesize a high-performance photocatalyst, N doped $TiO_2$ nanotubes deposited with Ag nanoparticles were synthesized, and surface characteristics, electrochemical behaviors, and photocatalytic activity were investigated. The $TiO_2$ nanotubular photocatalyst was fabricated by anodization; the Ag nanoparticles on the $TiO_2$ nanotubes were synthesized by a reduction reaction in $AgNO_3$ solution under UV irradiation. The XPS results of the N doped $TiO_2$ nanotubes showed that the incorporated nitrogen ions were located in interstitial sites of the $TiO_2$ crystal structure. The N doped titania nanotubes exhibited a high dye degradation rate, which is effectively attributable to the increase of visible light absorption due to interstitial nitrogen ions in the crystalline $TiO_2$ structure. Moreover, the precipitated Ag particles on the titania nanotubes led to a decrease in the rate of electron-hole recombination; the photocurrent of this electrode was higher than that of the pure titania electrode. From electrochemical and dye degradation results, the photocurrent and photocatalytic efficiency were found to have been significantly affected by N doping and the deposition of Ag particles.

• 한국결정성장학회지
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• 제9권1호
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• pp.39-42
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• 1999

N-도핑된 3C-SiC (N-SiC(3C))을 화학기상증착(CVD)으로 $1250^{\circ}C$에서 Si(111) 기판 위에 tetramethylsilane(TMS)를 열분해하여 성장하였다. 수송가스는 $H_{2}$이었고, N-SiC(3C) 에피층은 CVD로 성장되는 동안 $NH_{3}$에 의하여 n-형으로 도핑되었다. N-SiC(3C)의 물리적 특성은 적외선 분광(FTIR), X-선 회절(XRD), 라만 스펙트럼(Raman spectrum), 단면 투과전자영상(XTEM), Hall 측정 및 p/n 다이오드의 전압-진압(I-V) 특성에 의하여 조사되었다. N-도핑된 SiC(3C) 에피층의 전도형은 n-형이었고, 전도형은 $NH_{3}$를 사용한 N-dopant에 의하여 저온에서 잘 조절될 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.421-422
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• 2013

Recently, ZnO has received attentionbecause of its applications in optoelectronics and spintronics. In order to investigate deep level defects in ZnO, we used N-doped ZnO with various of the N-doping concentration. which are reference samples (undoped ZnO), 27%, 49%, and 88%-doped ZnO. Photoinduced current transient spectroscopy (PICTS) measurement was carried out to find deep level traps in high resistive ZnO:N. In reference ZnO sample, a deep trap was found to located at 0.31 (as denoted as the CO trap) eV below conduction band edge. And the CN1 and CN2 traps were located at 0.09, at 0.17 eV below conduction band edge, respectively. In the case of both annealed samples at 200 and $300^{\circ}C$, the defect density of the CO trap increases and then decreases with an increase of N-doping concentration. On the other hands, the density of CN traps has little change according to an increase of N-doping concentration in the annealed sample at $300^{\circ}C$. According to the result of PICTS measurement for different N-doping concentration, we suggest that the CO trap could be controled by N-doping and the CN traps be stabilized by thermal annealing at $300^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.130.1-130.1
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• 2013

We made attempts to improve photocatalytic activity of $TiO_2$ nanoparticles under visible light exposure by combining two additional treatments. N-doping of $TiO_2$ by ammonia gas treatment at $600^{\circ}C$ increased absorbance of visible light. By coating thin film of polydimethylsiloxane (PDMS), and subsequent vacuum-annealing at $800^{\circ}C$, $TiO_2$, became more hydrophilic, thereby enhancing photocatalytic activity of $TiO_2$. Four types of $TiO_2$ samples were prepared, bare-$TiO_2$, hydrophilic-modified $TiO_2$ ($h-PDMS/TiO_2$), N-doped $TiO_2$ ($N/TiO_2$) and hydrophilic-modified and N-doped $TiO_2$ ($h-PDMS/N/TiO_2$). Adsorption capability was evaluated under dark condition and photocatalytic activity of $TiO_2$ was evaluated by photodegradation of MB under blue LED (400 nm< ${\lambda}$) irradiation. N-doping on $TiO_2$ was characterized using XPS and hydrophilic modification of $TiO_2$ surface was analyzed by FT-IR spectrometer. It was found that N-doping and hydrophilic modification both had positive effect on enhancing adsorption capability and photocatalytic activity of $TiO_2$ at the same time. Particularly, N-doping enhanced visible light absorption of $TiO_2$, whereas hydrophilic surface modification increased MB adsorption capacity. By combining these two strategies, photocatalytic acitivity under visible light irradiation became the sum of individual effects of N-doping and hydrophilic modification.

• Carbon letters
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• 제17권1호
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• pp.29-32
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• 2016

This paper addresses the effect of dopants on the electronic properties of zigzag (8, 0) semiconducting single walled carbon nanotubes (SWCNTs), using extended Hückel theory combined with nonequilibrium Green’s function formalism. Through appropriate dopant concentrations, the electronic properties of SWCNTs can be modified. Within this context, we present our ongoing investigation on (8, 0) SWCNTs doped with nitrogen. Quantum confinement effects on the electronic properties of the SWCNTs have also been investigated. The obtained results reveal that the electronic properties of SWCNTs are strongly dependent on the dopant concentration and modification of electronic structures by hydrogen confinement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1249-1251
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• 1998

We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.273-275
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• 1997

We fabricated the conventional silicon tips coated with a diamond-like carbon (DLC) film. The DLC films are prepared by the filtered cathodic vacuum arc (FCVA) technique. With increasing nitrogen content in DLC film, the work function($\phi$) and the turn-on voltage decrease and the emission current increases. This phenomenon is due to the fact that the Fermi-level moves to the conduction band by increasing nitrogen doping concentration. We have tested on the stability of the DLC film coated silicon tip during 2 hours at 500V.

• 한국재료학회지
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• 제26권1호
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• pp.42-46
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• 2016

The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.133-134
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• 2000

Effect of nitrogen doping on field emission characteristics of patterned Diamond-like Carbon (DLC) films was studied. The patterned DLC films were fabricated by the method reported previously[1]. Nitrogen doping in DLC film was carried out by introducing $N_2$ gas into the vacuum chamber during deposition. Higher emission current density of $0.3{\sim}0.4$ $mA/cm^2$ was observed for the films with 6 at % N than the undoped films but the emission current density decreased with further increase of N contents. Some changes in CN bonding characteristics with increasing N contents were observed. The CN bonding characteristics which seem to affect the electron emission properties of these films were studied by Raman spectroscopy, x-ray photoemission spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). The electrical resistivity and the optical band gap measurements showed consistence with the above analyses.